Temperature detecting apparatus, substrate processing apparatus and method of manufacturing semiconductor device
    1.
    发明授权
    Temperature detecting apparatus, substrate processing apparatus and method of manufacturing semiconductor device 有权
    温度检测装置,基板处理装置及半导体装置的制造方法

    公开(公告)号:US08822240B2

    公开(公告)日:2014-09-02

    申请号:US13536418

    申请日:2012-06-28

    摘要: A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod.

    摘要翻译: 提供一种温度检测装置,其能够抑制由于随时间的变化而导致的热电偶线的断开或热电偶接合部的位置偏离。 温度检测装置包括:安装成沿垂直方向延伸并且在垂直方向上包括通孔的绝缘杆; 插入所述绝缘棒的通孔中的热电偶线,所述热电偶线在其上端包括热电偶接合部分和所述绝缘棒的下端处的倾斜部分; 以及安装在所述绝缘杆下方的缓冲区,并且被构造成在热膨胀时抑制所述成角度部分的水平部分的限制,其中所述热电偶线的上部或所述垂直方向上的中间部分由所述绝缘杆支撑。

    Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
    2.
    发明授权
    Heating device, substrate processing apparatus, and method of manufacturing semiconductor device 有权
    加热装置,基板处理装置以及半导体装置的制造方法

    公开(公告)号:US09064912B2

    公开(公告)日:2015-06-23

    申请号:US12838831

    申请日:2010-07-19

    CPC分类号: H01L21/67109

    摘要: A heating device includes: a heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape, and a holding body receiving part an end of the valley part, where a width of the holding body receiving part is greater than that of the valley part; an insulating body installed at an outer circumference of the heating element with both ends of the heating element fixed thereto; and a staple pin penetrating the holding body receiving part and a neighboring holdings body receiving part to fix the heating element to the insulating body, where the staple pin is dislocated with respect to a center of the holding body receiving part and an amount of dislocation of the staple pin varies according to a distance between the holding body receiving part and the both ends.

    摘要翻译: 一种加热装置,包括:加热元件,其包括多个交替连接以形成曲折形状的山部和谷部;以及保持体容纳部,其中,所述保持体容纳部的宽度较大 比谷部分; 绝热体,其安装在所述加热元件的外周上,所述加热元件的两端固定在所述加热元件的外周; 以及穿过保持体接收部的钉销和相邻的保持体接收部,以将加热元件固定在绝缘体上,在该绝缘体处,钉销相对于保持体接收部的中心脱位, 钉销根据保持体接收部和两端之间的距离而变化。

    Heater supporting device
    3.
    发明授权

    公开(公告)号:US09779970B2

    公开(公告)日:2017-10-03

    申请号:US13101625

    申请日:2011-05-05

    IPC分类号: H01L21/22 H01L21/67

    CPC分类号: H01L21/67109

    摘要: A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

    Substrate processing apparatus capable of switching control mode of heater
    4.
    发明授权
    Substrate processing apparatus capable of switching control mode of heater 有权
    能够切换加热器的控制模式的基板处理装置

    公开(公告)号:US09418881B2

    公开(公告)日:2016-08-16

    申请号:US13192784

    申请日:2011-07-28

    摘要: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.

    摘要翻译: 提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。 基板处理装置包括加热装置,其构造成加热容纳基板的处理室; 第一温度检测装置,被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置,被配置为使用第二热电偶检测关于加热装置的温度; 控制单元,被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置,被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元,使得控制单元在第一控制模式和第二控制模式之间切换,其中耐热性 的第一热电偶的温度检测性能高于第一热电偶的温度检测性能。

    Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
    5.
    发明授权
    Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device 有权
    温度控制方法,热处理装置以及半导体装置的制造方法

    公开(公告)号:US06746908B2

    公开(公告)日:2004-06-08

    申请号:US09964863

    申请日:2001-09-28

    IPC分类号: H01L218238

    摘要: A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and which can be automated by using a computer. In the temperature control method of controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor, temperatures are detected at predetermined locations the number of which is larger than the number of the heating zones, and the heating apparatus is controlled in such a manner that the target temperature falls between a maximum value and a minimum value of a plurality of detected temperatures.

    摘要翻译: 提供一种温度控制方法,其能够对目标温度下热处理的所有晶片区域执行快速,准确和无错误的均热控制,而不需要任何熟练的操作者并且可以通过使用计算机自动化。 在控制具有至少两个加热区域的加热装置的温度控制方法中,使得在预定位置处检测的温度等于目标温度,在预定位置检测温度,其数量大于加热次数 区域,并且加热装置以使得目标温度落在多个检测温度的最大值和最小值之间的方式被控制。

    Temperature regulating method, thermal processing system and semiconductor device manufacturing method
    6.
    发明申请
    Temperature regulating method, thermal processing system and semiconductor device manufacturing method 有权
    温度调节方法,热处理系统和半导体器件制造方法

    公开(公告)号:US20090187268A1

    公开(公告)日:2009-07-23

    申请号:US12382545

    申请日:2009-03-18

    IPC分类号: H01L23/34 G06F17/00 G05D23/00

    摘要: A temperature regulating method in a thermal processing system has heating means for heating an interior of a process chamber to process a substrate, a heating control section for controlling the heating means, and first and second temperature detecting means for detecting a temperature in the process chamber. The first temperature detecting means is arranged in a position closer to the substrate than the second temperature detecting means while the second temperature detecting means is arranged in a position closer to the heating means than the first temperature detecting means. The temperature regulating method includes a first step of controlling the heating means by performing integral operation, differential operation and proportional operation by means of the heating control section in a manner a detection temperature by the temperature detecting means becomes a predetermined target temperature, a second step of determining a first output control pattern by patterning a first operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the first temperature detecting means, in controlling the heating means in the first step, a third step of controlling the heating means by means of the heating control section depending upon the first output control pattern determined in the second step, and a fourth step of determining a second output control pattern by patterning at least a part of a second operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the second temperature detecting means, in controlling the heating means in the third step.

