摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要:
A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.
摘要翻译:提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常,II-VI材料选自ZnSe,CdSe,BeSe,MgSe,ZnTe,CdTe,BeTe,MgTe,ZnS,CdS,BeS,MgS及其合金,更典型地选自CdZnSe, CdMgZnSe,BeZnTe和BeMgZnTe合金,并且最典型的是Cd x Zn 1-x Se,其中x在0.44和0.54之间。 通常,III-V材料选自InAs,AlAs,GaAs,InP,AlP,GaP,InSb,AlSb,GaSb及其合金,更典型地选自InP,InAlAs,GaInAs,AlInGaAs 和GaInAsP合金,并且最典型地是InP或Al y Al 1-y,其中y在0.44和0.52之间。 在一个实施例中,分层结构形成一个或多个分布式布拉格反射器(DBR)。 另一方面,本发明提供了一种分层结构,其包括:InP衬底和具有95%或更大的反射率的分布式布拉格反射器(DBR),其包括不超过15层的外延半导体材料。 另一方面,本发明提供一种包括根据本发明的分层结构的激光器。 另一方面,本发明提供了一种包括根据本发明的分层结构的光电检测器。
摘要:
A submount for use in an optical assembly and an optical assembly comprising the submount, a laser diode and a second optical element are provided, where the submount comprises a substrate and a plurality of standoff structures. The standoff structures may be formed by patterned deposition onto the substrate. The substrate and standoff structures may be composed of different materials. Typically, the substrate comprises a material selected from the group consisting of: diamond, diamond-like materials, boron nitride and aluminum nitride. The submount may comprise solder layers adjacent to the standoff structures, which may be greater in height from the substrate than the standoff structures.
摘要:
An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
摘要:
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
Methods and systems for enabling an augmented reality character to maintain and exhibit awareness of an observer are provided. A portable device held by a user is utilized to capture an image stream of a real environment, and generate an augmented reality image stream which includes a virtual character. The augmented reality image stream is displayed on the portable device to the user. As the user maneuvers the portable device, its position and movement are continuously tracked. The virtual character is configured to demonstrate awareness of the user by, for example, adjusting its gaze so as to look in the direction of the portable device.
摘要:
A microwave oven cabinet is ergonomic designed to provide for both stacking and jigsaw-type back-to-back interlining of multiple units of the microwave ovens. In particular, the cabinet configuration advantageously establishes a reduced footprint, ergonomically designed microwave oven which can be effectively employed in various fields, including fast food chains wherein multiple such ovens may need to be functionally positioned in a limited area, while still being easily accessible.
摘要:
A detonator free blasting system, which comprises: a bulk explosive; a confined explosive; a fiber optic adapted to deliver laser light to the confined explosive, wherein the confined explosive is provided relative to the bulk explosive such that detonation of the confined explosive causes initiation of the bulk explosive.