摘要:
The present invention provides a semi-transmissive liquid crystal display device that can suppress flicker by adjusting an optimum value of a direct-current offset voltage that is applied to offset a bias electric field generated inside liquid crystal without increasing the number of production steps, and also provides a preferable production method of the semi-transmissive liquid crystal display device. The liquid crystal display device of the present invention is a semi-transmissive liquid crystal display device including: a substrate on aback face side, including a transmissive electrode and a reflective electrode; a substrate on an observation face side, facing the substrate on the back face side; and a liquid crystal layer arranged between the substrate on the back face side and the substrate on the observation face side, wherein the reflective electrode has a molybdenum-containing surface on a side of the liquid crystal layer.
摘要:
A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses. Even if the optimum direct current offset voltage is applied to one of the reflective electrode 62 and the transmissive electrode 63, it is possible to reduce the deterioration of an image display quality resulting from the difference with the optimum direct current offset voltage for the other electrode. As such, it is possible to improve the display quality of the liquid crystal display apparatus 1.
摘要:
A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses. Even if the optimum direct current offset voltage is applied to one of the reflective electrode 62 and the transmissive electrode 63, it is possible to reduce the deterioration of an image display quality resulting from the difference with the optimum direct current offset voltage for the other electrode. As such, it is possible to improve the display quality of the liquid crystal display apparatus 1.
摘要:
In a semi-transmissive liquid crystal display device (50a) including an active matrix substrate (20a), the active matrix substrate (20a) includes a plurality of source lines (2), a first transparent electrode (2c) connected to each source line (2) through a TFT (5), an interlayer insulating film (12) provided on the first transparent electrode (2c) and having an opening (12a), a reflective electrode (6) provided on the interlayer insulating film (12) and connected to the first transparent electrode (2c) through the opening (12a), and a second transparent electrode (7a) overlapping the reflective electrode (6a) and the first transparent electrode (2c) and connected to the reflective electrode (6a) and the first transparent electrode (2c). In each pixel, respective outer peripheral ends (E) of the reflective electrode (6a) and the second transparent electrode (7a) are aligned with each other.
摘要:
In a semi-transmissive liquid crystal display device (50a) including an active matrix substrate (20a), the active matrix substrate (20a) includes a plurality of source lines (2), a first transparent electrode (2c) connected to each source line (2) through a TFT (5), an interlayer insulating film (12) provided on the first transparent electrode (2c) and having an opening (12a), a reflective electrode (6) provided on the interlayer insulating film (12) and connected to the first transparent electrode (2c) through the opening (12a), and a second transparent electrode (7a) overlapping the reflective electrode (6a) and the first transparent electrode (2c) and connected to the reflective electrode (6a) and the first transparent electrode (2c). In each pixel, respective outer peripheral ends (E) of the reflective electrode (6a) and the second transparent electrode (7a) are aligned with each other.
摘要:
A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.
摘要:
A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.
摘要:
A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.
摘要:
An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.
摘要:
An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.