Photoreduction method for metal complex ions
    1.
    发明申请
    Photoreduction method for metal complex ions 审中-公开
    金属络合离子光还原法

    公开(公告)号:US20060263541A1

    公开(公告)日:2006-11-23

    申请号:US11431546

    申请日:2006-05-11

    IPC分类号: C23C18/14

    CPC分类号: C23C18/14 G03F1/72

    摘要: The present invention provides a photoreduction method for metal complex ions by which strict controllability is not required in the control of its exposure amount, and a size of the metallic structure to be produced can be controlled, besides there is no fear of reducing spatial resolution of the size of the metallic structure to be produced. The photoreduction method for metal complex ions wherein a laser beam is beam-irradiated on a metal complex ion dispersion element dispersed in a material to photoreduce the metal complex ions thereby fabricating a metallic structure, includes the steps of adding a predetermined coloring matter to the material in which the metal complex ion dispersion element is dispersed, and beam-irradiating the laser beam to the material to which the predetermined coloring matter has been added.

    摘要翻译: 本发明提供了一种金属络合离子的光还原方法,其在控制曝光量时不需要严格的可控性,并且可以控制要生产的金属结构的尺寸,此外,不用担心降低空间分辨率 要生产的金属结构的尺寸。 金属络合离子的光还原方法,其中激光束被光束照射在分散在材料中的金属络合物离子分散体上,以使金属络合物离子还原,从而制造金属结构,包括以下步骤:向材料中加入预定的着色剂 其中分散了金属络合离子分散体,并将激光束照射到已加入预定色素的材料上。

    Pre-filled syringe
    2.
    发明授权
    Pre-filled syringe 失效
    预充注射器

    公开(公告)号:US08764703B2

    公开(公告)日:2014-07-01

    申请号:US13703319

    申请日:2011-06-08

    IPC分类号: A61M37/00

    摘要: In a pre-filled syringe having an intermediate gasket, a liquid drug is enclosed in the second chamber located on the base end side with respect to the intermediate gasket while a powdered drug is enclosed in the first chamber located on the front end side with respect to the intermediate gasket. The intermediate gasket has at least two layers including a front end layer corresponding to a wall of the first chamber and a base end layer corresponding to a wall of the second chamber, and also has a low water-absorptive layer in the layer on the base end side with respect to the front end layer. The base end layer is formed of a material having low water-absorptivity and not lowering a pH of the liquid drug.

    摘要翻译: 在具有中间垫圈的预填充注射器中,液体药物相对于中间垫圈封闭在位于基​​端侧的第二腔室中,同时粉末药物被封装在位于前端侧的第一腔室中 到中间垫圈。 中间垫圈具有至少两层,其包括对应于第一室的壁的前端层和对应于第二室的壁的基端层,并且在基体的该层中还具有低吸水层 相对于前端层的端侧。 基底层由具有低吸水性且不降低液体药物的pH的材料形成。

    STORAGE CONTROLLER AND VIRTUAL VOLUME CONTROL METHOD
    3.
    发明申请
    STORAGE CONTROLLER AND VIRTUAL VOLUME CONTROL METHOD 有权
    存储控制器和虚拟体积控制方法

    公开(公告)号:US20120173814A1

    公开(公告)日:2012-07-05

    申请号:US13413166

    申请日:2012-03-06

    IPC分类号: G06F12/02

    摘要: A storage system includes a virtual volume, a plurality of RAID groups, a pool unit for managing a plurality of first real storage areas and a controller. If a write command related to the virtual volume is issued from a higher-level device, the controller selects a prescribed second real storage area from among respective second real storage areas included in a prescribed first real storage area, and associates this prescribed second real storage area with a prescribed area inside the virtual volume corresponding to the write command, and which associates one virtual volume with one first real storage area. A migration destination determination unit selects a migration-targeted second real storage area from among the respective second real storage areas associated with the virtual volume, and selects a migration-destination first real storage area, which is to become the migration destination of data stored in the migration-targeted second real storage area.

