公开(公告)号：US20050208322A1

公开(公告)日：2005-09-22

申请号：US11063867

申请日：2005-02-24

申请人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

发明人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

IPC分类号： H01L21/306 ,  H01L21/762 ,  G03C5/00 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/84 ,  H01L29/06 ,  H01L29/12 ,  H01L29/30

CPC分类号： H01L21/306 ,  H01L21/30625 ,  H01L21/76254 ,  Y10T428/12528

摘要： An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.

摘要翻译： 根据本发明的多层晶片的实施例包括基底基板，与基底基板相关联的第一层，以及在轴向方向上与基底基板相反一侧的第一层上的第二层，并且具有侧向边缘。 第一层包括沿着垂直于轴向方向测量的沿轴向突出并且横向邻近第二层布置的脊，用于保护侧边缘。 该脊可以围绕横向边缘围绕轴向横截面以防止边缘下降。 此外，脊可以具有大于第二层的轴向厚度的轴向高度。 在一个实施例中，第二层包括氧化半导体，第一层包括氧化绝缘体。

公开(公告)号：US07235427B2

公开(公告)日：2007-06-26

申请号：US11063867

申请日：2005-02-24

申请人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

发明人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

IPC分类号： H01L21/48

CPC分类号： H01L21/306 ,  H01L21/30625 ,  H01L21/76254 ,  Y10T428/12528

摘要： An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.

摘要翻译： 根据本发明的多层晶片的实施例包括基底基板，与基底基板相关联的第一层，以及在轴向方向上与基底基板相反一侧的第一层上的第二层，并且具有侧向边缘。 第一层包括沿着垂直于轴向方向测量的沿轴向突出并且横向邻近第二层布置的脊，用于保护侧边缘。 该脊可以围绕横向边缘围绕轴向横截面以防止边缘下降。 此外，脊可以具有大于第二层的轴向厚度的轴向高度。 在一个实施例中，第二层包括氧化半导体，第一层包括氧化绝缘体。

公开(公告)号：US06902988B2

公开(公告)日：2005-06-07

申请号：US10318304

申请日：2002-12-13

申请人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

发明人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

IPC分类号： H01L21/306 ,  H01L21/762 ,  H01L21/46

CPC分类号： H01L21/306 ,  H01L21/30625 ,  H01L21/76254 ,  Y10T428/12528

摘要： The invention relates to a process for the treatment of substrates (1) for microelectronics or optoelectronics comprising a working layer (6) at least partially composed of an oxidizable material on at least one of their faces, this process comprising: a first sacrificial oxidation stage for removing material constituting the working layer (6) over a certain surface thickness of each substrate (1), a stage of polishing (200) the face which has been subjected to the first sacrificial oxidation stage (100), and a second sacrificial oxidation stage for again removing material constituting the working layer (6) on the polished face (17).

摘要翻译： 本发明涉及一种用于处理微电子学或光电子学的衬底（1）的方法，该方法包括在其至少一个面上至少部分由可氧化材料组成的工作层（6），该工艺层包括：第一牺牲氧化阶段 用于去除在每个基板（1）的某一表面厚度上构成工作层（6）的材料，抛光（200）经过第一牺牲氧化阶段（100）的表面和第二牺牲氧化层 用于再次去除在抛光面（17）上构成工作层（6）的材料。

公开(公告)号：US06232201B1

公开(公告)日：2001-05-15

申请号：US09113155

申请日：1998-07-10

申请人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

发明人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

IPC分类号： H01L2176

CPC分类号： H01L21/7624 ,  H01L21/3105 ,  H01L21/31155

摘要： An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

摘要翻译： 目的在于提供一种半导体衬底处理方法以及防止从衬底的边缘部分形成微粒的半导体衬底。 在SOI衬底（10）的半径方向上将硅离子注入到SOI衬底（10）的边缘部分中，以使SOI衬底（10）的边缘部分中的掩埋氧化膜（2）成为硅 丰富的状态。 因此，提供SOI衬底（100），其中掩埋氧化膜（2）在边缘部分中基本上被去除。

公开(公告)号：US06914307B2

公开(公告)日：2005-07-05

申请号：US10657068

申请日：2003-09-09

申请人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

发明人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/01 ,  H01L27/08 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L21/76286 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electrically isolated from each other by the isolation film. The semiconductor device also includes a PN junction portion provided under the isolation film and formed by two semiconductor regions of different conductivity types in the semiconductor layer. The isolation film includes a nitride film provided in a position corresponding to a top of the PN junction portion and has a substantially uniform thickness across the two semiconductor regions and an upper oxide film and a lower oxide film which are provided in upper and lower portions of the nitride film. The surface of the semiconductor layer is silicidized in such a state that a surface of the isolation film is exposed.

