公开(公告)号：US09418881B2

公开(公告)日：2016-08-16

申请号：US13192784

申请日：2011-07-28

申请人： Shinobu Sugiura ,  Masaaki Ueno ,  Kazuo Tanaka ,  Masashi Sugishita ,  Hideto Yamaguchi ,  Kenji Shirako

发明人： Shinobu Sugiura ,  Masaaki Ueno ,  Kazuo Tanaka ,  Masashi Sugishita ,  Hideto Yamaguchi ,  Kenji Shirako

IPC分类号： H01L21/67 ,  G05D23/19 ,  G05D23/20 ,  C23C14/54 ,  C23C16/458 ,  C23C16/52 ,  G05D23/22

CPC分类号： H01L21/67248 ,  C23C14/541 ,  C23C16/4584 ,  C23C16/52 ,  G05D23/1931 ,  G05D23/22 ,  H01L21/67109

摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.

摘要翻译： 提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。 基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性 的第一热电偶的温度检测性能高于第一热电偶的温度检测性能。

公开(公告)号：US09222732B2

公开(公告)日：2015-12-29

申请号：US13229543

申请日：2011-09-09

申请人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

发明人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

IPC分类号： H05B6/00 ,  H05B6/22 ,  F28F1/00 ,  C23C16/44 ,  C23C16/458 ,  C30B25/02 ,  C30B29/36 ,  F28F3/08 ,  H01L21/67 ,  H05B6/02 ,  H05B6/10 ,  F28F21/02

CPC分类号： F28F1/00 ,  C23C16/44 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/36 ,  F28F3/086 ,  F28F21/02 ,  H01L21/67109 ,  H05B6/02 ,  H05B6/105

摘要： Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.

摘要翻译： 提供一种能够将炉口部的温度保持在构成炉部的各构件的耐热温度以下的基板处理装置。 基板处理装置包括：处理室，被配置为处理以预定间隔垂直堆叠的多个基板; 衬底保持器，其构造成将所述多个衬底保持在所述处理室中; 以及第一热交换器，其安装在所述处理室中，以从所述基板保持器的下部支撑所述基板保持器，并且被配置为与所述处理室中的所述基板保持器的侧面沿着向下的方向流动的气体进行热交换 其特征在于，所述第一热交换器具有向下方延伸的中空圆柱形绝缘管和安装在所述绝缘管中的绝缘板，绝缘板的上下绝缘体的区域彼此空间连接。

公开(公告)号：US09084298B2

公开(公告)日：2015-07-14

申请号：US13034035

申请日：2011-02-24

申请人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

发明人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

IPC分类号： H05B6/10 ,  H05B6/02

CPC分类号： H05B6/108

摘要： There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

摘要翻译： 提供了能够抑制基板的加工过程中的磁场泄漏的基板处理装置。 本发明的基板处理装置包括：反应管，其具有设置在其中的处理室，用于处理基板; 感应加热单元，其安装在所述反应管的外部以容纳所述反应管，其中所述感应加热单元被构造成通过产生磁场对所述处理室进行电磁感应加热; 安装在所述感应加热单元外部以容纳所述感应加热单元的容纳管，其中所述容纳管以气密方式容纳所述反应管和所述感应加热单元; 由导电材料制成的屏蔽单元，该导电材料安装成围绕容纳管的外侧; 以及安装在所述反应管与所述感应加热单元的所述容纳管之间的间隙中的惰性气体供给单元，其中，所述惰性气体供给单元构造成将惰性气体供给到所述间隙。

公开(公告)号：US20100275848A1

公开(公告)日：2010-11-04

申请号：US12768191

申请日：2010-04-27

申请人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

发明人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC分类号： C23C16/32

CPC分类号： C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

摘要翻译： 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。

公开(公告)号：US09074284B2

公开(公告)日：2015-07-07

申请号：US12768191

申请日：2010-04-27

申请人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

发明人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

CPC分类号： C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

摘要翻译： 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。

公开(公告)号：US08771416B2

公开(公告)日：2014-07-08

申请号：US12822293

申请日：2010-06-24

申请人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

发明人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

IPC分类号： C30B25/10

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1016

摘要： A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

摘要翻译： 一种基板处理装置，包括：处理基板的反应室; 设置在所述反应室中的加热目标物体至少包围设置有所述基板的区域，所述加热对象物体具有封闭端的圆筒形状; 设置在所述反应室和所述加热对象物之间以包围所述加热对象物体的绝缘体，所述绝缘体具有圆筒形状，所述绝缘体的封闭端面对所述加热目标物体的封闭端; 设置在所述反应室外部的感应加热单元，至少包围所述基板设置的区域; 第一气体供应系统，用于将至少一种源气体供应到所述反应室中; 以及控制器，用于控制第一气体供应系统，使得第一气体供应系统至少将源气体供应到反应室中以处理基板。

