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    Transparent conductive film and touch panel
    3.
    发明授权
    Transparent conductive film and touch panel 有权

    公开(公告)号：US09914810B2

    公开(公告)日：2018-03-13

    申请号：US13421931

    申请日：2012-03-16

    申请人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    发明人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    IPC分类号： B32B3/00 ,  B32B5/16 ,  B32B27/06 ,  C08J7/04

    CPC分类号： C08J7/045 ,  C08J7/047 ,  C08J2367/02 ,  C08J2433/00 ,  Y10T428/24405

    摘要： A transparent conductive film having a transparent polymer substrate and a transparent conductive layer on one main surface of the transparent polymer substrate. A cured resin layer with surface irregularities is formed: at least one of: between the transparent polymer substrate and the transparent conductive layer; and on the main surface opposite to the surface with the transparent conductive layer formed thereon of the transparent polymer substrate. The cured resin layer is preferably 1 μm or more and 3 μm or less in thickness and preferably contains a resin composition containing at least two components that undergo phase separation based on a difference in physical properties and 0.01 to 5 parts by weight of fine particles to 100 parts by weight of the solid content of the resin composition. The particle size of the fine particles is preferably 25 to 80% of the thickness of the cured resin layer.

    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers
    5.
    发明授权
    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers 有权
    用于生产高电阻硅晶片的方法和用于制造外延晶片和SOI晶片的工艺

    公开(公告)号：US07803228B2

    公开(公告)日：2010-09-28

    申请号：US10576321

    申请日：2004-08-02

    申请人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    发明人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    IPC分类号： C30B15/14

    CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/322 ,  H01L21/76243

    摘要： By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

    摘要翻译： 通过使用通过CZ方法获得的含氧硅晶片，并且通过将包括受控加热操作（斜面）的第一热处理与包括高温热处理和中温热处理的第二热处理组合， 制造根据本发明的高电阻硅晶片，可以获得能够在器件制造过程中即使在热处理之后也能够保持高电阻的高电阻硅晶片，同时有效地抑制氧供体的形成并防止 电阻率。 此外，可以使用这些高电阻硅晶片来制造优异的外延晶片和SOI晶片，因此可以应用于包括高频通信装置和模拟/数字混合装置等的广泛领域。

    OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY APPARATUS
    6.
    发明申请
    OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY APPARATUS 审中-公开
    光学膜，偏光板和图像显示装置

    公开(公告)号：US20100182690A1

    公开(公告)日：2010-07-22

    申请号：US12668285

    申请日：2008-05-20

    申请人： Hiroyuki Takao ,  Tsutomu Hani

    发明人： Hiroyuki Takao ,  Tsutomu Hani

    IPC分类号： G02B1/08 ,  C08K5/315 ,  C08K5/3472 ,  C08K5/3492

    CPC分类号： G02B5/223 ,  C08J5/18 ,  C08J2333/06 ,  G02B5/208 ,  G02B5/305

    摘要： Provided are an optical film which has excellent heat resistance and excellent optical transparency as well as an excellent UV-absorbing ability even in the wavelength range of 200 to 350 nm, and which is free of any defect in terms of its external appearance, a polarizing plate having a few external appearance defects and using the optical film, and an image display apparatus of high quality using the polarizing plate. The optical film of the present invention is obtained through extrusion molding of a molding material containing resin components containing a (meth)acrylic resin as a main component and 0.35 to 3.0 parts by weight of a cyanoacrylate-based UV absorber with respect to 100 parts by weight of the resin components.

