公开(公告)号：US20110042677A1

公开(公告)日：2011-02-24

申请号：US12863202

申请日：2009-11-13

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括由栅电极，源电极和漏电极组成的金属层; 由金属制成的金属氧化物膜，其构成金属层并形成在金属层的表面区域上; 以及通过金属氧化物膜形成在栅极电极上方的半导体层。 在柔性半导体器件中，在金属层的表面区域局部形成未被金属氧化物膜覆盖的未覆盖部分， 并且还通过未覆盖部分在源电极和半导体层之间以及在漏电极和半导体层之间形成电连接。

公开(公告)号：US08975626B2

公开(公告)日：2015-03-10

申请号：US12863202

申请日：2009-11-13

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

IPC分类号： H01L33/08 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66742 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括由栅电极，源电极和漏电极组成的金属层; 由金属制成的金属氧化物膜，其构成金属层并形成在金属层的表面区域上; 以及通过金属氧化物膜形成在栅极电极上方的半导体层。 在柔性半导体器件中，在金属层的表面区域局部形成未被金属氧化物膜覆盖的未覆盖部分， 并且还通过未覆盖部分在源电极和半导体层之间以及在漏电极和半导体层之间形成电连接。

公开(公告)号：US08581247B2

公开(公告)日：2013-11-12

申请号：US13256457

申请日：2010-02-02

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/02

CPC分类号： H01L29/66742 ,  H01L27/1218 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/0512

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括支撑层，形成在支撑层上的半导体结构部分和形成在半导体结构部分上的树脂膜。 树脂膜包括通过激光照射形成的开口，并且与树脂膜的开口部内的导电构件与半导体结构部的表面接触。

公开(公告)号：US20120001173A1

公开(公告)日：2012-01-05

申请号：US13256457

申请日：2010-02-02

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Seiichi Nakatani ,  Koichi Hirano ,  Tatsuo Ogawa

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L27/1218 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/0512

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括支撑层，形成在支撑层上的半导体结构部分和形成在半导体结构部分上的树脂膜。 树脂膜包括通过激光照射形成的开口，并且与树脂膜的开口部内的导电构件与半导体结构部的表面接触。

公开(公告)号：US20120286264A1

公开(公告)日：2012-11-15

申请号：US13519668

申请日：2011-04-22

申请人： Takeshi Suzuki ,  Seiichi Nakatani ,  Koichi Hirano

发明人： Takeshi Suzuki ,  Seiichi Nakatani ,  Koichi Hirano

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78603 ,  G02F1/133305 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2251/5338 ,  H05B33/10

摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的方法包括以下步骤：（a）制备具有凹部的金属箔; （b）在金属箔的凹部的底面上形成栅极绝缘膜; （c）通过所述栅极绝缘膜在所述凹部的底面上形成半导体层，同时利用所述凹部作为堤部件; 和（d）形成源电极和漏电极，使其与半导体层接触。

公开(公告)号：US08343822B2

公开(公告)日：2013-01-01

申请号：US12681445

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

摘要： A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

摘要翻译： 一种制造柔性半导体器件的方法包括：（i）在金属箔的上表面上形成绝缘膜，（ii）在金属箔的上表面上形成引出电极图案，（iii）在金属箔的上表面上形成半导体层 绝缘膜，使得半导体层与引出电极图案接触，（iv）在金属箔的上表面上形成密封树脂层，使得密封树脂层覆盖半导体层和引出电极图案，和（ v）通过蚀刻金属箔形成电极，金属箔用作绝缘膜的支撑体，引出电极图案，半导体层和形成在（i）至（iv）中的密封树脂层，并用作 （v）中的电极的构成材料。 金属箔不需要剥离，可以使用高温工艺。

公开(公告)号：US20100283054A1

公开(公告)日：2010-11-11

申请号：US12681445

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

摘要： There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.

摘要翻译： 提供了一种制造柔性半导体器件的方法，其特征在于包括：（i）在金属箔的上表面上形成绝缘膜的步骤，（ii）在金属的上表面上形成引出电极图案的步骤 箔，（iii）以半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤，（iv）在所述绝缘膜的上表面上形成密封树脂层的步骤 金属箔以密封树脂层覆盖半导体层和引出电极图案，以及（v）通过蚀刻金属箔形成电极的步骤，其中金属箔用作绝缘膜的支撑体， （i）〜（iv）中形成的并用作（v）中的电极的构成材料的引出电极图案，半导体层和密封树脂层。 由于作为支撑体的金属箔不需要最终被剥离，所以可以通过简单的工艺制造TFT元件。 此外，由于使用金属箔作为支撑体，因此可以将绝缘膜和半导体层的制造引入高温处理，从而提高TFT特性。

公开(公告)号：US08617943B2

公开(公告)日：2013-12-31

申请号：US12746440

申请日：2009-07-22

申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

IPC分类号： H01L21/00

CPC分类号： H01L29/78603 ,  H01L24/19 ,  H01L24/82 ,  H01L27/1218 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2224/92144 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.

摘要翻译： 一种制造柔性半导体器件的方法包括：制备包括依次形成的第一金属层10，无机绝缘层20，半导体层30和第二金属层40的层状膜80; 蚀刻第一金属层10以形成栅电极12g; 将树脂层50压接到设置有栅电极12g的层叠膜80的表面，以使栅电极12g嵌入树脂层50中; 并且蚀刻第二金属层40以形成源电极42s和漏电极42d，其中栅电极12g上的无机绝缘层20用作栅极绝缘膜22，并且源电极42s和漏极之间的半导体层30 无机绝缘层20上的电极42d用作通道32。

公开(公告)号：US08525178B2

公开(公告)日：2013-09-03

申请号：US13498700

申请日：2011-04-14

申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2251/5338

摘要： A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

摘要翻译： 柔性半导体器件包括其上形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括形成在绝缘膜的顶表面上的半导体层，形成在绝缘膜的顶表面上以与半导体层接触的源电极和漏电极，以及形成在底表面上的栅电极 的绝缘膜与半导体层相对。 作为与源极电极，漏极电极，顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度，其是第二厚度，其是绝缘膜的厚度 栅电极和半导体层。

公开(公告)号：US20100261321A1

公开(公告)日：2010-10-14

申请号：US12681399

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

IPC分类号： H01L21/336

CPC分类号： H01L51/0541 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0097 ,  H01L51/107 ,  Y02E10/549 ,  Y02P70/521

摘要： There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 （i）在树脂膜的上表面形成绝缘膜的工序，（ii）在树脂膜的上表面形成引出电极的图案的工序，（iii） 以使得半导体层与引出电极的图案接触的方式在绝缘膜上形成半导体层的步骤，以及（iv）在树脂膜的上表面上形成密封树脂层的步骤 密封树脂层覆盖半导体层和提取电极的图案的方式，其中上述（i）至（iv）中的至少一个形成步骤通过印刷方法进行。 在制造方法中，可以通过简单的印刷工艺形成各种层，而不使用真空工艺，光刻等。