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公开(公告)号：US20070284652A1
公开(公告)日：2007-12-13
申请号：US11783141
申请日：2007-04-06
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , H01L29/40117 , H01L29/517
摘要： A semiconductor memory device capable of suppressing detrapping of stored charges from a charge storage dielectric is disclosed. According to one aspect of the present invention, there is provided a semiconductor memory device comprising a semiconductor substrate, a blocking dielectric disposed on the semiconductor substrate a charge storage dielectric disposed on the blocking dielectric to store holes, a hole conductive dielectric disposed on the charge storage dielectric, and a gate electrode disposed on the hole conductive dielectric.
摘要翻译： 公开了能够抑制存储电荷从电荷存储电介质中去除的半导体存储器件。 根据本发明的一个方面，提供了一种半导体存储器件，其包括半导体衬底，设置在半导体衬底上的阻挡电介质，设置在阻挡电介质上以存储孔的电荷存储电介质，设置在电荷上的导电电介质 存储电介质和设置在导电电介质上的栅电极。
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公开(公告)号：US07335562B2
公开(公告)日：2008-02-26
申请号：US11494736
申请日：2006-07-28
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。
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公开(公告)号：US20070278587A1
公开(公告)日：2007-12-06
申请号：US11798068
申请日：2007-05-10
申请人： Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
发明人： Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
IPC分类号： H01L29/94
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/28079 , H01L21/28097 , H01L21/28202 , H01L21/2822 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/518 , H01L29/6656 , H01L29/6659 , H01L29/785
摘要： This disclosure concerns a semiconductor device comprising a semiconductor substrate; a gate dielectric film provided on the semiconductor substrate and containing Hf, Si, and O or containing Zr, Si and O; a gate electrode of an n-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon; an aluminum layer provided at a bottom portion of the gate electrode of the n-channel FET; and a gate electrode of a p-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon.
摘要翻译： 本公开涉及包括半导体衬底的半导体器件; 设置在半导体衬底上并含有Hf，Si和O或含有Zr，Si和O的栅极电介质膜; 设置在所述栅极电介质膜上的n沟道FET的栅电极，所述栅电极由含有比所述硅含量高的镍的镍硅化物制成; 设置在n沟道FET的栅电极的底部的铝层; 以及设置在所述栅极电介质膜上的p沟道FET的栅电极，所述栅电极由镍含量高于硅的镍的硅化镍制成。
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公开(公告)号：US20070093032A1
公开(公告)日：2007-04-26
申请号：US11494736
申请日：2006-07-28
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。
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公开(公告)号：US08022486B2
公开(公告)日：2011-09-20
申请号：US11882012
申请日：2007-07-30
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L21/823842 , H01L21/02148 , H01L21/02178 , H01L21/02271 , H01L21/02332 , H01L21/0234 , H01L21/28097 , H01L21/3145 , H01L21/3162 , H01L21/31645 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/66507 , H01L29/66545
摘要： A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的p沟道MOS晶体管，所述p沟道MOS晶体管包括包括Hf的第一栅极电介质膜，设置在第一栅极电介质膜上的第二栅极电介质膜， 氧化铝和设置在第二栅极电介质膜上的第一金属硅化物栅电极。
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公开(公告)号：US07883974B2
公开(公告)日：2011-02-08
申请号：US12585555
申请日：2009-09-17
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。
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公开(公告)号：US07608498B2
公开(公告)日：2009-10-27
申请号：US12003802
申请日：2008-01-02
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。
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公开(公告)号：US20080182396A1
公开(公告)日：2008-07-31
申请号：US12003802
申请日：2008-01-02
IPC分类号： H01L21/3205
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
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公开(公告)号：US20100055854A1
公开(公告)日：2010-03-04
申请号：US12585555
申请日：2009-09-17
IPC分类号： H01L21/8234
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。
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公开(公告)号：US20090014809A1
公开(公告)日：2009-01-15
申请号：US11882012
申请日：2007-07-30
IPC分类号： H01L21/28 , H01L27/092 , H01L29/423
CPC分类号： H01L21/823842 , H01L21/02148 , H01L21/02178 , H01L21/02271 , H01L21/02332 , H01L21/0234 , H01L21/28097 , H01L21/3145 , H01L21/3162 , H01L21/31645 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/66507 , H01L29/66545
摘要： A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的p沟道MOS晶体管，所述p沟道MOS晶体管包括包括Hf的第一栅极电介质膜，设置在第一栅极电介质膜上的第二栅极电介质膜， 氧化铝和设置在第二栅极电介质膜上的第一金属硅化物栅电极。
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