摘要:
A film deposition method deposits a film on a surface of a substrate in strip form traveling on a peripheral surface of a cylindrical drum in at least one film deposition compartment around the peripheral surface of the drum. The method disposes previously a differential compartment between one film deposition compartment and a compartment including a wrapping space containing at least one of a first position at which the substrate starts to travel on the drum and a second position at which the substrate separates from the drum, the differential compartments communicating with the compartment including the wrapping space and the film deposition compartment, sets a first pressure of the wrapping space lower than a second pressure of the at least one film deposition compartment and performs film deposition in the film deposition compartment with electric power supplied to the drum.
摘要:
A cutting method and a cutting apparatus are provided which are capable of cutting a film without causing the cracking of a hard thin film or the deformation and/or property change of the layer beneath the hard thin film. The cutting apparatus includes: a conveying device that conveys a layered film including a base material and an inorganic film being a surface layer harder than the base material; a laminating section that attaches a laminate film to a predetermined cutting position of the inorganic film of the traveling layered film; a cutting section that cuts the layered film to which the laminate film is attached along the predetermined cutting position from the side opposite to the laminate film together with the laminate film; and a detaching section that detaches the laminate film after the cutting from the layered film.
摘要:
A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing electrode spaced facing to a surface of the drum, and a feed gas supply section supplying a feed gas for forming a film into a gap between the drum and the film depositing electrode; and an exhaust unit that exhausts the gap between the drum and the film depositing electrode during film formation by the film depositing unit so as to forcibly discharge the feed gas, supplied into the gap by the feed gas supply section, through at least one of end portions of the gap upstream side and downstream side in a rotating direction of the drum uniformly over an entire region of the gap in a direction parallel to the axis of rotation of the drum.
摘要:
The method of manufacturing a gas barrier film feeds long lengths of a substrate and forms a silicon nitride film as the gas barrier film on the substrate by a capacitively coupled plasma-enhanced CVD technique while transporting the substrate in a longitudinal direction. Gaseous raw materials using in the forming step of the silicon nitride film includes at least silane gas and ammonia gas, and a ratio P/Q [W/sccm] is not less than 1 when a flow rate of the silane gas is denoted as Q [sccm] and a power input for generating a capacitively coupled plasma is denoted as P [W], a tension applied to the substrate transported between two transporting elements is not more than 100 [N/m], and a pair of electrodes for at least forming the silicon nitride film on the substrate is interposed between the two transporting elements.
摘要:
A transfer apparatus comprises: a master carrier on which a minute concave-convex shape is formed; a slave medium to which the concave-convex shape or transfer information expressed by the concave-convex shape is to be transferred; and a holder which holds the slave medium and to which the master carrier is fixed. In the transfer apparatus, the positioning of the master carrier and the slave medium is precisely performed, and the work for supplying the master carrier may be simplified. As a result, it is possible to perform the transfer operation with high efficiency and excellent productivity.
摘要:
The method of depositing a gas barrier layer includes supplying a gas material including silane gas and ammonia gas as and a discharge gas including nitrogen gas as and depositing a silicon nitride film on a substrate using capacitively coupled chemical vapor deposition to form the gas barrier layer on the substrate. A ratio P/Q of RF power P (W) required to form the silicon nitride film to a total gas flow rate Q (sccm) of the silane gas, the ammonia gas and the nitrogen gas is in a range of from 0.4 to 40. The gas barrier film includes the gas barrier layer deposited by the gas barrier layer deposition method. The organic EL device includes the gas barrier film that serves as a sealing film.
摘要:
The present invention dries an ink absorption layer using a drying apparatus after applying an ink absorption layer application liquid containing inorganic particles and water-soluble resin to a continuously running web and thereby reduces a drying speed distribution in the width direction of the ink absorption layer to 20% or less.
摘要:
A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing electrode spaced facing to a surface of the drum, and a feed gas supply section supplying a feed gas for forming a film into a gap between the drum and the film depositing electrode; and an exhaust unit that exhausts the gap between the drum and the film depositing electrode during film formation by the film depositing unit so as to forcibly discharge the feed gas, supplied into the gap by the feed gas supply section, through at least one of end portions of the gap upstream side and downstream side in a rotating direction of the drum uniformly over an entire region of the gap in a direction parallel to the axis of rotation of the drum.
摘要:
A film depositing apparatus comprises: a transport unit that transports a substrate along a predetermined transport path; a first film deposition compartment that is provided with a first film depositing unit for forming an organic layer on a surface of the substrate; a second film deposition compartment that is disposed downstream of the first film deposition compartment in the transport path and which is provided with a second film depositing unit for forming an inorganic layer on top of the organic layer; and an evacuating unit that reduces the pressures within the first film deposition compartment and the second film deposition compartment.
摘要:
According to the present invention, since the applied magnetic field strength is controlled so as to fall between maximum magnetic field strength×0.7 and the maximum magnetic field strength over almost an entire surface of the magnetic recording medium, there is not much variation in the strength of the applied magnetic field relative to media coercivity during DC demagnetization, which makes it possible to obtain uniform magnetization over almost the entire surface.