Abstract:
A latch assembly is connectable to a riser. A rotating control device can be positioned with the riser, sealing the rotating control device with the latch assembly and removably latching the rotating control device to the latch assembly and to the riser. The latch assembly can be remotely actuated. The latch assembly can provide an auxiliary safety mechanism to provide a backup actuation mechanism to unlatch the rotating control device from the latch assembly. The latch assembly can be bolted to the riser. Alternately, the latch assembly can be latched with the riser using a similar latching mechanism as used to latch the latch assembly to the rotating control device. A pressure transducer protector assembly can protect a transducer for monitoring wellbore pressure in the riser. A remote indicator panel can indicate the status of the latch assembly.
Abstract:
A holding member provides for releasably positioning a rotating control head assembly in a subsea housing. The holding member engages an internal formation in the subsea housing to resist movement of the rotating control head assembly relative to the subsea housing. The rotating control head assembly is sealed with the subsea housing when the holding member engages the internal formation. An extendible portion of the holding member assembly extrudes an elastomer between an upper portion and a lower portion of the internal housing to seal the rotating control head assembly with the subsea housing. Pressure relief mechanisms release excess pressure in the subsea housing and a pressure compensation mechanism pressurize bearings in the bearing assembly at a predetermined pressure.
Abstract:
A system and method for reducing repairs to radial seals used in a rotating control head used while drilling is disclosed. Also, a system and method to detect leaks in the rotating control head and a latching system to latch the rotating control head to a housing is disclosed.
Abstract:
A seal assembly for use with a rotating control head is provided. The seal assembly includes a rotatable member and a cavity formed between the rotatable member and a tubular radially inwardly disposed from the rotatable member. The cavity having a first surface and a second surface. The seal assembly further includes a seal member having a first end and a second end disposed between the first surface and the second surface of the cavity and sealable with the tubular between the first and the second ends due to deformation of the seal member.
Abstract:
The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.
Abstract:
A system for assessing underwater biomass that comprises a frame that can float and hold the system on a body of water; a transducer that emits and receives wave signals; a motor box, that positions the transducer below a water line; a control unit to allow a user to operate the system and view results obtained from the system; an electronics housing that receives a CPU board that communicates with and relays information to and from, the control unit; and a communication device to facilitate communication between the control unit and the CPU board.
Abstract:
A method for improving high-κ gate dielectric film (104) properties. The high-κ film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient (108) with a low partial pressure of reducer to remove defects and impurities.
Abstract:
A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.
Abstract:
The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
Abstract:
The present invention provides, in one embodiment, a gate structure (100). The gate structure comprises a gate dielectric (105) and a gate (110). The gate dielectric includes a refractory metal and is located over a semiconductor substrate (115). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure (200), a method of forming a gate structure (300) for a semiconductor device (301) and a dual gate integrated circuit (400).