摘要翻译： 半导体器件包括半导体层，形成在半导体层上的多个半导体元件和设置在半导体层的表面中的隔离膜，半导体元件通过隔离膜彼此电隔离。 半导体器件还包括设置在隔离膜下方并由半导体层中由不同导电类型的两个半导体区域形成的PN结部分。 隔离膜包括设置在与PN结部分的顶部相对应的位置的氮化物膜，并且在两个半导体区域上具有基本上均匀的厚度，以及设置在上部和下部的上部氧化物膜和低级氧化物膜 氮化膜。 半导体层的表面在隔离膜的表面露出的状态下被硅化。

公开(公告)号：US06563172B2

公开(公告)日：2003-05-13

申请号：US09770388

申请日：2001-01-29

申请人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

发明人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

IPC分类号： H01L2701

CPC分类号： H01L21/7624 ,  H01L21/3105 ,  H01L21/31155

摘要： An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

公开(公告)号：US06646306B2

公开(公告)日：2003-11-11

申请号：US09985020

申请日：2001-11-01

申请人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

发明人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

IPC分类号： H01L2701

CPC分类号： H01L21/76286 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/458

摘要： A semiconductor device that prevents metal pollution and a method of manufacturing the semiconductor device. A region (NR) and a region (PR) are defined by a trench isolation oxide film, a polysilicon film selectively provided on the trench isolation oxide film, a silicon layer provided on the polysilicon film, and a side wall spacer provided on a side surface of the polysilicon film. The polysilicon film is provided in a position corresponding to a top of a PN junction portion JP of a P-type well region and an N-type well region in a SOI layer across the two well regions.

摘要翻译： 一种防止金属污染的半导体器件以及半导体器件的制造方法。 区域（NR）和区域（PR）由沟槽隔离氧化膜，选择性地设置在沟槽隔离氧化膜上的多晶硅膜，设置在多晶硅膜上的硅层和设置在侧面上的侧壁隔离物 多晶硅膜的表面。 多晶硅膜设置在对应于跨越两个阱区域的SOI层中的P型阱区域和N型阱区域的PN结部分JP的顶部的位置。

公开(公告)号：US06558990B1

公开(公告)日：2003-05-06

申请号：US09786228

申请日：2001-03-01

申请人： Masaru Takamatsu ,  Takashi Katakura ,  Toshiaki Iwamatsu ,  Hideki Naruoka

发明人： Masaru Takamatsu ,  Takashi Katakura ,  Toshiaki Iwamatsu ,  Hideki Naruoka

IPC分类号： H01L2100

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76283 ,  H01L21/84 ,  H01L23/544 ,  H01L27/1203 ,  H01L2223/54406 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a SOI substrate (10) comprises the steps of: forming an oxide film (12) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate (11); forming a resist layer (13) on the oxide film (12) at cross-sectional both end surfaces of the substrate (11); and removing the oxide film (12) at those portions which are left from the covering of the resist layer (13), to thereby expose the both main surfaces of the substrate (11). Next, the resist layer (13) is removed to thereby leave the oxide film (12) at the both end surfaces of the substrate (11); and oxygen ions (I) are dosed into the substrate (11) from one of the exposed both main surfaces, followed by an anneal processing to thereby form an oxide layer (14) in a region at a predetermined depth from the one main surface of the substrate (11). The oxide film (12) left on the both end surfaces of the substrate (11) is then removed.

摘要翻译： SOI衬底（10）的制造方法包括以下步骤：在硅衬底（11）的两个主表面和横截面的两个端表面的横截面上形成氧化物膜（12）; 在所述基板（11）的两个端面的横截面上在所述氧化物膜（12）上形成抗蚀剂层（13）; 以及在从抗蚀剂层（13）的覆盖层留下的部分去除氧化膜（12），从而露出基板（11）的两个主表面。 接下来，除去抗蚀剂层（13），从而在基板（11）的两个端面处留下氧化膜（12）。 和氧离子（I）从暴露的两个主表面中的一个喷射到基板（11）中，随后进行退火处理，从而在距离主表面的一个主表面预定深度的区域中形成氧化物层（14） 基板（11）。 然后去除留在基板（11）的两个端面上的氧化膜（12）。

公开(公告)号：US20050212056A1

公开(公告)日：2005-09-29

申请号：US11135522

申请日：2005-05-24

申请人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

发明人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/01 ,  H01L27/08 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L21/76286 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/458

摘要： To provide a semiconductor device capable of preventing drawbacks from being caused by metal pollution and a method of manufacturing the semiconductor device. A region (NR) and a region (PR) are defined by a trench isolation oxide film (ST21), a polysilicon film (PS21) is selectively provided on the trench isolation oxide film (ST21), a silicon layer (S22) is provided on the polysilicon film (PS21), and a side wall spacer (SW2) is provided on a side surface of the polysilicon film (PS21). The polysilicon film (PS21) is provided in a position corresponding to a top of a PN junction portion JP of a P-type well region (WR11) and an N-type well region (WR12) in an SOI layer 3 across the two well regions.

摘要翻译： 提供能够防止金属污染引起的缺陷的半导体器件以及半导体器件的制造方法。 区域（NR）和区域（PR）由沟槽隔离氧化膜（ST21）限定，在沟槽隔离氧化膜（ST21）上选择性地设置多晶硅膜（PS21），硅层（S 22）设置在多晶硅膜（PS21）上，在多晶硅膜（PS21）的侧面设置有侧壁隔板（SW2）。 多晶硅膜（PS21）被设置在对应于SOI层3中的P型阱区域（WR 11）和N型阱区域（WR 12）的PN结部分JP的顶部的位置 两个井区。

公开(公告)号：US06872979B2

公开(公告)日：2005-03-29

申请号：US10357392

申请日：2003-02-04

申请人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

发明人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/7624 ,  H01L21/3105 ,  H01L21/31155

摘要： A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.

摘要翻译： 一种半导体衬底，其防止从衬底的边缘部分形成颗粒。 衬底包含衬底上氧化物膜和堆叠在氧化物膜上的SOI层。 通过混合SOI层和基板上氧化物膜以覆盖边缘部分，在衬底上氧化膜和SOI层的边缘部分上形成熔融层。 也可以在衬底上氧化膜的边缘部分和SOI层上形成外延层以覆盖边缘部分。