    摘要翻译： 提供了一种光学膜，其具有优异的耐热性和优异的光学透明性，并且即使在200至350nm的波长范围内也具有优异的UV吸收能力，并且其在外观方面没有任何缺陷，偏光 具有少量外观缺陷并使用该光学膜的板以及使用该偏振片的高质量的图像显示装置。 本发明的光学膜是通过挤出成型含有（甲基）丙烯酸树脂作为主要成分的树脂成分和0.35〜3.0重量份的氰基丙烯酸酯系UV吸收剂的成型材料相对于100份的 重量的树脂组分。

    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended)
    7.
    发明申请
    Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended) 有权
    用于生产高电阻硅晶片的方法和用于生产外延晶片和硅晶片的工艺（经修改）

    公开(公告)号：US20070066033A1

    公开(公告)日：2007-03-22

    申请号：US10576321

    申请日：2004-08-02

    申请人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    发明人： Kazunari Kurita ,  Shinsuke Sadamitsu ,  Hiroyuki Takao ,  Masataka Hourai

    IPC分类号： H01L21/322

    CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/322 ,  H01L21/76243

    摘要： By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

    摘要翻译： 通过使用通过CZ方法获得的含氧硅晶片，并且通过将包括受控加热操作（斜面）的第一热处理与包括高温热处理和中温热处理的第二热处理组合， 制造根据本发明的高电阻硅晶片，可以获得能够在器件制造过程中即使在热处理之后也能够保持高电阻的高电阻硅晶片，同时有效地抑制氧供体的形成并防止 电阻率。 此外，可以使用这些高电阻硅晶片来制造优异的外延晶片和SOI晶片，因此可以应用于包括高频通信装置和模拟/数字混合装置等的广泛领域。

    Piercing apparatus
    8.
    发明授权
    Piercing apparatus 失效
    穿刺装置

    公开(公告)号：US06601655B1

    公开(公告)日：2003-08-05

    申请号：US09567640

    申请日：2000-05-09

    申请人： Manabu Gotou ,  Keisuke Morimitsu ,  Hiromi Kawakami ,  Tuneo Iwasaki ,  Kazuo Haga ,  Yoshiichi Yatagai ,  Manpei Hontani ,  Hiroyuki Takao

    发明人： Manabu Gotou ,  Keisuke Morimitsu ,  Hiromi Kawakami ,  Tuneo Iwasaki ,  Kazuo Haga ,  Yoshiichi Yatagai ,  Manpei Hontani ,  Hiroyuki Takao

    IPC分类号： B25D918

    CPC分类号： F27D3/1527 ,  B25D9/145 ,  C21B7/12

    摘要： A piercing apparatus compact in size having a decreased number of hoses is suited for use as an iron runner port-opening machine for a blast furnace or the like furnace in an iron mill. The piercing apparatus executes the piercing by moving back and forth, by using a feed unit, a drifter equipped with a forward-blowing unit, a reverse-blowing unit and a rotary unit, and wherein cylinders containing a cylindrical blowing piston are provided in front of, and at the back of, a drifter body maintaining a distance relative to each other; a shank rod having, formed as a unitary structure, a blowing portion of a large diameter with blowing surfaces formed on the front and rear portions thereof and rod-like small-diameter portions protruding forward and backward beyond the blowing portion, is provided along the axial direction of the drifter body in a manner that the blowing portion is positioned between the front cylinder and rear cylinder and that the small-diameter portions on both sides are fitted to the cylindrical blowing pistons of the respective sides; and valves are provided in the outer peripheral portions of the front and rear cylinders to supply hydraulic pressure into the cylinders.

    摘要翻译： 具有减少数量的软管的紧凑的穿孔装置适合用作铁磨机中的高炉或类似炉的铁流道开口机。 穿刺装置通过使用进给单元，配备有前吹单元，反吹单元和旋转单元的漂流器来前后移动来执行穿孔，并且其中包含圆柱形吹出活塞的气缸设置在前面 一个相对于彼此保持距离的漂浮体的背面和背面; 具有形成为整体结构的杆杆，其具有形成在其前部和后部上的吹制表面的大直径吹塑部分和沿着吹塑部分向前和向后突出的杆状小直径部分沿着 以使吹风部位于前气缸和后气缸之间并且两侧的小直径部分嵌合到各侧的圆筒形吹出活塞的方式，使得漂流体的轴向方向; 并且在前缸和后气缸的外周部分设置有阀，以将液压供应到气缸中。

    TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL
    9.
    发明申请
    TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL 有权
    透明导电膜和触控面板

