摘要:
Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.
摘要:
Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.
摘要翻译:密度为2.0〜2.18g / cm 3的不透明二氧化硅玻璃,二氧化硅玻璃中的钠和钾元素浓度为0.5ppm以下,OH基浓度为30ppm以下,并且含有具有以下的独立气泡的气泡 物理值:气泡直径为300μm以下,气泡密度为100,000〜1,000,000个气泡/ cm 3,以及不透明石英玻璃的制造方法,其特征在于,填充粒径为10〜350μm的石英原料粒子 在耐热模具中,将其在非氧化性气氛中从室温加热到低于50-150℃的温度,而不是以不升温速度将上述原料颗粒熔化的温度 超过50℃/分钟,然后缓慢加热至高于10℃至80℃的温度,高于石英原料颗粒以10℃/分钟或更低的速度熔化的温度, 并保持冷却 在上述温度下。
摘要:
A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature. Especially, in the case of producing a large scale opaque silica glass block, a quartz raw material grain filled into a heat-resistant mold is heated by a belt-like heating source located perpendicularly to a trunk of a filling layer of the quartz raw material grain so as to form a moving heating zone in the filling layer and the heating zone is successively moved either upwardly starting at the lower end portion of the filling layer or downwardly starting at the upper end portion thereof in a non-oxidizing atomosphere.
摘要:
An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
摘要:
An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
摘要:
Provided in a facile manner are a black synthetic quartz glass with a transparent layer, which meets demands for various shapes, has a black portion satisfying required light shield property and emissivity in an infrared region, keeps a purity equivalent to that of a synthetic quartz glass in terms of metal impurities, has a high-temperature viscosity characteristic comparable to that of a natural quartz glass, can be subjected to high-temperature processing such as welding, does not release carbon from its surface, and is free of bubbles and foreign matter in the transparent layer and the black quartz glass, and at an interface between the transparent layer and the black quartz glass, and a production method therefor.
摘要:
An operation arrangement work is accelerated by improving efficiency of not only process of generating an operation arrangement proposal but also process of confirming whether the operation arrangement proposal is good or not by a user. An operation support system has an operation arrangement proposal generation part (1110) which executes automatic generation of an operation arrangement proposal, a diagram prediction part which executes simulation of train operation in the future, a diagram display part (1120) which displays an operation schedule and the operation arrangement proposal as a diagram, and a user input part which receives input of a parameter from the user. The system has a snapshot restoration part (1130) which restores snapshots of the operation arrangement proposal in an automatic generation process on the basis of a diagram change history outputted by the operation arrangement proposal generation part (1110), and a snapshot display input part (1140) which displays to the user a snapshot according to input from the user.
摘要:
A recording medium stores an information processing program that causes a computer to execute storing a compression symbol map group having a bit string indicating for each character code, presence or absence of the character code in a file group, and a Huffman tree whose leaf corresponding to the character code has a pointer to a compression symbol map of the character code, the Huffman tree converting the character code into a compression symbol of the character code; compressing sequentially and according to the Huffman tree, a character code to be compressed and described in a file of the file group; detecting access to the leaf at the compressing; identifying by a pointer in the accessed leaf, a compression symbol map of the character code to be compressed; and updating a bit that indicates presence or absence of the character code to be compressed, in the identified compression symbol map.
摘要:
The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
摘要:
The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.