利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.014 秒)

    Photonic configuration
    3.
    发明申请
    Photonic configuration 有权
    光子配置

    公开(公告)号：US20070096231A1

    公开(公告)日：2007-05-03

    申请号：US11264206

    申请日：2005-11-01

    申请人： Philip Kuekes ,  Theodore Kamins

    发明人： Philip Kuekes ,  Theodore Kamins

    IPC分类号： H01L27/14

    CPC分类号： G02B6/43 ,  B82Y20/00 ,  G02B6/1225

    摘要： An apparatus comprising an integrated circuit having a plurality of devices each having device characteristics, and a waveguide structure coupled to the integrated circuit, wherein photons provided to the waveguide structure are directed to one or more devices of the plurality of devices and can alter the device characteristics of the device or devices.

    摘要翻译： 一种包括集成电路的装置，其具有各自具有器件特性的多个器件，以及耦合到所述集成电路的波导结构，其中提供给所述波导结构的光子被引导到所述多个器件中的一个或多个器件，并且可以改变所述器件 设备或设备的特性。

    Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same
    4.
    发明申请
    Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same 有权
    纳米增强拉曼光谱 - 包括细长组分的活性纳米结构及其制备方法

    公开(公告)号：US20060164634A1

    公开(公告)日：2006-07-27

    申请号：US11044105

    申请日：2005-01-27

    申请人： Theodore Kamins ,  R. Stanley Williams

    发明人： Theodore Kamins ,  R. Stanley Williams

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/658

    摘要： An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.

    摘要翻译： 公开了一种包括衬底和设置在衬底上的至少一个细长部件的NERS-活性结构。 所述至少一个细长部件可以包括两个导电条，包括NERS-活性材料和位于两个导电条之间的绝缘条。 或者，至少一个细长部件可以包括均匀的部件。 还公开了包括NERS活性结构的NERS系统。 还公开了形成NERS活性结构的方法和用NERS活性结构进行NERS的方法。

    Integrated semiconductor circuits and methods of making integrated semiconductor circuits
    6.
    发明申请
    Integrated semiconductor circuits and methods of making integrated semiconductor circuits 有权
    集成半导体电路和制造集成半导体电路的方法

    公开(公告)号：US20070228459A1

    公开(公告)日：2007-10-04

    申请号：US11393845

    申请日：2006-03-31

    申请人： Theodore Kamins

    发明人： Theodore Kamins

    IPC分类号： H01L29/94

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L31/101 ,  H01L33/005 ,  H01L33/02

    摘要： An integrated semiconductor circuit includes a substrate having a surface of a first semiconductor material, at least one separating material formed on the surface and defining a through hole, and a guide region formed in the hole. The guide region comprises at least one second semiconductor material. The guide region comprises at least a first region and a second region having a larger cross-section than the first region. The first region contacts the surface of the substrate over a small contact region. Methods of making the integrated semiconductor circuit are also disclosed.

    摘要翻译： 集成半导体电路包括具有第一半导体材料的表面的基板，形成在表面上并限定通孔的至少一个分离材料和形成在孔中的引导区域。 引导区域包括至少一个第二半导体材料。 引导区域至少包括具有比第一区域更大的横截面的第一区域和第二区域。 第一区域在小的接触区域上接触衬底的表面。 还公开了制造集成半导体电路的方法。

    Nanowire heterostructures and methods of forming the same
    7.
    发明申请
    Nanowire heterostructures and methods of forming the same 有权
    纳米线异质结构及其形成方法

    公开(公告)号：US20070177139A1

    公开(公告)日：2007-08-02

    申请号：US11341705

    申请日：2006-01-27

    申请人： Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

    发明人： Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/658 ,  B82Y15/00 ,  B82Y20/00 ,  G02B6/107

    摘要： A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.

    摘要翻译： 公开了包含至少一个异质结构纳米线的NERS活性结构。 所述至少一个异质结构纳米线可以包括在轴向上的NERS非活性材料和NERS-活性材料的交替的段。 或者，交替的区段可以是NERS-非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。 在另一个替代方案中，异质结构纳米线可以包括在径向方向上具有NERS非活性材料和NERS-活性材料的交替涂层的芯。 还公开了包括NERS-活性结构的NERS系统。 还公开了形成NERS-活性结构的方法和用NERS-活性结构进行NERS的方法。

    Semiconductor nanowire fluid sensor and method for fabricating the same
    8.
    发明申请
    Semiconductor nanowire fluid sensor and method for fabricating the same 失效
    半导体纳米线流体传感器及其制造方法

    公开(公告)号：US20060138575A1

    公开(公告)日：2006-06-29

    申请号：US11022123

    申请日：2004-12-23

    申请人： Theodore Kamins

    发明人： Theodore Kamins

    IPC分类号： H01L29/84

    CPC分类号： G01N27/127 ,  B82Y15/00 ,  Y10S977/70 ,  Y10S977/72 ,  Y10S977/731

    摘要： Nanowire fluid sensors are provided. The fluid sensors comprise a first electrode, a second electrode, and at least one nanowire between the first electrode and the second electrode. Each nanowire is connected at a first end to the first electrode and at a second end to the second electrode. Methods of fabricating and operating the fluid sensor are also provided.

    摘要翻译： 提供纳米线流体传感器。 流体传感器包括第一电极，第二电极和在第一电极和第二电极之间的至少一个纳米线。 每个纳米线在第一端连接到第一电极，在第二端连接到第二电极。 还提供了制造和操作流体传感器的方法。

    Methods of bridging lateral nanowires and device using same
    9.
    发明申请
    Methods of bridging lateral nanowires and device using same 失效
    桥接横向纳米线的方法及其使用方法

    公开(公告)号：US20050133476A1

    公开(公告)日：2005-06-23

    申请号：US10738176

    申请日：2003-12-17

    申请人： M. Islam ,  Theodore Kamins ,  Shashank Sharma

    发明人： M. Islam ,  Theodore Kamins ,  Shashank Sharma

    IPC分类号： D01F9/127 ,  H01L21/768 ,  H01L23/532 ,  H01L51/30 ,  C23F1/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

    摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

    摘要翻译： 半导体纳米线横向生长。 生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。 横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。 连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。 桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。 自组装纳米线的方法在激活的电极对之间桥接纳米线。 控制纳米线生长的方法在垂直表面形成表面不规则性。 电子设备包括横向生长的纳米级互连。

    Field effect transistor fabrication including formation of a channel in a pore
    10.
    发明申请
    Field effect transistor fabrication including formation of a channel in a pore 失效

    公开(公告)号：US20050032297A1

    公开(公告)日：2005-02-10

    申请号：US10938310

    申请日：2004-09-09

    申请人： Theodore Kamins

    发明人： Theodore Kamins

    IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/8238

    CPC分类号： H01L29/78696 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66742 ,  H01L29/6675 ,  H01L29/78642

    摘要： A field effect transistor having a narrow channel and a method for forming such a device. An upstanding nanopillar is formed from a substrate by directional etching of the substrate preferentially masked by a nanoparticle. A stack of planar layers of material is formed adjacent and around the nanopillar. The bottom layer, adjacent the substantially planar top substrate surface, comprises insulating material. A conductive gate layer overlies the bottom layer while a second insulating layer overlies the gate layer. The pillar material is etched to leave a nanopore into which semiconductor material is deposited, forming an upstanding channel, after insulating material has been deposited on the interior of the nanopore. The source or drain may be a conductive substrate or a doped region of the substrate formed immediately beneath the nanopillar with the other electrode formed by doping the region adjacent the top of the channel.