Surface mounting type antenna system
    1.
    发明授权
    Surface mounting type antenna system 失效
    表面安装型天线系统

    公开(公告)号:US5818398A

    公开(公告)日:1998-10-06

    申请号:US823828

    申请日:1997-03-25

    IPC分类号: H01Q1/36 H01Q11/08 H01Q1/24

    CPC分类号: H01Q1/362 H01Q11/08

    摘要: A surface mounting type antenna system 10 is formed by spirally winding a conductor 14 made of copper or copper alloy, with a power supply member 12 provided at one end of the conductor 14, the other end thereof being a free end 13, on the edge faces of a rectangular parallelepiped as a dielectric substrate 11 by printing, deposition, pasting or plating. The dielectric substrate 11 is prepared by stacking a plurality of layers of ceramics, resin or a combination of ceramics and resin. On the underside 111 of the dielectric substrate 11 lies a power supply terminal 15 to which the power supply member 12 of the conductor 14 is connected. The power supply terminal 15 is simultaneously used as a fixing terminal for securing the surface mounting type antenna system 10 to, for example, a mounting board. Moreover, the conductor 14 squarely intersecting the axis C of the conductor winding is rectangular in transverse cross section having a width of w and a length of l.

    摘要翻译: 表面安装型天线系统10通过螺旋地缠绕由铜或铜合金制成的导体14而形成,电源构件12设置在导体14的一端,另一端为自由端13,在边缘 通过印刷,沉积,糊化或电镀作为电介质基板11的长方体的表面。 电介质基板11通过层叠多层陶瓷,树脂或陶瓷和树脂的组合来制备。 电介质基板11的下侧111位于与导体14的电源部件12连接的电源端子15上。 电源端子15同时用作用于将表面安装型天线系统10固定到例如安装板的固定端子。 此外,与导体绕组的轴线C正交地交叉的导体14在宽度为w且长度为l的横截面中为矩形。

    Thermistor having a positive temperature coefficient of resistance
    2.
    发明授权
    Thermistor having a positive temperature coefficient of resistance 失效
    具有正温度系数的热敏电阻

    公开(公告)号:US4766409A

    公开(公告)日:1988-08-23

    申请号:US801679

    申请日:1985-11-25

    申请人: Haruhumi Mandai

    发明人: Haruhumi Mandai

    IPC分类号: H01C1/14 H01C7/02 H01C7/10

    摘要: A thermistor which includes a ceramic sintered body formed of a plurality of inner electrodes alternating with a corresponding plurality of ceramic layers, outer electrodes being connected to specific ones of the inner electrodes. Each ceramic layer a positive temperature coefficient of resistance. The inner electrode layers are obtained by injecting molten base metal having a low melting point such as lead, tin or lead-tin alloy into gap layers previously defined in the sintered body between the laminated ceramic layers from the outside under pressure and hardening the same.

    摘要翻译: 一种热敏电阻,其包括由与相应的多个陶瓷层交替的多个内部电极形成的陶瓷烧结体,外部电极与特定的内部电极连接。 每个陶瓷层的正温度系数为电阻。 内部电极层通过在压力下从外部将层状陶瓷层中预先限定在烧结体中的熔融基底金属如铅,锡或铅锡合金注入到熔融基底中而获得,并将其硬化。

    Non-linear electrical resistor having varistor characteristics
    3.
    发明授权
    Non-linear electrical resistor having varistor characteristics 失效
    具有变阻器特性的非线性电阻器

    公开(公告)号:US4612140A

    公开(公告)日:1986-09-16

    申请号:US597359

    申请日:1984-04-06

    CPC分类号: H01C7/115 C04B35/47

    摘要: A ceramic composition for use in production of non-linear resistors. This composition comprises strontium titanate (or a mixture containing strontium titanate as a major ingredient) and 0.1 to 1.0 mol % of Er.sub.2 O.sub.3, Ho.sub.2 O.sub.3 or mixtures thereof. In a preferred composition 0.02 to 0.2 mol % of at least one of MnO.sub.2, Co.sub.2 O.sub.3 or mixtures thereof are included. Non-linear resistors produced using the composition are comparable to those produced from conventional ceramic compositions in the threshold level voltage and non-linear factor but have greatly improved flexural strength.

    摘要翻译: 用于生产非线性电阻器的陶瓷组合物。 该组合物包含钛酸锶(或以钛酸锶为主要成分的混合物)和0.1〜1.0摩尔%的Er2O3,Ho2O3或其混合物。 在优选的组合物中,包括0.02〜0.2摩尔%的MnO 2,Co 2 O 3或其混合物中的至少一种。 使用该组合物制造的非线性电阻器与在阈值电压和非线性因子中由常规陶瓷组合物制造的非线性电阻器相当,但是具有大大提高的弯曲强度。

    Method for producing boundary layer semiconductor ceramic capacitors
    6.
    发明授权
    Method for producing boundary layer semiconductor ceramic capacitors 失效
    边界层半导体陶瓷电容器的制造方法

    公开(公告)号:US4380559A

    公开(公告)日:1983-04-19

    申请号:US190711

    申请日:1980-09-25

    IPC分类号: H01G4/12 H01G4/10

    CPC分类号: H01G4/1281

    摘要: A method for producing boundary layer semiconductor ceramic capacitors comprises firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere, heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics, and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies and is characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with power of an insulatorizing agent with stirring in a neutral or oxidizing atmosphere at a temperature ranging from 950.degree. to 1300.degree. C. As a semiconductor ceramic material, there may be used semiconductor ceramics of a barium titanate system, or of a strontium titanate system, or a complex semiconductor ceramic mainly comprising barium titanate or calcium titanate and strontium titanate. This method enables one to produce boundary layer semiconductor ceramics as good quality with small standard deviation and high yield.

    摘要翻译: 制造边界层半导体陶瓷电容器的方法包括在中性或还原性气氛中烧成半导体陶瓷材料的成形体,热处理所得到的半导体陶瓷体,使半导体陶瓷的晶界绝缘,并且在 所述热处理半导体陶瓷体的特征在于,所述热处理是通过在中性或氧化性气氛中在950〜1300℃的温度下搅拌将半导体陶瓷体与绝缘体的功率一起加热而进行的 C.作为半导体陶瓷材料,可以使用钛酸钡体系或钛酸锶系的半导体陶瓷,或主要包含钛酸钡或钛酸钙和钛酸锶的复合半导体陶瓷。 这种方法使得能够以小的标准偏差和高产率生产边界层半导体陶瓷,质量好。