公开(公告)号：US20110042677A1

公开(公告)日：2011-02-24

申请号：US12863202

申请日：2009-11-13

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括由栅电极，源电极和漏电极组成的金属层; 由金属制成的金属氧化物膜，其构成金属层并形成在金属层的表面区域上; 以及通过金属氧化物膜形成在栅极电极上方的半导体层。 在柔性半导体器件中，在金属层的表面区域局部形成未被金属氧化物膜覆盖的未覆盖部分， 并且还通过未覆盖部分在源电极和半导体层之间以及在漏电极和半导体层之间形成电连接。

公开(公告)号：US08975626B2

公开(公告)日：2015-03-10

申请号：US12863202

申请日：2009-11-13

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

IPC分类号： H01L33/08 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66742 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括由栅电极，源电极和漏电极组成的金属层; 由金属制成的金属氧化物膜，其构成金属层并形成在金属层的表面区域上; 以及通过金属氧化物膜形成在栅极电极上方的半导体层。 在柔性半导体器件中，在金属层的表面区域局部形成未被金属氧化物膜覆盖的未覆盖部分， 并且还通过未覆盖部分在源电极和半导体层之间以及在漏电极和半导体层之间形成电连接。

公开(公告)号：US08581247B2

公开(公告)日：2013-11-12

申请号：US13256457

申请日：2010-02-02

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/02

CPC分类号： H01L29/66742 ,  H01L27/1218 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/0512

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括支撑层，形成在支撑层上的半导体结构部分和形成在半导体结构部分上的树脂膜。 树脂膜包括通过激光照射形成的开口，并且与树脂膜的开口部内的导电构件与半导体结构部的表面接触。

公开(公告)号：US20120001173A1

公开(公告)日：2012-01-05

申请号：US13256457

申请日：2010-02-02

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L27/1218 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/0512

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括支撑层，形成在支撑层上的半导体结构部分和形成在半导体结构部分上的树脂膜。 树脂膜包括通过激光照射形成的开口，并且与树脂膜的开口部内的导电构件与半导体结构部的表面接触。

公开(公告)号：US08343822B2

公开(公告)日：2013-01-01

申请号：US12681445

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

摘要： A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

摘要翻译： 一种制造柔性半导体器件的方法包括：（i）在金属箔的上表面上形成绝缘膜，（ii）在金属箔的上表面上形成引出电极图案，（iii）在金属箔的上表面上形成半导体层 绝缘膜，使得半导体层与引出电极图案接触，（iv）在金属箔的上表面上形成密封树脂层，使得密封树脂层覆盖半导体层和引出电极图案，和（ v）通过蚀刻金属箔形成电极，金属箔用作绝缘膜的支撑体，引出电极图案，半导体层和形成在（i）至（iv）中的密封树脂层，并用作 （v）中的电极的构成材料。 金属箔不需要剥离，可以使用高温工艺。

公开(公告)号：US20100283054A1

公开(公告)日：2010-11-11

申请号：US12681445

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

摘要： There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.

摘要翻译： 提供了一种制造柔性半导体器件的方法，其特征在于包括：（i）在金属箔的上表面上形成绝缘膜的步骤，（ii）在金属的上表面上形成引出电极图案的步骤 箔，（iii）以半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤，（iv）在所述绝缘膜的上表面上形成密封树脂层的步骤 金属箔以密封树脂层覆盖半导体层和引出电极图案，以及（v）通过蚀刻金属箔形成电极的步骤，其中金属箔用作绝缘膜的支撑体， （i）〜（iv）中形成的并用作（v）中的电极的构成材料的引出电极图案，半导体层和密封树脂层。 由于作为支撑体的金属箔不需要最终被剥离，所以可以通过简单的工艺制造TFT元件。 此外，由于使用金属箔作为支撑体，因此可以将绝缘膜和半导体层的制造引入高温处理，从而提高TFT特性。