公开(公告)号：US20120214317A1

公开(公告)日：2012-08-23

申请号：US13399558

申请日：2012-02-17

申请人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

发明人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

IPC分类号： H01L21/31 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/67757 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C23C16/54 ,  H01L21/67109

摘要： A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.

摘要翻译： 衬底处理设备包括：处理室，被配置为处理多个衬底;衬底保持器，容纳在处理室内并且被构造成以垂直间隔的关系保持衬底;热绝缘部分，被配置为从下面支撑衬底保持器 在处理室内设置有用于围绕处理室内的基板容纳区域的加热单元，以及构造成将特定气体供给至少处理室内的绝热部分容纳区域的气体供给系统。

公开(公告)号：US20080179186A1

公开(公告)日：2008-07-31

申请号：US12014279

申请日：2008-01-15

申请人： Kazuhiro Shimura ,  Kenji Shirako ,  Kosuke Takagi

发明人： Kazuhiro Shimura ,  Kenji Shirako ,  Kosuke Takagi

IPC分类号： C23C14/46

CPC分类号： C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/3146

摘要： Provided is a thin film forming apparatus that can focus ion beams onto a target and reduce a manufacturing cost. In a thin film forming apparatus radiating an ion beam (17) from an ion source (22) toward a target (6) and forming a thin film on a surface of a substrate (5) with particles sputtered by the ion beam, the ion source (22) includes an electrode for extracting ions from plasma and accelerating the extracted ions. The electrode includes a plate-shaped accelerator electrode (26) in which a plurality of accelerator apertures are bored, and a plate-shaped decelerator electrode (27) in which a plurality of decelerator apertures are bored. The plurality of accelerator apertures and the plurality of decelerator apertures are aligned and offset to focus the ion beams (17).

摘要翻译： 本发明提供一种薄膜形成装置，其能够将离子束聚焦到靶上并降低制造成本。 在从离子源（22）朝向靶（6）放射离子束（17）并在基板（5）的表面上用离子束溅射的颗粒形成薄膜的薄膜形成装置中，离子 源极（22）包括用于从等离子体中提取离子并加速提取的离子的电极。 电极包括其中钻有多个加速器孔的板状加速电极（26），以及多个减速器孔被钻孔的板形减速电极（27）。 多个加速器孔和多个减速器孔被对准和偏移以聚焦离子束（17）。

公开(公告)号：US20120156886A1

公开(公告)日：2012-06-21

申请号：US13331123

申请日：2011-12-20

申请人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

发明人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

IPC分类号： H01L21/306 ,  C01B31/36 ,  C23F1/08

CPC分类号： C23C16/325 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

摘要翻译： 改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。 这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室 其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

公开(公告)号：US20110000425A1

公开(公告)日：2011-01-06

申请号：US12822293

申请日：2010-06-24

申请人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

发明人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

IPC分类号： C30B25/10 ,  C30B25/14

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1016

摘要： A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

摘要翻译： 一种基板处理装置，包括：处理基板的反应室; 设置在所述反应室中的加热目标物体至少包围设置有所述基板的区域，所述加热对象物体具有封闭端的圆筒形状; 设置在所述反应室和所述加热对象物之间以包围所述加热对象物体的绝缘子，所述绝缘体具有圆筒形状，所述绝缘体的封闭端面对所述加热目标物体的封闭端; 设置在所述反应室外部的感应加热单元，至少包围所述基板设置的区域; 第一气体供应系统，用于将至少一种源气体供应到所述反应室中; 以及控制器，用于控制第一气体供应系统，使得第一气体供应系统至少将源气体供应到反应室中以处理基板。