LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCTION METHOD THEREOF
    1.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号:US20100020278A1

    公开(公告)日:2010-01-28

    申请号:US12529449

    申请日:2007-11-15

    IPC分类号: G02F1/1335 G02F1/13

    摘要: The present invention provides a semi-transmissive liquid crystal display device that can suppress flicker by adjusting an optimum value of a direct-current offset voltage that is applied to offset a bias electric field generated inside liquid crystal without increasing the number of production steps, and also provides a preferable production method of the semi-transmissive liquid crystal display device. The liquid crystal display device of the present invention is a semi-transmissive liquid crystal display device including: a substrate on aback face side, including a transmissive electrode and a reflective electrode; a substrate on an observation face side, facing the substrate on the back face side; and a liquid crystal layer arranged between the substrate on the back face side and the substrate on the observation face side, wherein the reflective electrode has a molybdenum-containing surface on a side of the liquid crystal layer.

    摘要翻译: 本发明提供一种半透射型液晶显示装置,其可以通过调整用于偏移液晶内部产生的偏置电场的直流偏移电压的最佳值来抑制闪烁,而不增加制造步骤的数量, 还提供了半透射型液晶显示装置的优选制造方法。 本发明的液晶显示装置是一种半透射型液晶显示装置,包括:具有透射电极和反射电极的正面侧的基板; 观察面侧的基板,与背面侧的基板相对; 以及布置在背面侧的基板和观察面侧的基板之间的液晶层,其中,反射电极在液晶层的一侧具有含钼表面。

    Metal material and its manufacturing method, thin-film device and its manufacturing method, element-side substrate and its manufacturing method, and liquid crystal display and its manufacturing method
    2.
    发明授权
    Metal material and its manufacturing method, thin-film device and its manufacturing method, element-side substrate and its manufacturing method, and liquid crystal display and its manufacturing method 失效
    金属材料及其制造方法,薄膜器件及其制造方法,元件侧基板及其制造方法以及液晶显示器及其制造方法

    公开(公告)号:US08125595B2

    公开(公告)日:2012-02-28

    申请号:US11908043

    申请日:2006-02-23

    IPC分类号: G02F1/1343

    摘要: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses. Even if the optimum direct current offset voltage is applied to one of the reflective electrode 62 and the transmissive electrode 63, it is possible to reduce the deterioration of an image display quality resulting from the difference with the optimum direct current offset voltage for the other electrode. As such, it is possible to improve the display quality of the liquid crystal display apparatus 1.

    摘要翻译: 抑制不同的金属薄膜的功函数差,而不会导致制造步骤的增加或光学性能的降低。 在像素电极64中包括反射电极62和透射电极63的半透射反射型液晶显示装置1中,对反射电极62的表面进行等离子体处理,使得反射电极的功函数 62通过从原始值改变0.1eV的值来控制。 因此,可以将反射电极62的功函数相对于透射电极63的功函数设定在±0.2eV的差值内。结果,制造步骤的数量不增加或没有光学 与传统的液晶显示装置不同,性能下降。 即使将最佳的直流偏移电压施加到反射电极62和透射电极63中的一个,也可以减少由与另一个电极的最佳直流偏移电压的差异导致的图像显示质量的劣化 。 因此,可以提高液晶显示装置1的显示质量。

    METAL MATERIAL AND ITS MANUFACTURING METHOD, THIN-FILM DEVICE AND ITS MANUFACTURING METHOD, ELEMENT-SIDE SUBSTRATE AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY AND ITS MANUFACTURING METHOD
    3.
    发明申请
    METAL MATERIAL AND ITS MANUFACTURING METHOD, THIN-FILM DEVICE AND ITS MANUFACTURING METHOD, ELEMENT-SIDE SUBSTRATE AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY AND ITS MANUFACTURING METHOD 失效
    金属材料及其制造方法,薄膜装置及其制造方法,元件基板及其制造方法和液晶显示及其制造方法

    公开(公告)号:US20100033670A1

    公开(公告)日:2010-02-11

    申请号:US11908043

    申请日:2006-02-23

    摘要: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses. Even if the optimum direct current offset voltage is applied to one of the reflective electrode 62 and the transmissive electrode 63, it is possible to reduce the deterioration of an image display quality resulting from the difference with the optimum direct current offset voltage for the other electrode. As such, it is possible to improve the display quality of the liquid crystal display apparatus 1.

