公开(公告)号：US20120051079A1

公开(公告)日：2012-03-01

申请号：US13217231

申请日：2011-08-24

申请人： Tatsuma Saito ,  Yusuke Yokobayashi ,  Shigeru Murata

发明人： Tatsuma Saito ,  Yusuke Yokobayashi ,  Shigeru Murata

IPC分类号： B60Q1/04 ,  F21V23/02

CPC分类号： F21S41/147 ,  F21S41/19 ,  H01L27/153 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

摘要： A lamp assembly is provided, that utilizes a light source including an LED element without cutting part of light therefrom and capable of forming a luminance distribution where the light with a maximum peak portion can be arranged substantially at (i.e., at or near) the cutoff line, thereby improving light utilization efficiency. The lamp assembly with an illumination direction can include a light source including an LED element with an emission surface, and a projection optical system for projecting an image of the light source in the illumination direction so that a desired light distribution pattern can be formed on a virtual vertical screen. The light source can have a rectangular shape having long sides and short sides, and can be configured to provide a luminance distribution on the emission surface such that a luminance peak portion is provided at or near one of the long sides. The lamp assembly can project an image corresponding to the luminance peak portion toward a predetermined area in the desired light distribution pattern.

摘要翻译： 提供了一种灯组件，其利用包括LED元件的光源而不切割其中的一部分光，并且能够形成亮度分布，其中具有最大峰部分的光可以基本上位于（即，在或接近）截止 从而提高光的利用效率。 具有照明方向的灯组件可以包括包括具有发射表面的LED元件的光源和用于在照明方向上投射光源的图像的投影光学系统，使得能够在 虚拟垂直屏幕。 光源可以具有长边和短边的矩形形状，并且可以被配置为在发射表面上提供亮度分布，使得在长边或其附近设置亮度峰值部分。 灯组件可以将对应于亮度峰值部分的图像投射到期望的光分布图案中的预定区域。

公开(公告)号：US08686636B2

公开(公告)日：2014-04-01

申请号：US13217231

申请日：2011-08-24

申请人： Tatsuma Saito ,  Yusuke Yokobayashi ,  Shigeru Murata

发明人： Tatsuma Saito ,  Yusuke Yokobayashi ,  Shigeru Murata

IPC分类号： B60Q1/04 ,  B60Q1/14

CPC分类号： F21S41/147 ,  F21S41/19 ,  H01L27/153 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

摘要： A lamp assembly is provided, that utilizes a light source including an LED element without cutting part of light therefrom and capable of forming a luminance distribution where the light with a maximum peak portion can be arranged substantially at (i.e., at or near) the cutoff line, thereby improving light utilization efficiency. The lamp assembly with an illumination direction can include a light source including an LED element with an emission surface, and a projection optical system for projecting an image of the light source in the illumination direction so that a desired light distribution pattern can be formed on a virtual vertical screen. The light source can have a rectangular shape having long sides and short sides, and can be configured to provide a luminance distribution on the emission surface such that a luminance peak portion is provided at or near one of the long sides.

摘要翻译： 提供了一种灯组件，其利用包括LED元件的光源而不切割其中的一部分光，并且能够形成亮度分布，其中具有最大峰部分的光可以基本上位于（即，在或接近）截止 从而提高光的利用效率。 具有照明方向的灯组件可以包括包括具有发射表面的LED元件的光源和用于在照明方向上投射光源的图像的投影光学系统，使得能够在 虚拟垂直屏幕。 光源可以具有长边和短边的矩形形状，并且可以被配置为在发射表面上提供亮度分布，使得在长边或其附近设置亮度峰值部分。

公开(公告)号：US08860067B2

公开(公告)日：2014-10-14

申请号：US13311050

申请日：2011-12-05

申请人： Yusuke Yokobayashi ,  Satoshi Tanaka ,  Tatsuma Saito

发明人： Yusuke Yokobayashi ,  Satoshi Tanaka ,  Tatsuma Saito

IPC分类号： H01L33/62 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38

CPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/382 ,  H01L2224/14

摘要： A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.

摘要翻译： 一种半导体发光器件，其具有设置在半导体膜的相同表面侧的n电极和p电极，其中促进了半导体膜中的电流扩散，使得发光效率和可靠性的提高，发光强度均匀化 跨越表面，并且可以实现正向电压的降低。 半导体发光器件包括：包含n型半导体层，有源层和p型半导体层的半导体膜; 形成在n型半导体层的暴露表面上的n电极，通过从p型半导体层，有源层和n型半导体层的表面侧进入而露出的n型半导体层 型半导体层; 和p电极。 具有比n型半导体层高的导电率的电流引导部分设置在p型电极上的n型半导体层上或其中。

公开(公告)号：US20100120228A1

公开(公告)日：2010-05-13

申请号：US12615277

申请日：2009-11-10

申请人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/78 ,  H01L21/302

CPC分类号： H01L33/0095 ,  B23K26/0604 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  Y10S438/977

摘要： A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates though a portion of said metal support that remains where the first divining groove is formed.

