公开(公告)号：US20090148782A1

公开(公告)日：2009-06-11

申请号：US12330653

申请日：2008-12-09

申请人： Takuya Kono ,  Tetsuro Nakasugi ,  Masamitsu Ito ,  Tatsuhiko Higashiki

发明人： Takuya Kono ,  Tetsuro Nakasugi ,  Masamitsu Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F7/70433 ,  G03F7/70066 ,  G03F7/70425

摘要： An exposure method includes setting a photo mask into an exposure apparatus. The exposure apparatus includes an opening/closing unit configured to block a part of exposure light from a light source to the wafer. The photo mask having a product area in which a pattern to be used when a central part of a wafer is exposed is formed and peripheral exposure areas in each of which a pattern to be used when a peripheral area is exposed is formed. The peripheral exposure areas are formed to have a plurality of types of pattern densities. Then, a peripheral part of the wafer exposed. When exposing, the opening/closing unit is opened such that one or more of exposed photo mask areas selected from among the peripheral exposure areas has a pattern density corresponding to a shot position of the peripheral part.

摘要翻译： 曝光方法包括将光掩模设置到曝光装置中。 曝光装置包括：打开/关闭单元，被配置为将来自光源的曝光光的一部分阻挡到晶片。 形成具有当晶片的中心部分露出时要使用的图案的产品区域的光掩模，并且形成周边曝光区域，其中当外围区域暴露时使用的图案。 外围曝光区域形成为具有多种图案密度。 然后，晶片的周边部分暴露出来。 当曝光时，打开/关闭单元使得从外围曝光区域中选择的一个或多个曝光的光掩模区域具有与周边部分的拍摄位置对应的图案密度。

公开(公告)号：US07630052B2

公开(公告)日：2009-12-08

申请号：US11024322

申请日：2004-12-29

申请人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makato Ikeda

发明人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makato Ikeda

IPC分类号： G03B27/32 ,  G03B27/54 ,  G03D5/00 ,  G03C5/00 ,  H01L21/00

CPC分类号： H01L21/67253

摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.

摘要翻译： 曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元， 显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据 由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元 用于处理对象上的晶圆。

公开(公告)号：US20070096764A1

公开(公告)日：2007-05-03

申请号：US11586527

申请日：2006-10-26

申请人： Takuya Kono ,  Tatsuhiko Higashiki

发明人： Takuya Kono ,  Tatsuhiko Higashiki

IPC分类号： G01R31/26

CPC分类号： G03F7/70341

摘要： An immersion exposure apparatus includes a substrate holding unit which holds a substrate to be exposed, a projection lens provided above the substrate holding unit to supply exposure light to the substrate held on the substrate holding unit, a liquid supply unit which supplies a liquid to an area between the substrate held on the substrate holding unit and the projection lens, and a structural unit which surrounds the substrate holding unit and which is configured to supply an interposer to an area between the structural unit and the substrate held on the substrate holding unit.

摘要翻译： 浸渍曝光装置包括：保持要曝光的基板的基板保持单元;设置在基板保持单元上方的投影透镜，用于向保持在基板保持单元上的基板提供曝光光;液体供应单元， 保持在基板保持单元上的基板与投影透镜之间的区域以及围绕基板保持单元的结构单元，其构造成将中介层提供给保持在基板保持单元上的结构单元和基板之间的区域。

公开(公告)号：US07046334B2

公开(公告)日：2006-05-16

申请号：US10808300

申请日：2004-03-25

申请人： Takuya Kono ,  Tatsuhiko Higashiki

发明人： Takuya Kono ,  Tatsuhiko Higashiki

IPC分类号： G03B27/42 ,  G03B27/58 ,  G03B27/62 ,  G03B27/52

CPC分类号： G03F7/703

摘要： An exposure system includes, (a) an exposure apparatus, and (b) a displacement correction apparatus having a curvature information storage unit configured to store curvature information of a reticle; a displacement information calculation unit configured to calculate displacement generated in the reticle being fixed on a reticle stage of an exposure apparatus based on the curvature information; and a correction information calculation unit configured to calculate correction information for correcting a projection lens of the exposure apparatus based on the displacement.

摘要翻译： 曝光系统包括：（a）曝光装置，和（b）具有曲率信息存储单元的位移校正装置，其被配置为存储标线的曲率信息; 位移信息计算单元，被配置为基于所述曲率信息计算在所述掩模版上产生的位移，所述位移固定在所述曝光装置的标线片平台上; 以及校正信息计算单元，被配置为基于所述位移来计算校正所述曝光装置的投影透镜的校正信息。

公开(公告)号：US20060001846A1

公开(公告)日：2006-01-05

申请号：US11170165

申请日：2005-06-30

申请人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

发明人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G03B27/00

CPC分类号： G03F7/70625

摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.

摘要翻译： 曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案， 选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量 秒计算剂量。

公开(公告)号：US20050170262A1

公开(公告)日：2005-08-04

申请号：US11024322

申请日：2004-12-29

申请人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makoto Ikeda

发明人： Takuya Kono ,  Nobuhiro Komine ,  Tatsuhiko Higashiki ,  Shoichi Harakawa ,  Makoto Ikeda

IPC分类号： G03F7/30 ,  G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  G03G15/08 ,  G21K5/00 ,  H01L21/00 ,  H01L21/027

CPC分类号： H01L21/67253

摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.

