公开(公告)号：US20070278587A1

公开(公告)日：2007-12-06

申请号：US11798068

申请日：2007-05-10

申请人： Tomonori Aoyama ,  Tomohiro Saito ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Motoyuki Sato ,  Takuya Kobayashi

发明人： Tomonori Aoyama ,  Tomohiro Saito ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Motoyuki Sato ,  Takuya Kobayashi

IPC分类号： H01L29/94

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/28079 ,  H01L21/28097 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/785

摘要： This disclosure concerns a semiconductor device comprising a semiconductor substrate; a gate dielectric film provided on the semiconductor substrate and containing Hf, Si, and O or containing Zr, Si and O; a gate electrode of an n-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon; an aluminum layer provided at a bottom portion of the gate electrode of the n-channel FET; and a gate electrode of a p-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon.

摘要翻译： 本公开涉及包括半导体衬底的半导体器件; 设置在半导体衬底上并含有Hf，Si和O或含有Zr，Si和O的栅极电介质膜; 设置在所述栅极电介质膜上的n沟道FET的栅电极，所述栅电极由含有比所述硅含量高的镍的镍硅化物制成; 设置在n沟道FET的栅电极的底部的铝层; 以及设置在所述栅极电介质膜上的p沟道FET的栅电极，所述栅电极由镍含量高于硅的镍的硅化镍制成。

公开(公告)号：US20080138969A1

公开(公告)日：2008-06-12

申请号：US11948344

申请日：2007-11-30

申请人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

发明人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

IPC分类号： H01L21/28

CPC分类号： H01L29/517 ,  H01L21/28097 ,  H01L21/3215 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66507

摘要： A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method has: forming a gate insulating film; forming a first gate electrode layer, and forming a second gate electrode layer; forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer; forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer; forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.

摘要翻译： 一种制造具有第一导电类型的MOSFET的半导体器件的方法和形成在半导体衬底上的与第一导电类型不同的第二导电类型的MOSFET，该方法具有：形成栅极绝缘膜; 形成第一栅电极层，形成第二栅电极层; 在所述第一栅电极层和所述第二栅电极层上形成第一含金属层; 形成用于防止金属在所述第一金属含有层上的扩散的第二含金属层; 在所述第二栅电极层上形成第三金属含有层，从所述第二金属含有层和所述第二金属含有层选择性地除去所述第三金属含有层，所述第三金属含有层的厚度与所述第一金属含有层的厚度不同 其中所述第三含金属层包含与所述第一含金属层中所含的金属或合金相同的金属或合金; 并进行热处理，从而使包含在所述第一金属含有层中的金属与所述第一栅极电极层之间产生反应，将所述第一栅电极层转换成合金，并引起所述第三金属含有层中含有的金属与所述 第二栅极电极层，以将所述第二栅电极层转换成合金，从而形成不同组成的栅极。

公开(公告)号：US07521309B2

公开(公告)日：2009-04-21

申请号：US11948344

申请日：2007-11-30

申请人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

发明人： Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Tomohiro Saito ,  Kazuaki Nakajima ,  Tomonori Aoyama

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28097 ,  H01L21/3215 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66507

摘要： A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method has: forming a gate insulating film; forming a first gate electrode layer, and forming a second gate electrode layer; forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer; forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer; forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.

摘要翻译： 一种制造具有第一导电类型的MOSFET的半导体器件的方法和形成在半导体衬底上的与第一导电类型不同的第二导电类型的MOSFET，该方法具有：形成栅极绝缘膜; 形成第一栅电极层，形成第二栅电极层; 在所述第一栅电极层和所述第二栅电极层上形成第一含金属层; 形成用于防止金属在所述第一金属含有层上的扩散的第二含金属层; 在所述第二栅电极层上形成第三金属含有层，从所述第二金属含有层和所述第二金属含有层被选择性地除去，所述第三金属含有层的厚度与所述第一金属含有层的厚度不同 其中所述第三含金属层包含与所述第一含金属层中所含的金属或合金相同的金属或合金; 并进行热处理，从而使包含在所述第一金属含有层中的金属与所述第一栅极电极层之间产生反应，将所述第一栅电极层转换成合金，并引起所述第三金属含有层中含有的金属与所述 第二栅极电极层，以将所述第二栅电极层转换成合金，从而形成不同组成的栅电极。

公开(公告)号：US20060273413A1

公开(公告)日：2006-12-07

申请号：US11185678

申请日：2005-07-21

申请人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

发明人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

IPC分类号： H01L29/94

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： There are provided: a semiconductor substrate including first and second device regions isolated by device isolation regions; a first gate insulating film of a high-k material formed in the first device region; a first gate electrode formed on the first gate insulating film; first source and drain regions formed at both sides of the first gate electrode in the first device region; a second gate insulating film of a high-k material which is different from the high-k material of the first gate insulating film, the second gate insulating film being formed in the second device region; a second gate electrode formed on the second gate insulating film; and second source and drain regions formed at both sides of the second gate electrode in the second device region.