摘要翻译： 提供了具有金属支撑件的半导体器件的制造方法。 一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 以及将第二激光束辐射到所述金属支撑件上以形成第二分隔槽，该第二分割槽穿过所述金属支撑件的保持在形成所述第一凹槽的位置的部分。

公开(公告)号：US08211781B2

公开(公告)日：2012-07-03

申请号：US12615277

申请日：2009-11-10

申请人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/461

CPC分类号： H01L33/0095 ,  B23K26/0604 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  Y10S438/977

摘要： A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.

摘要翻译： 提供了具有金属支撑件的半导体器件的制造方法。 一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 并且将第二激光束辐射到所述金属支撑件上以形成第二分隔槽，该第二分隔槽穿过保留在形成第一分隔槽的部分所述金属支撑件。

公开(公告)号：US20110104835A1

公开(公告)日：2011-05-05

申请号：US12917682

申请日：2010-11-02

申请人： Noriko NIHEI ,  Tatsuma Saito ,  Yusuke Yokobayashi

发明人： Noriko NIHEI ,  Tatsuma Saito ,  Yusuke Yokobayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/0079

摘要： A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves.

摘要翻译： 制造具有提高的产量和发射功率的半导体发光元件的方法使用激光剥离，并且包括以下步骤：在第一主表面上形成由第一半导体层，有源层和第二半导体层形成的半导体生长层 的生长底物; 在所述第二半导体层上形成多个接合电极，并且形成布置成格栅的引导槽，以围绕所述第二半导体层中的每个所述接合电极; 通过接合电极将支撑体和半导体生长层接合在一起; 投射激光以分离生长衬底; 将半导体生长层分割成用于半导体发光元件的各个元件区域; 并切割支撑体，从而分离成半导体发光元件。 去除区域包括形成引导槽的区域，由引导槽形成的第二半导体层的侧壁在引导槽的交叉处具有斜面形状。

公开(公告)号：US08460957B2

公开(公告)日：2013-06-11

申请号：US12911022

申请日：2010-10-25

申请人： Tatsuma Saito ,  Yusuke Yokobayashi

发明人： Tatsuma Saito ,  Yusuke Yokobayashi

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support.

摘要翻译： 一种制造高品质光学半导体器件的方法包括：（a）制备生长衬底; （b）在生长衬底上形成半导体层; （c）通过电镀在所述半导体层上形成由铜制成的金属载体; （d）从半导体层分离生长衬底以除去生长衬底; 和（e）进行热处理，以便形成金属载体的铜中的晶粒和空隙的均匀密度分布。

公开(公告)号：US08097493B2

公开(公告)日：2012-01-17

申请号：US12917682

申请日：2010-11-02

申请人： Noriko Nihei ,  Tatsuma Saito ,  Yusuke Yokobayashi

发明人： Noriko Nihei ,  Tatsuma Saito ,  Yusuke Yokobayashi

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L33/0095 ,  H01L33/0079

摘要： A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves.

摘要翻译： 制造具有提高的产量和发射功率的半导体发光元件的方法使用激光剥离，并且包括以下步骤：在第一主表面上形成由第一半导体层，有源层和第二半导体层形成的半导体生长层 的生长底物; 在所述第二半导体层上形成多个接合电极，并且形成布置成格栅的引导槽，以围绕所述第二半导体层中的每个所述接合电极; 通过接合电极将支撑体和半导体生长层接合在一起; 投射激光以分离生长衬底; 将半导体生长层分割成用于半导体发光元件的各个元件区域; 并切割支撑体，从而分离成半导体发光元件。 去除区域包括形成引导槽的区域，由引导槽形成的第二半导体层的侧壁在引导槽的交叉处具有斜面形状。

公开(公告)号：US20110095330A1

公开(公告)日：2011-04-28

申请号：US12911022

申请日：2010-10-25

申请人： Tatsuma SAITO ,  Yusuke Yokobayashi

发明人： Tatsuma SAITO ,  Yusuke Yokobayashi

IPC分类号： H01L33/62 ,  H01L21/768

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support.

摘要翻译： 一种制造高品质光学半导体器件的方法包括：（a）制备生长衬底; （b）在生长衬底上形成半导体层; （c）通过电镀在所述半导体层上形成由铜制成的金属载体; （d）从半导体层分离生长衬底以除去生长衬底; 和（e）进行热处理，以便形成金属载体的铜中的晶粒和空隙的均匀密度分布。

公开(公告)号：US08338202B2

公开(公告)日：2012-12-25

申请号：US12407290

申请日：2009-03-19

申请人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

发明人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/2007 ,  H01L33/0079

摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.

摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。