摘要翻译： 曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元， 显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据 由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元 用于处理对象上的晶圆。

公开(公告)号：US20100320631A1

公开(公告)日：2010-12-23

申请号：US12720978

申请日：2010-03-10

申请人： Masaru Suzuki ,  Takuya Kono

发明人： Masaru Suzuki ,  Takuya Kono

IPC分类号： B29C45/76 ,  B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method of processing a substrate according to an embodiment includes carrying out an imprint processing that transfer a pattern formed in a template onto a flowable material disposed on a semiconductor substrate so as to obtain a transfer pattern, and at least one processing selected from the group consisting of an inspection processing of an semiconductor substrate, an applying processing of a separating material and an inspection-cleaning processing in parallel in the same processing chamber.

摘要翻译： 根据实施例的处理基板的方法包括执行将模板中形成的图案转印到设置在半导体基板上的可流动材料上以获得转印图案的压印处理，以及从组中选择的至少一种处理 包括半导体衬底的检查处理，分离材料的施加处理和在同一处理室中并行的检查清洁处理。

公开(公告)号：US07652747B2

公开(公告)日：2010-01-26

申请号：US11474298

申请日：2006-06-26

申请人： Takuya Kono ,  Kazuya Fukuhara ,  Daisuke Kawamura

发明人： Takuya Kono ,  Kazuya Fukuhara ,  Daisuke Kawamura

IPC分类号： G03B27/52

CPC分类号： G03F7/70891 ,  G03F7/70341

摘要： This invention discloses an immersion exposure method which executes immersion exposure for an exposure target film by transferring an image of a pattern formed on a mask onto the exposure target film through an immersion medium. A first vapor pressure as the target value in an immersion exposure atmosphere which surrounds the immersion medium is set. A second vapor pressure in the immersion exposure atmosphere is measured. The first vapor pressure is compared with the second vapor pressure. Whether to adjust the vapor pressure in the immersion exposure atmosphere is selected in accordance with the comparison result.

摘要翻译： 本发明公开了一种浸渍曝光方法，其通过浸渍介质将曝光目标膜上形成的图案的图像转印到曝光目标膜上，对曝光目标膜进行浸没曝光。 设置围绕浸渍介质的浸没曝光气氛中作为目标值的第一蒸气压。 测量浸渍曝光气氛中的第二蒸气压。 将第一蒸气压与第二蒸气压进行比较。 根据比较结果选择是否调整浸入曝光气氛中的蒸气压。

公开(公告)号：US20080278703A1

公开(公告)日：2008-11-13

申请号：US12116350

申请日：2008-05-07

申请人： Takuya Kono

发明人： Takuya Kono

IPC分类号： G03B27/42 ,  G03F7/22

CPC分类号： G03F9/7096 ,  G03F9/7088

摘要： An immersion exposure apparatus includes a placement unit on which a substrate is to be placed, the substrate including a body to be processed and a resist film on the body, a projection optical system including a projection lens, a liquid supply unit including an immersion nozzle, a measurement unit for measuring positions of alignment marks Mi (i=1, 2, . . . ) on the substrate, and a control unit for controlling a position of the placement unit on which the substrate is placed so that a pattern image of the photo mask is projected onto a predetermined position on the substrate when immersion exposure to the substrate is performed based on a measurement value acquired by the measurement unit and a correction value for correcting a measurement error resulting from a change of a measurement environment caused during measurement of alignment marks Mi.

摘要翻译： 浸渍曝光装置包括：放置基板的放置单元，包括被处理体的基板和主体上的抗蚀剂膜;投影光学系统，包括投影透镜;液体供应单元，包括浸没喷嘴 ，用于测量基板上的对准标记Mi（i = 1,2等）的位置的测量单元，以及控制单元，用于控制放置基板的放置单元的位置，使得图案图像 当基于由测量单元获取的测量值进行浸没曝光到基板时，将光掩模投影到基板上的预定位置，以及用于校正由测量期间引起的测量环境变化导致的测量误差的校正值 对准标记

公开(公告)号：US20060177776A1

公开(公告)日：2006-08-10

申请号：US11315000

申请日：2005-12-23

申请人： Kentaro Matsunaga ,  Takuya Kono ,  Shinichi Ito

发明人： Kentaro Matsunaga ,  Takuya Kono ,  Shinichi Ito

IPC分类号： G03F7/20

CPC分类号： G03F7/70341

摘要： There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

摘要翻译： 公开了一种在液体至少部分地填充在待曝光的基板和进行曝光处理的曝光装置的投影光学系统之间进行曝光处理的浸渍曝光方法，包括进行以下处理： 与具有与基板的外周部分相邻的区域的液体的接触角相比，与基板的主表面的至少外周部分形成与液体大的接触角，该区域是表面的一部分 支撑包含在曝光装置中的基板的基板支撑部件的基板支撑侧，进行曝光处理。