摘要翻译： 提供：包括由器件隔离区域隔离的第一和第二器件区域的半导体衬底; 形成在所述第一器件区域中的高k材料的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的第一栅电极; 形成在第一器件区域中的第一栅电极的两侧的第一源极和漏极区; 与所述第一栅极绝缘膜的高k材料不同的高k材料的第二栅极绝缘膜，所述第二栅极绝缘膜形成在所述第二器件区域中; 形成在所述第二栅极绝缘膜上的第二栅电极; 以及形成在第二器件区域中的第二栅电极的两侧的第二源极和漏极区。

公开(公告)号：US20070099370A1

公开(公告)日：2007-05-03

申请号：US11524237

申请日：2006-09-21

申请人： Kazuaki Nakajima ,  Tomohiro Saito

发明人： Kazuaki Nakajima ,  Tomohiro Saito

IPC分类号： H01L21/8238

CPC分类号： H01L21/823828 ,  H01L21/28052 ,  H01L21/28097 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor device includes forming a gate insulating film on a semiconductor substrate, and forming a gate electrode comprising a metal semiconductor compound layer and having a predetermined gate length on the gate insulating film, the forming the gate electrode including forming a polycrystalline semiconductor film having an average grain diameter below a specific size depending on the predetermined gate length and including at least one of silicon and germanium, the average grain diameter of the semiconductor film being 5 nm or more and 90 nm or less, forming a metal film on the semiconductor film, and converting whole of the semiconductor film into the metal semiconductor compound layer by reacting the semiconductor film and the metal film by heat treatment.

摘要翻译： 一种半导体器件的制造方法包括：在半导体衬底上形成栅极绝缘膜，在所述栅极绝缘膜上形成包含金属半导体化合物层并具有规定的栅极长度的栅电极，形成所述栅电极，形成多晶 半导体膜的平均粒径小于规定的栅极长度的特定尺寸，并且包括硅和锗中的至少一种，半导体膜的平均粒径为5nm以上且90nm以下，形成金属膜 并且通过热处理使半导体膜和金属膜反应而将整个半导体膜转换成金属半导体化合物层。

公开(公告)号：US20080197429A1

公开(公告)日：2008-08-21

申请号：US12033566

申请日：2008-02-19

申请人： Motoyuki Sato ,  Tomohiro Saito

发明人： Motoyuki Sato ,  Tomohiro Saito

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L29/518 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/7833

摘要： A semiconductor device includes: a silicon oxide film; a metal silicate insulating film provided on the silicon oxide film and having a higher dielectric constant than the silicon oxide film; and a gate electrode provided on the metal silicate insulating film. A composition ratio of a metal element in the metal silicate insulating film on a side closer to the gate electrode is lower than a composition ratio of the metal element in the metal silicate insulating film on a side closer to the silicon oxide film.

摘要翻译： 半导体器件包括：氧化硅膜; 设置在所述氧化硅膜上并且具有比所述氧化硅膜更高的介电常数的金属硅酸盐绝缘膜; 以及设置在金属硅酸盐绝缘膜上的栅电极。 金属硅酸盐绝缘膜中靠近栅电极的金属元素的组成比低于金属硅酸盐绝缘膜中更靠近氧化硅膜的金属元素的组成比。

公开(公告)号：US09287050B2

公开(公告)日：2016-03-15

申请号：US13413889

申请日：2012-03-07

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L29/84 ,  H01G5/18 ,  B81C1/00

CPC分类号： H01G5/18 ,  B81B2201/018 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0126

摘要： According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure, and is driven in a direction of the first electrode.