    摘要翻译: 抑制不同的金属薄膜的功函数差,而不会导致制造步骤的增加或光学性能的降低。 在像素电极64中包括反射电极62和透射电极63的半透射反射型液晶显示装置1中,对反射电极62的表面进行等离子体处理,使得反射电极的功函数 62通过从原始值改变0.1eV的值来控制。 因此,可以将反射电极62的功函数相对于透射电极63的功函数设定在±0.2eV的差值内。结果,制造步骤的数量不增加或没有光学 与传统的液晶显示装置不同,性能下降。 即使将最佳的直流偏移电压施加到反射电极62和透射电极63中的一个,也可以减少由与另一个电极的最佳直流偏移电压的差异导致的图像显示质量的劣化 。 因此,可以提高液晶显示装置1的显示质量。

    Semi-transmissive liquid crystal display device and manufacturing method thereof
    4.
    发明授权
    Semi-transmissive liquid crystal display device and manufacturing method thereof 有权
    半透射型液晶显示装置及其制造方法

    公开(公告)号:US07961280B2

    公开(公告)日:2011-06-14

    申请号:US12279262

    申请日:2007-01-09

    IPC分类号: G02F1/1335

    摘要: In a semi-transmissive liquid crystal display device (50a) including an active matrix substrate (20a), the active matrix substrate (20a) includes a plurality of source lines (2), a first transparent electrode (2c) connected to each source line (2) through a TFT (5), an interlayer insulating film (12) provided on the first transparent electrode (2c) and having an opening (12a), a reflective electrode (6) provided on the interlayer insulating film (12) and connected to the first transparent electrode (2c) through the opening (12a), and a second transparent electrode (7a) overlapping the reflective electrode (6a) and the first transparent electrode (2c) and connected to the reflective electrode (6a) and the first transparent electrode (2c). In each pixel, respective outer peripheral ends (E) of the reflective electrode (6a) and the second transparent electrode (7a) are aligned with each other.

    摘要翻译: 在包括有源矩阵基板(20a)的半透射型液晶显示装置(50a)中,有源矩阵基板(20a)包括多个源极线(2),与各个源极线连接的第一透明电极 (2)通过TFT(5),设置在第一透明电极(2c)上并具有开口(12a)的层间绝缘膜(12),设置在层间绝缘膜(12)上的反射电极(6) 通过开口12a连接到第一透明电极2c,和与反射电极6a和第一透明电极2c重叠并与反射电极6a连接的第二透明电极7a, 第一透明电极(2c)。 在每个像素中,反射电极(6a)和第二透明电极(7a)的各个外周端(E)彼此对准。

    SEMI-TRANSMISSIVE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMI-TRANSMISSIVE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半透明液晶显示装置及其制造方法

    公开(公告)号:US20090219473A1

    公开(公告)日:2009-09-03

    申请号:US12279262

    申请日:2007-01-09

    IPC分类号: G02F1/1335 G02F1/13

    摘要: In a semi-transmissive liquid crystal display device (50a) including an active matrix substrate (20a), the active matrix substrate (20a) includes a plurality of source lines (2), a first transparent electrode (2c) connected to each source line (2) through a TFT (5), an interlayer insulating film (12) provided on the first transparent electrode (2c) and having an opening (12a), a reflective electrode (6) provided on the interlayer insulating film (12) and connected to the first transparent electrode (2c) through the opening (12a), and a second transparent electrode (7a) overlapping the reflective electrode (6a) and the first transparent electrode (2c) and connected to the reflective electrode (6a) and the first transparent electrode (2c). In each pixel, respective outer peripheral ends (E) of the reflective electrode (6a) and the second transparent electrode (7a) are aligned with each other.

    摘要翻译: 在包括有源矩阵基板(20a)的半透射型液晶显示装置(50a)中,有源矩阵基板(20a)包括多个源极线(2),与各个源极线连接的第一透明电极 (2)通过TFT(5),设置在第一透明电极(2c)上并具有开口(12a)的层间绝缘膜(12),设置在层间绝缘膜(12)上的反射电极(6) 通过开口12a连接到第一透明电极2c,和与反射电极6a和第一透明电极2c重叠并与反射电极6a连接的第二透明电极7a, 第一透明电极(2c)。 在每个像素中,反射电极(6a)和第二透明电极(7a)的各个外周端(E)彼此对准。

    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
    6.
    发明申请
    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20130171771A1

    公开(公告)日:2013-07-04

    申请号:US13823247

    申请日:2011-09-09

    IPC分类号: H01L29/66

    摘要: A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.