    摘要翻译: 存储系统包括虚拟卷,多个RAID组,用于管理多个第一实际存储区域的池单元和控制器。 如果从上级装置发出与虚拟卷有关的写入命令,则控制器从包括在规定的第一实际存储区域的各个第二实际存储区域中选择规定的第二实际存储区域,并将该规定的第二实际存储 具有与写入命令相对应的虚拟卷内的规定区域的区域,并且将一个虚拟卷与一个第一实际存储区域相关联。 移动目的地确定单元从与虚拟卷相关联的各个第二实际存储区域中选择迁移目标第二实际存储区域,并且选择迁移目的地第一实际存储区域,其将成为存储在其中的数据的迁移目的地 迁移目标第二实际存储区域。

    Drug solution preparing kit
    4.
    发明授权
    Drug solution preparing kit 有权
    药物溶液制备试剂盒

    公开(公告)号:US08211082B2

    公开(公告)日:2012-07-03

    申请号:US12305640

    申请日:2007-06-19

    IPC分类号: A61M5/32

    摘要: To provide a drug solution preparing kit which can be handled with ease in a substantially aseptic manner, and has no risk that a leakage of a drug solution such as a splash and a dispersion of an aerosol to an ambient environment occurs upon preparation of the drug solution There is provided a drug solution preparing kit including a pre-filled syringe and a transfusing tool, wherein the pre-filled syringe includes a sealing member which seals the tip end and can not be removed from the tip end, and that the transfusing tool includes a one-way valve which can discharge only gas from the system in an irreversible manner, and a filter which is provided so as to adjoin to the second communication channel with respect to the one-way valve.

    摘要翻译: 提供可以以基本无菌的方式容易地处理的药物溶液制备试剂盒,并且不存在药物制剂在制备药物时发生诸如飞溅物和气溶胶分散体到周围环境的泄漏的风险 溶液提供了一种药液制备试剂盒,其包括预填充注射器和输液工具,其中预填充注射器包括密封前端并且不能从末端移除的密封构件,并且输液器 包括能够以不可逆方式从系统排出气体的单向阀,以及设置成与第二连通路相对于单向阀相邻的过滤器。

    Integrated circuit device and electronic instrument
    5.
    发明授权
    Integrated circuit device and electronic instrument 有权
    集成电路器件和电子仪器

    公开(公告)号:US08125269B2

    公开(公告)日:2012-02-28

    申请号:US11545625

    申请日:2006-10-10

    IPC分类号: H03K17/687

    CPC分类号: H03K19/00361 H01L27/0251

    摘要: An integrated circuit device includes an I/O circuit which buffers and outputs an input signal D from a pad when an enable signal ENB is set at a second voltage level, a circuit block to which an output signal from the I/O circuit is input, and a malfunction prevention circuit which outputs to the circuit block an output signal QP of which a voltage level is set by a first power supply VDDC in a period T1 in which the signal ENB is set at a first voltage level and a period T2 including a period in which the signal ENB changes from the first voltage level to the second voltage level, and outputs to the circuit block the output signal QP corresponding to an output signal QI from the I/O circuit in a period T3 in which the signal ENB is set at the second voltage level.

    摘要翻译: 集成电路装置包括I / O电路,当使能信号ENB被设置在第二电压电平时,I / O电路缓冲并输出来自焊盘的输入信号D,输入来自I / O电路的输出信号的电路块 以及故障防止电路,其在信号ENB被设定为第一电压电平的期间T1中输出电路块中由第一电源VDDC设定电压电平的输出信号QP,以及包括 信号ENB从第一电压电平变化到第二电压电平的时段,并且在信号ENB的时段T3中向I / O电路输出对应于来自I / O电路的输出信号QI的输出信号QP 被设置在第二电压电平。

    Storage system
    7.
    发明授权
    Storage system 有权
    存储系统

    公开(公告)号:US07707456B2

    公开(公告)日:2010-04-27

    申请号:US11702495

    申请日:2007-02-06

    IPC分类号: G06F11/00

    摘要: Proposed is a storage apparatus capable of alleviating the burden of maintenance work when a failure occurs in a part configuring the storage apparatus. This storage apparatus includes multiple disk drives and spare disk drives, and multiple controllers. When a failure occurs, this storage apparatus determines the operability status of the storage apparatus based on failure information. When operation can be continued, the storage apparatus continues to operate without performing any maintenance such as part replacement, and if operation cannot be continued, data is migrated to another storage apparatus.