    摘要翻译: 热处理系统中的温度调节方法具有用于加热处理室内部以加工基板的加热装置,用于控制加热装置的加热控制部分,以及用于检测处理室中的温度的第一和第二温度检测装置 。 第一温度检测装置布置在比第二温度检测装置更靠近基板的位置,而第二温度检测装置布置在比第一温度检测装置更靠近加热装置的位置。 温度调节方法包括:通过以由温度检测装置的检测温度变为预定目标温度的方式通过加热控制部进行积分操作,差动运算和比例操作来控制加热装置的第一步骤;第二步骤 通过对所述加热控制部的图案化第一操作量来确定第一输出控制图案,以根据由所述第一温度检测装置检测到的检测温度来控制加热装置,在第一步骤中控制加热装置,第三步骤 根据在第二步骤中确定的第一输出控制模式,通过加热控制部分控制加热装置;以及第四步骤,通过对加热控制的至少一部分第二操作量进行构图来确定第二输出控制模式 根据检测来控制加热装置 由第二温度检测装置检测的吸收温度,在第三步骤中控制加热装置。

    Temperature Adjustment Method
    7.
    发明申请
    Temperature Adjustment Method 有权
    温度调节方法

    公开(公告)号:US20090107978A1

    公开(公告)日:2009-04-30

    申请号:US12224436

    申请日:2007-03-05

    IPC分类号: F27D11/00

    CPC分类号: H01L21/324 H01L21/67248

    摘要: A temperature adjustment method is provided to improve operating efficiency and reduce costs. Control of a heating unit in a thermal processing system including a heating control section is performed based on a first output control pattern obtained by subjecting a detection temperature provided by a first temperature detecting unit to an integral operation, a differential operation, and a proportional operation under a condition of a first set of temperature-setting conditions, a second output control pattern obtained by determining a first heat quantity in a period from the start of an increase in temperature detected by a second temperature detecting unit until the temperature inside the processing chamber reaches a maximum temperature, and using a second heat quantity obtained by subtracting the part of the output provided by the proportional operation from the first heat quantity.

    摘要翻译: 提供温度调节方法以提高操作效率并降低成本。 基于通过对由第一温度检测单元提供的检测温度进行积分运算,差分运算和比例运算而获得的第一输​​出控制图案来执行包括加热控制部分的热处理系统中的加热单元的控制 在第一组温度设定条件的条件下,确定第二输出控制模式,该第二输出控制模式通过在从第二温度检测单元检测到的温度升高开始的时间段内确定第一热量直到处理室内的温度 达到最高温度,并且使用通过从第一热量减去由比例操作提供的输出的一部分而获得的第二热量。

    Substrate processing apparatus and substrate processing method
    9.
    发明申请
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US20060188240A1

    公开(公告)日:2006-08-24

    申请号:US10550202

    申请日:2004-06-18

    IPC分类号: F26B19/00

    摘要: It is an object of the invention to provide a substrate processing equipment that can predict a temperature of a substrate and easily control temperature of the substrate. Formed in a reactor (processing chamber) 3 are four temperature adjustment zones, of which setting and adjustment of temperature can be made by zone heaters 340-1 to 340-4. A temperature controller 4 mixes temperatures detected by inner thermocouples 302-1 to 302-4 and outer thermocouples 342-1 to 342-4 to calculate predicted temperatures of substrates by means of the first-order lag calculation on the basis of time constants of temperatures of substrates heated by the zone heaters 340-1 to 340-4. Also, the temperature controller 4 calculates electric power values (operating variables) for the zone heaters 340-1 to 340-4 with the use of predicted temperatures of substrates to output the same to the zone heaters 340-1 to 340-4.

    摘要翻译: 本发明的目的是提供一种能够预测基板的温度并容易地控制基板的温度的基板处理设备。 在反应器(处理室)3中形成的是四个温度调节区域,其中温度的设定和调节可以由区域加热器340-1至340-4进行。 温度控制器4将由内部热电偶302-1至302-4检测的温度与外部热电偶342-1至342-4混合,以基于温度的时间常数通过一阶滞后计算来计算衬底的预测温度 的区域加热器340-1至340-4加热的基底。 此外,温度控制器4使用基板的预测温度来计算区域加热器340-1至340-4的电功率值(操作变量),以将其输出到区域加热器340-1至340-4。

    Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member
    10.
    发明授权
    Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member 有权
    加热装置,采用该加热装置的基板处理装置,制造半导体装置的方法和延伸部件

    公开(公告)号:US08158911B2

    公开(公告)日:2012-04-17

    申请号:US12213825

    申请日:2008-06-25

    IPC分类号: F27B5/14 F26B19/00

    摘要: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

    摘要翻译: 一种加热装置,包括以片状形式设置的加热元件,并且具有设置在其中的凹口或通孔,由导电材料制成并被设置为围绕和限定加热空间的侧壁构件,以及设置在加热空间侧的保持构件 侧壁构件用于在一端保持加热元件。 另外,还设置有延伸部件,每个部件包括一个延伸部分,该延伸部分布置成从侧壁部件的加热空间侧突出,并且延伸穿过加热元件中的凹口或两端之间的通孔,以及突出部分 所述加热元件的两个前后两侧沿着与所述延伸部分的延伸方向正交的方向从所述延伸部分延伸,从而抑制所述加热元件沿所述延伸方向的位移。