    公开(公告)号：US20120237729A1

    公开(公告)日：2012-09-20

    申请号：US13421931

    申请日：2012-03-16

    申请人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    发明人： Hiroki Ozawa ,  Hiroyuki Takao ,  Minoru Kanatani ,  Wataru Nagatake

    IPC分类号： B32B3/02 ,  B32B27/06

    CPC分类号： C08J7/045 ,  C08J7/047 ,  C08J2367/02 ,  C08J2433/00 ,  Y10T428/24405

    摘要： A transparent conductive film having a transparent polymer substrate and a transparent conductive layer on one main surface of the transparent polymer substrate. A cured resin layer with surface irregularities is formed: at least one of: between the transparent polymer substrate and the transparent conductive layer; and on the main surface opposite to the surface with the transparent conductive layer formed thereon of the transparent polymer substrate. The cured resin layer is preferably 1 μm or more and 3 μm or less in thickness and preferably contains a resin composition containing at least two components that undergo phase separation based on a difference in physical properties and 0.01 to 5 parts by weight of fine particles to 100 parts by weight of the solid content of the resin composition. The particle size of the fine particles is preferably 25 to 80% of the thickness of the cured resin layer.

    摘要翻译： 在透明聚合物基材的一个主表面上具有透明聚合物基材和透明导电层的透明导电膜。 形成具有表面不规则性的固化树脂层：在透明聚合物基板和透明导电层之间的至少一个; 并且在与透明聚合物基板上形成有透明导电层的表面相对的主表面上。 固化树脂层的厚度优选为1μm以上且3μm以下，优选含有基于物理性能差异而进行相分​​离的至少2种成分的树脂组合物和0.01〜5重量份的微粒〜 100重量份树脂组合物的固体含量。 微粒的粒径优选为固化树脂层的厚度的25〜80％。

    Hard-coated antiglare film, polarizing plate, and image display
    10.
    发明授权
    Hard-coated antiglare film, polarizing plate, and image display 有权
    硬涂防眩膜，偏光板和图像显示

    公开(公告)号：US07604358B2

    公开(公告)日：2009-10-20

    申请号：US11748199

    申请日：2007-05-14

    申请人： Masaki Ninomiya ,  Seiichi Kusumoto ,  Daisuke Hamamoto ,  Hiroyuki Takao ,  Takayuki Shigematsu

    发明人： Masaki Ninomiya ,  Seiichi Kusumoto ,  Daisuke Hamamoto ,  Hiroyuki Takao ,  Takayuki Shigematsu

    IPC分类号： G02B27/00

    CPC分类号： G02B1/111 ,  G02B1/105 ,  G02B1/113 ,  G02B1/14 ,  G02B5/0221 ,  G02B5/0242 ,  G02B5/0278 ,  G02B5/0294

    摘要： A hard-coated antiglare film that has excellent antiglare properties, prevents a glare phenomenon from occurring, and prevents white blur from occurring to have excellent display contrast in bright light. The hard-coated antiglare film includes a transparent plastic film substrate and a hard-coating antiglare layer containing fine particles. The hard-coating antiglare layer is formed on at least one surface of the transparent plastic film substrate. The hard-coating antiglare layer has a surface with an uneven structure. The hard-coated antiglare film has a total haze value ht in the range of 40 to 70%. The relationship between the total haze value ht and an inner haze value hi obtained due to scattering inside the hard-coating antiglare layer is a relationship of the total haze value ht≦the inner haze value hi.

    摘要翻译： 具有优异的防眩性的硬涂防眩膜防止发生眩光现象，并且防止在亮光下具有优异的显示对比度的白色模糊。 硬涂层防眩膜包括透明塑料膜基材和含有微粒的硬涂层防眩层。 硬涂层防眩层形成在透明塑料膜基材的至少一个表面上。 硬涂层防眩层具有不均匀结构的表面。 硬涂层防眩膜的总浊度值ht在40-70％的范围内。 由于散射在硬涂层防眩层内的总雾度值ht与内部雾度值之间的关系是总雾度值ht <=内部浊度值hi的关系。