摘要:
An integrated circuit memory for a color lookup table for a display system. The memory has a video port and path for reading data identifying colors for pixels at >100 or even >200 MegaHertz, and a CPU port and path for reading and writing data identifying colors at locations in the memory.Each memory cell includes a flip-flop with true and complement terminals. The CPU port includes two pass transistors, each having a first channel terminal coupled to the true or complement terminal, a second channel terminal coupled to a bidirectional bit line of the CPU path, and a gate coupled to a word line of the CPU path. The video port includes an isolated sensing terminal and two transistors. A first transistor has a first channel terminal coupled to the isolated sensing terminal, a second channel terminal coupled to a reference, and a gate coupled to the true or complement terminal. A second transistor has a first channel terminal coupled to the isolated sensing terminal, a second channel terminal coupled to a bit line of the video path, and a gate coupled to a word line of the video path.A layout configuration of each memory cell and of the memory cell array allows same-channel-type transistors from a plurality of memory cells to be formed in a single, large well, and allows adjacent memory cells to share contacts. This reduces the integrated circuit's size, improves its speed, and increases manufacturing yields.
摘要:
An integrated circuit memory for a color lookup table for a display system. The memory has a video port and path for reading data identifying colors for pixels at >100 or even >200 MegaHertz, and a CPU port and path for reading and writing data identifying colors at locations in the memory. Each memory cell includes a flip-flop with true and complement terminals. The CPU port includes two pass transistors, each having a first channel terminal coupled to the true or complement terminal, a second channel terminal coupled to a bidirectional bit line of the CPU path, and a gate coupled to a word line of the CPU path. The video port includes an isolated sensing terminal and two transistors. A first transistor has a first channel terminal coupled to the isolated sensing terminal, a second channel terminal coupled to a reference, and a gate coupled to the true or complement terminal. A second transistor has a first channel terminal coupled to the isolated sensing terminal, a second channel terminal coupled to a bit line of the video path, and a gate coupled to a word line of the video path.
摘要:
The present system comprises a radiation tolerant programmable logic device having logic modules and routing resources coupling together the logic modules. Configuration data lines providing configuration data control the programming of the logic modules and the routing resources. Error correction circuitry coupled to the configuration data lines analyzes and corrects any errors in the configuration data that may occur due to a single event upset (SEU).
摘要:
An SRAM bus architecture includes pass-through interconnect conductors. Each of the pass-through interconnect conductors is connected to routing channels of the general interconnect architecture of the FPGA through an element which includes a pass transistor connected in parallel with a tri-state buffer. The pass transistors and tri-state buffers are controlled by configuration SRAM bits. Some of the pass-through interconnect conductors are connected by programmable elements to the address, data and control signal lines of the SRAM blocks, while other pass through the SRAM blocks with out being further connected to the SRAM bussing architecture.
摘要:
An SRAM bus architecture includes pass-through interconnect conductors. Each of the pass-through interconnect conductors is connected to routing channels of the general interconnect architecture of the FPGA through an element which includes a pass transistor connected in parallel with a tri-state buffer. The pass transistors and tri-state buffers are controlled by configuration SRAM bits. Some of the pass-through interconnect conductors are connected by programmable elements to the address, data and control signal lines of the SRAM blocks, while other pass through the SRAM blocks with out being further connected to the SRAM bussing architecture.
摘要:
A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architecture includes programmable elements and interconnect conductors. Ones of the programmable elements are coupled to the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, the digital input/output circuit block, and to the interconnect conductors, such that inputs and outputs of the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, and the digital input/output circuit block can be programmably coupled to one another.
摘要:
A flash-based programmable integrated circuit includes programmable circuitry, a flash memory array coupled to the programmable circuitry for configuring it, flash programming circuitry for programming the flash memory array, and an on-chip intelligence, such as a microcontroller or state machine, coupled to the programming circuitry to program the flash memory from off-chip data supplied via an I/O pad, or to refresh the data stored in the flash memory to prevent it from degrading.
摘要:
A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architecture includes programmable elements and interconnect conductors. Ones of the programmable elements are coupled to the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, the digital input/output circuit block, and to the interconnect conductors, such that inputs and outputs of the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, and the digital input/output circuit block can be programmably coupled to one another.
摘要:
The present invention comprises a device and a method for a deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array. The deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array comprises a configuration memory that has a plurality of configuration bits Read and write circuitry is provided to configure the plurality of configuration bits. A radiation hard latch is coupled to and controls a programmable element and an interface couples at least one of the plurality of configuration bits to the radiation hard latch when the write circuitry writes to the plurality of configuration bits.
摘要:
The present system comprises a radiation tolerant programmable logic device having logic modules and routing resources coupling together the logic modules. Configuration data lines providing configuration data control the programming of the logic modules and the routing resources. Error correction circuitry coupled to the configuration data lines analyzes and corrects any errors in the configuration data that may occur due to a single event upset (SEU).