    摘要翻译: 提出了一种存储装置,其能够在构成存储装置的部件发生故障时减轻维护工作的负担。 该存储装置包括多个磁盘驱动器和备用磁盘驱动器以及多个控制器。 当发生故障时,该存储装置基于故障信息来确定存储装置的可操作性状态。 当可以继续操作时,存储装置继续操作,而不执行诸如部件更换的任何维护,并且如果不能继续操作,则将数据迁移到另一存储装置。

    Image processing apparatus
    8.
    发明授权

    公开(公告)号:US07489416B2

    公开(公告)日:2009-02-10

    申请号:US10105340

    申请日:2002-03-26

    申请人: Atsushi Ishikawa

    发明人: Atsushi Ishikawa

    摘要: An MFP can transmit image data read by a scanner by attaching it to E-mail. At the time of transmission, the image data input by the scanner and stored in a work memory is converted into mail data so as to be transmitted by E-mail, and the mail data is stored again into the work memory. The mail data is divided every predetermined reference data size into divided files which are sequentially transmitted as divided mails. When completion of transmission of divided mails corresponding to a unit image is confirmed, the image data and mail data of the unit image are eliminated from the work memory. By sequentially performing such a process, the memory use efficiency can be improved while holding image data of a unit image which has not been transmitted yet.

    Disk array apparatus, method for controlling the same, and program
    9.
    发明授权
    Disk array apparatus, method for controlling the same, and program 有权
    磁盘阵列装置,控制方法和程序

    公开(公告)号:US07480820B2

    公开(公告)日:2009-01-20

    申请号:US11261772

    申请日:2005-10-31

    IPC分类号: G06F11/00

    摘要: The present invention proposes a disk array apparatus that can be inexpensively constructed while maintaining its high reliability, and also proposes a method for controlling the disk array apparatus, and a program. In the disk array apparatus, a storage area in a storage device for storing system information is managed by dividing the storage area into a system area for storing system information and a data area for storing data from a host device, and verification processing is executed on the data area in the storage device in a first cycle and on the system area in a second cycle that is shorter than the first cycle.

    摘要翻译: 本发明提出一种可以廉价地构造并且保持其高可靠性的磁盘阵列装置,并且还提出了一种用于控制磁盘阵列装置的方法和程序。 在磁盘阵列装置中,通过将存储区域划分为用于存储系统信息的系统区域和用于从主机装置存储数据的数据区域来管理用于存储系统信息的存储装置中的存储区域,并且执行验证处理 在第一周期中存储设备中的数据区域和比第一周期短的第二周期中的系统区域。

    Semiconductor device and method for manufacturing the same

    公开(公告)号:US20080128804A1

    公开(公告)日:2008-06-05

    申请号:US12009160

    申请日:2008-01-16

    申请人: Atsushi Ishikawa

    发明人: Atsushi Ishikawa

    IPC分类号: H01L27/088

    摘要: A semiconductor device, comprising: a first transistor of a second electric conductivity type formed in a substrate including impurities of a first electric conductivity type; and a second transistor of the second electric conductivity type formed in the substrate, a source region of the second transistor being shared with a source region of the first transistor; wherein in a lower layer of a gate insulating film of the first transistor, a first offset layer of the second electric conductivity type is formed adjacent to a channel region of the first transistor, in a lower layer of a gate insulating film of the second transistor, a second offset layer of the second electric conductivity type is formed adjacent to a channel region of the second transistor, and in the source region, a first diffusion layer of the first electric conductivity type and a second diffusion layer of the first electric conductivity type in the upper layer of the first diffusion layer are formed, and wherein the second diffusion layer is provided so as to come in contact with the first and second offset layers via the first diffusion layer, and the impurity concentration of the first diffusion layer is higher than the impurity concentration of the substrate.