    摘要翻译: 根据本发明的半导体器件的制造方法包括溅射靶(100A)的步骤。 目标(100A)包括位于同时具有间隙的多个目标瓦片(11A) 用于支撑所述多个目标瓦片(11A)的背板(15A); 以及设置在背板(15A)和多个目标瓦片(11A)之间的接合构件(17A)。 多个目标瓦片(11A)各自包含In,Ga和Zn。 当从多个目标瓦片(11A)所在的一侧沿与其垂直的方向看目标(100A)时,多个目标瓦片(11A)均小于绝缘基板(1),并且 接合部件(17A)不能通过间隙看到。

    DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
    7.
    发明申请
    DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
    显示装置及其制造方法

    公开(公告)号:US20120307173A1

    公开(公告)日:2012-12-06

    申请号:US13578371

    申请日:2011-02-16

    IPC分类号: H01L33/36 G02F1/136

    摘要: A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.

    摘要翻译: 一种显示装置的制造方法,其特征在于,具有以下步骤:依次层叠第一导电膜和第二导电膜的多层结构,除去第二导电膜的一部分,形成第一导电膜 不与第二导电膜重叠,由此从多层结构形成电极部分,在其上形成有电极部分的基板上形成由感光材料制成的平坦化膜以覆盖电极部分,从而形成接触孔 在平坦化膜的表面上形成像素电极,以覆盖位于接触孔内部的第一导电膜的一部分,并从平坦化膜露出。

    Manufacturing method for semiconductor device
    8.
    发明授权
    Manufacturing method for semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US08753921B2

    公开(公告)日:2014-06-17

    申请号:US13823247

    申请日:2011-09-09

    摘要: A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.

    摘要翻译: 根据本发明的半导体器件的制造方法包括溅射靶(100A)的步骤。 目标(100A)包括位于同时具有间隙的多个目标瓦片(11A) 用于支撑所述多个目标瓦片(11A)的背板(15A); 以及设置在背板(15A)和多个目标瓦片(11A)之间的接合构件(17A)。 多个目标瓦片(11A)各自包含In,Ga和Zn。 当从多个目标瓦片(11A)所在的一侧沿着与其正交的方向看目标(100A)时,多个目标瓦片(11A)均小于绝缘基板(1),并且 接合部件(17A)不能通过间隙看到。

    Active matrix substrate, method for manufacture of active matrix substrate, liquid crystal display device, and electronic apparatus
    9.
    发明授权
    Active matrix substrate, method for manufacture of active matrix substrate, liquid crystal display device, and electronic apparatus 有权
    有源矩阵基板,有源矩阵基板的制造方法,液晶显示装置以及电子装置

    公开(公告)号:US08237896B2

    公开(公告)日:2012-08-07

    申请号:US12445326

    申请日:2007-10-19

    IPC分类号: G02F1/1335

    摘要: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.

    摘要翻译: 本发明的有源矩阵基板(30)包括:(i)设置在绝缘基板(10)上的多个TFT元件(2),和(ii)电连接到多个TFT元件的像素电极(7) 2)。 像素电极(7)具有:(i)第一透明电极层(7a),(ii)层叠在第一透明电极层(7a)上的反射电极层(7b),该反射电极层(7b) 面积比第一透明电极层(7a)的面积高,以及(iii)层叠以至少覆盖反射电极层(7b)的第二透明电极层(7c)。 因此,可以实现抑制闪烁的发生的半透射型液晶显示装置,从而具有高的显示质量。

    ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURE OF ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND ELECTRONIC APPARATUS
    10.
    发明申请
    ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURE OF ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND ELECTRONIC APPARATUS 有权
    有源矩阵基板,主动矩阵基板,液晶显示装置和电子设备的制造方法

    公开(公告)号:US20100006842A1

    公开(公告)日:2010-01-14

    申请号:US12445326

    申请日:2007-10-19

    IPC分类号: H01L31/00 H01L33/00

    摘要: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.

    摘要翻译: 本发明的有源矩阵基板(30)包括:(i)设置在绝缘基板(10)上的多个TFT元件(2),和(ii)电连接到多个TFT元件的像素电极(7) 2)。 像素电极(7)具有:(i)第一透明电极层(7a),(ii)层叠在第一透明电极层(7a)上的反射电极层(7b),该反射电极层(7b) 面积比第一透明电极层(7a)的面积高,以及(iii)层叠以至少覆盖反射电极层(7b)的第二透明电极层(7c)。 因此,可以实现抑制闪烁的发生的半透射型液晶显示装置,从而具有高的显示质量。