摘要翻译： 根据一个实施例，MEMS包括第一电极，第一辅助结构和第二电极。 第一电极设置在基板上。 第一辅助结构设置在基板上并与第一电极相邻。 第一辅助结构处于电浮动状态。 第二电极设置在第一电极和第一辅助结构之上，并且沿第一电极的方向被驱动。

公开(公告)号：US08905593B2

公开(公告)日：2014-12-09

申请号：US13601735

申请日：2012-08-31

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： F21V13/04 ,  G02B19/00 ,  F21V5/02 ,  F21V7/00 ,  F21Y101/02 ,  F21V3/04

CPC分类号： F21V5/02 ,  F21V3/04 ,  F21V7/0091 ,  F21Y2115/10 ,  G02B19/0009 ,  G02B19/0028 ,  G02B19/0061

摘要： A luminous flux control member that controls travelling direction of light emitted from a light source includes an incident area, an emission area, and a plurality of projecting sections. The plurality of projecting sections are constituted by an inner area, an intermediate area, and a peripheral area defined in the radial direction, and a first specific projecting section disposed in the inner area is configured such that a planar section that is used to measure the height of the first specific projecting section and is perpendicular to the optical axis is connected to an inner peripheral end and an outer peripheral end of a base end portion of the first specific projecting section. The projecting sections other than the first specific projecting section, in principle, come into contact internally or externally with another projecting section other than the first specific projecting section.

摘要翻译： 控制从光源射出的光的行进方向的光束控制部件具有入射面积，发光面积，以及多个突出部。 多个突出部分由沿径向限定的内部区域，中间区域和周边区域构成，并且设置在内部区域中的第一特定突出部分被构造成使得用于测量 第一特定突出部的高度，与光轴垂直的高度与第一特定突出部的基端部的内周端和外周端连接。 原理上，除了第一特定突出部分之外的突出部分在内部或外部与除第一特定突出部分之外的另一个突出部分接触。

公开(公告)号：US08475618B2

公开(公告)日：2013-07-02

申请号：US13198867

申请日：2011-08-05

申请人： Mamo Matsumoto ,  Tomohiro Saito ,  Nobuhiro Ito

发明人： Mamo Matsumoto ,  Tomohiro Saito ,  Nobuhiro Ito

IPC分类号： B32B37/16

CPC分类号： H01L51/5246 ,  H01J9/241 ,  H01L51/525

摘要： A manufacturing method of a hermetic container includes an assembling step of assembling the hermetic container and a sealing step of sealing by first and second sealing materials. Thus, in a case where local heating light is scanned toward an already-sealed portion of the second sealing material, since a separation portion of an unsealed state is located between the already-sealed portion and a downstream end of scanning, a load due to expansion/contraction of a frame body is applied to the first sealing material which is present in the separation portion of the unsealed state. After then, since the local heating light is irradiated to the first sealing material to which the load has been applied so as to heat and melt it, the load is relieved, whereby it is possible to suppress deterioration of joining strength and airtightness of the hermetic container.

摘要翻译： 密封容器的制造方法包括组装密封容器的组装步骤和通过第一和第二密封材料密封的密封步骤。 因此，在向第二密封材料的已经密封的部分扫描局部加热光的情况下，由于未密封状态的分离部位于已经密封的部分和扫描的下游端之间，所以由于 将框体的伸缩进行施加到存在于未密封状态的分离部中的第一密封材料。 然后，由于局部加热光被照射到已经施加负载的第一密封材料上以加热和熔化，所以负载被释放，从而可以抑制密封件的接合强度和气密性的劣化 容器。

公开(公告)号：US20120081910A1

公开(公告)日：2012-04-05

申请号：US13250601

申请日：2011-09-30

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： F21V5/00

CPC分类号： F21V5/045 ,  F21V5/04 ,  F21V7/0091 ,  F21W2131/405 ,  F21Y2115/10 ,  G02B5/045 ,  G02B19/0028 ,  G02B19/0061 ,  G02B19/0071 ,  G03B2215/0592

摘要： The invention is capable of easily suppressing deterioration of light distribution characteristics caused by unnecessary light with certainty, using a design that is not difficult to manufacture, and improving efficiency of light utilization.A projecting section 11 has a third surface 23 between a first surface 14 (incident surface) and a second surface 15 (total reflection surface). The third surface 23 is formed into an angled surface that is angled in relation to an optical axis OA, of which one end section joined with the first surface 14 is positioned further to a light source 6 side than another end section joined with the second surface 15. The overall light that has entered the third surface 23 of each of a plurality of projecting sections 11 is refracted by the third surfaces 23 towards an exit surface 5 side with positive power.

摘要翻译： 本发明能够使用不难制造的设计，提高光利用效率，能够容易地抑制由不必要的光引起的配光特性的劣化。 突出部分11具有在第一表面14（入射表面）和第二表面15（全反射表面）之间的第三表面23。 第三表面23形成为相对于光轴OA成角度的成角度的表面，其中与第一表面14接合的一个端部部分进一步位于与第二表面接合的另一端部分的光源6侧 已经进入多个突出部分11中的每一个的第三表面23的总体光被第三表面23以正向力朝向出射表面5侧折射。