公开(公告)号：USD459330S1

公开(公告)日：2002-06-25

申请号：US29147622

申请日：2001-09-04

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Satoshi Sugawara

Designer： Takeshi Suzuki ,  Michio Nagai ,  Satoshi Sugawara

公开(公告)号：USD467954S1

公开(公告)日：2002-12-31

申请号：US29148754

申请日：2001-09-27

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

Designer： Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

公开(公告)号：USD460058S1

公开(公告)日：2002-07-09

申请号：US29148751

申请日：2001-09-27

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Toshiki Takeda

Designer： Takeshi Suzuki ,  Michio Nagai ,  Toshiki Takeda

公开(公告)号：USD458913S1

公开(公告)日：2002-06-18

申请号：US29148752

申请日：2001-09-27

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

Designer： Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

公开(公告)号：USD466112S1

公开(公告)日：2002-11-26

申请号：US29148753

申请日：2001-09-27

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

Designer： Takeshi Suzuki ,  Michio Nagai ,  Hirohisa Miyazaki

公开(公告)号：USD459329S1

公开(公告)日：2002-06-25

申请号：US29147621

申请日：2001-09-04

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Jin Kuramoto

Designer： Takeshi Suzuki ,  Michio Nagai ,  Jin Kuramoto

公开(公告)号：USD458240S1

公开(公告)日：2002-06-04

申请号：US29148043

申请日：2001-09-14

Applicant: Takeshi Suzuki ,  Michio Nagai ,  Iwao Ohuchi

Designer： Takeshi Suzuki ,  Michio Nagai ,  Iwao Ohuchi

公开(公告)号：US09856582B2

公开(公告)日：2018-01-02

申请号：US13428395

申请日：2012-03-23

Applicant: Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

Inventor： Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

IPC: C30B17/00 ,  C30B29/36 ,  C30B9/10

CPC classification number: C30B29/36 ,  C30B9/10 ,  C30B17/00

Abstract: A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.

公开(公告)号：US09637826B2

公开(公告)日：2017-05-02

申请号：US13823409

申请日：2011-09-14

Applicant: Takeshi Suzuki ,  Norihiko Nakamura ,  Yuka Miyamoto ,  Yoichi Tobiyama

Inventor： Takeshi Suzuki ,  Norihiko Nakamura ,  Yuka Miyamoto ,  Yoichi Tobiyama

IPC: C23C22/05 ,  C23C28/00 ,  C25D11/00 ,  C23C22/34 ,  C23C22/00 ,  C23C30/00 ,  B32B1/08 ,  B32B15/09 ,  B32B15/18 ,  C25D5/12 ,  C25D5/50 ,  C23C22/36 ,  C23C22/83 ,  C25D9/08 ,  C25D11/36

CPC classification number: C23C28/00 ,  B32B1/08 ,  B32B15/09 ,  B32B15/18 ,  B32B2250/03 ,  B32B2250/40 ,  B32B2255/06 ,  B32B2255/205 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2439/66 ,  C23C22/00 ,  C23C22/05 ,  C23C22/34 ,  C23C22/36 ,  C23C22/83 ,  C23C28/32 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/3455 ,  C23C30/00 ,  C23C30/005 ,  C25D5/12 ,  C25D5/505 ,  C25D9/08 ,  C25D11/00 ,  C25D11/36 ,  Y10T428/12535 ,  Y10T428/12556 ,  Y10T428/12569 ,  Y10T428/12597 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/12708 ,  Y10T428/12722 ,  Y10T428/12944 ,  Y10T428/12958 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265 ,  Y10T428/27 ,  Y10T428/31678

Abstract: A steel sheet for containers that has excellent film adhesion qualities, and has; a chemical conversion coating formed by immersing or subjecting to electrolytic treatment a steel sheet in a solution containing Zr ions, F ions, with adhesion amount of 0.1 to 100 mg/m2 for metal Zr and no more than 0.1 mg/m2 for F; and a hydroxyl acid treatment layer formed on the chemical conversion coating, the layer having a C adhesion amount of 0.05 to 50 mg/m2.

公开(公告)号：US09580816B2

公开(公告)日：2017-02-28

申请号：US13819500

申请日：2011-09-14

Applicant: Yuka Miyamoto ,  Takeshi Suzuki ,  Hisato Noro ,  Masao Inose ,  Hiroki Iwasa ,  Norihiko Nakamura ,  Yoichi Tobiyama

Inventor： Yuka Miyamoto ,  Takeshi Suzuki ,  Hisato Noro ,  Masao Inose ,  Hiroki Iwasa ,  Norihiko Nakamura ,  Yoichi Tobiyama

IPC: C23C28/02 ,  C25D17/12 ,  C25D7/06 ,  C25D9/10

CPC classification number: C23C28/02 ,  C25D7/0614 ,  C25D7/0642 ,  C25D9/10 ,  C25D17/12

Abstract: Provided are an apparatus for continuous electrolytic treatment of a steel sheet that is suitable for producing a surface-treated steel sheet and a method for producing the surface-treated steel sheet using the apparatus for continuous electrolytic treatment of a steel sheet. The apparatus includes N pairs of tabular electrodes having a length L and being arranged to respectively face two surfaces of a steel sheet. Each electrode includes n sections arranged in the longitudinal direction of the electrode and disposed on the surface of the electrode facing the steel sheet surface. Each section is constituted by a conductive portion including an electrode portion having a length T1 and a nonconductive portion made by making an electrode portion having a length T2 nonconductive, where n×N≧10, 0.96≧T2/(T1+T2)≧0.05, and 0.9≧T1/L≧0.1.

Abstract translation: 提供一种适用于生产表面处理钢板的钢板的连续电解处理装置以及使用钢板的连续电解处理装置的表面处理钢板的制造方法。 该装置包括N对长度为L的平板状电极，并分别面对钢板的两个表面。 每个电极包括沿着电极的纵向布置的n个部分，并且设置在面对钢板表面的电极的表面上。 每个部分由包括具有长度T1的电极部分和通过制造具有长度T2不导电的电极部分制成的非导电部分的导电部分构成，其中n×N≥10,0.96≥T2/（T1 + T2）≥0.05 ，0.9≥T1/L≥0.1。