公开(公告)号：US20120286264A1

公开(公告)日：2012-11-15

申请号：US13519668

申请日：2011-04-22

申请人： Takeshi Suzuki ,  Seiichi Nakatani ,  Koichi Hirano

发明人： Takeshi Suzuki ,  Seiichi Nakatani ,  Koichi Hirano

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78603 ,  G02F1/133305 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2251/5338 ,  H05B33/10

摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的方法包括以下步骤：（a）制备具有凹部的金属箔; （b）在金属箔的凹部的底面上形成栅极绝缘膜; （c）通过所述栅极绝缘膜在所述凹部的底面上形成半导体层，同时利用所述凹部作为堤部件; 和（d）形成源电极和漏电极，使其与半导体层接触。

公开(公告)号：US08847229B2

公开(公告)日：2014-09-30

申请号：US13820859

申请日：2012-02-21

申请人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

发明人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

IPC分类号： H01L29/04 ,  H01L21/027 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L33/08 ,  H01L23/544

CPC分类号： H01L29/786 ,  H01L21/0274 ,  H01L23/544 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78693 ,  H01L33/08 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的柔性半导体器件的制造方法包括以下步骤：形成栅电极; 形成栅极绝缘膜，使得栅极绝缘膜与栅电极接触; 在所述栅极绝缘膜上形成半导体层，使得所述半导体层与所述栅电极相对; 形成源极和漏极，使得源极和漏极与半导体层接触; 形成柔性膜层，使得柔性膜层覆盖半导体层和源极和漏极; 在柔性膜层中形成通孔; 通过将金属箔设置在柔性膜层上形成第一金属层，从而提供半导体器件前体; 以及对所述第一金属层进行处理处理以从所述第一金属层的一部分形成布线，其中，在所述第一金属层的所述加工处理的步骤中，通过至少使用所述布线形成所述布线在预定位置 其中一个通孔作为对准标记。

公开(公告)号：US20120280229A1

公开(公告)日：2012-11-08

申请号：US13520003

申请日：2011-04-22

申请人： Takeshi Suzuki ,  Koichi Hirano

发明人： Takeshi Suzuki ,  Koichi Hirano

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L27/15 ,  H01L29/22 ,  H01L29/16

CPC分类号： H01L29/78603 ,  H01L27/0688 ,  H01L27/1218 ,  H01L27/1251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3246 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0023 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0545 ,  H01L2251/5338

摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的方法包括以下步骤：（A）提供金属箔; （B）在所述金属箔上形成绝缘层，所述绝缘层具有用作栅极绝缘膜的部分; （C）在所述绝缘层上形成支撑基板; （D）蚀刻一部分金属箔从而形成源电极和漏电极; （E）通过利用源电极和漏电极作为堤构件在位于源极和漏电极之间的间隙部分中形成半导体层; 和（F）在绝缘层上形成树脂膜层，使得树脂膜层覆盖半导体层，源电极和漏电极。 在步骤（F）中，树脂膜层的一部分与位于源极和漏极之间的间隙部分相互配合。

公开(公告)号：US20130168681A1

公开(公告)日：2013-07-04

申请号：US13821352

申请日：2012-02-21

申请人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

发明人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

IPC分类号： H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/0274 ,  H01L23/544 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2227/323 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 根据本发明的柔性半导体器件的方法包括以下步骤：（i）在金属箔的主表面之一上形成绝缘层; （ii）在所述绝缘层上形成半导体层，然后形成源电极和漏电极，使得所述源极和漏极与所述半导体层接触; （iii）形成柔性膜层，使得柔性膜层覆盖半导体层和源极和漏极; （iv）在柔性膜层中形成通孔，从而提供半导体器件前体; 和（v）对所述金属箔进行处理处理，从而从所述金属箔形成栅电极，其中在所述金属箔的所述加工处理的步骤（v）中，所述栅电极形成在预定位置 通过使用半导体器件前体的至少一个通孔作为对准标记。