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    Magnetic resonance surgery using heat waves produced with a laser fiber
    1.
    发明授权
    Magnetic resonance surgery using heat waves produced with a laser fiber 失效
    使用激光光纤产生的热波进行磁共振手术

    公开(公告)号：US5368031A

    公开(公告)日：1994-11-29

    申请号：US125520

    申请日：1993-09-24

    申请人： Harvey E. Cline ,  Thomas R. Anthony

    发明人： Harvey E. Cline ,  Thomas R. Anthony

    IPC分类号： A61B17/00 ,  A61B18/22 ,  A61B19/00 ,  A61N7/02 ,  G01R33/48 ,  G01R33/561 ,  G01R33/563 ,  A61B5/055

    CPC分类号： G01R33/4804 ,  A61B18/22 ,  A61N7/02 ,  A61B2017/00154 ,  A61B2090/374 ,  G01R33/561 ,  G01R33/56341

    摘要： Surgery is performed with pulsed heat means that selectively destroys tissue in a region within a patient. The size of the region destroyed is dependent upon the frequency of the pulses of the pulsed heat means and thermal conductivity of the tissue of the patient. The pulsed heat means can be a coherent optical source that is guided by laser fiber to the tissue to be destroyed. In another embodiment the pulsed heat means is a focussed ultrasound transducer that dissipates ultrasonic energy at a focal point within the region of tissue to be destroyed. A magnetic resonance imaging system employing a temperature sensitive pulse sequence creates an image of the tissue and the region being heated to allow a surgeon to alter the position of the pulsed heat means or vary the pulse frequency.

    摘要翻译： 使用脉冲加热手段进行手术，其选择性地破坏患者内的区域中的组织。 破坏的区域的大小取决于脉冲加热装置的脉冲频率和患者组织的热导率。 脉冲加热装置可以是由激光纤维引导到要破坏的组织的相干光源。 在另一个实施例中，脉冲加热装置是聚焦的超声换能器，其在要破坏的组织区域内的焦点处散发超声波能量。 使用温度敏感脉冲序列的磁共振成像系统产生组织的图像和被加热的区域，以允许外科医生改变脉冲加热装置的位置或改变脉冲频率。

    Apparatus for practicing temperature gradient zone melting
    3.
    发明授权
    Apparatus for practicing temperature gradient zone melting 失效
    用于实施温度梯度区熔化的装置

    公开(公告)号：US4224504A

    公开(公告)日：1980-09-23

    申请号：US917492

    申请日：1978-06-21

    申请人： Carl A. Erikson ,  Thomas R. Anthony ,  Harvey E. Cline ,  Siegwalt Ludke ,  John O. Fielding

    发明人： Carl A. Erikson ,  Thomas R. Anthony ,  Harvey E. Cline ,  Siegwalt Ludke ,  John O. Fielding

    IPC分类号： C30B13/00 ,  C30B13/02 ,  H01L21/00 ,  B25J15/06 ,  F27B9/06

    CPC分类号： H01L21/67115 ,  C30B13/005 ,  C30B13/02

    摘要： An apparatus for practicing temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

    摘要翻译： 用于在多个半导体主体上同时实施温度梯度区熔化的装置包括：用于接收加工体的可关闭工作室; 设置在所述工作室中并包括其第一关闭构件的热源; 设置在所述工作室中并包括其第二闭合构件的散热器和用于将一个或多个半导体材料体转移到所述工作室进行处理的装置和用于在处理之后的所述工作室的装置。 传送装置包括用于选择性地接合半导体主体并且支撑传送体的驱动装置和用于使操作装置朝向和远离工作室移动并使操纵装置相对于半导体主体定向的驱动装置的操纵装置。

    Process of making a deep diode solid state transformer
    6.
    发明授权
    Process of making a deep diode solid state transformer 失效
    制造深二极管固态变压器的工艺

    公开(公告)号：US4071378A

    公开(公告)日：1978-01-31

    申请号：US738709

    申请日：1976-11-04

    申请人： Thomas R. Anthony ,  Harvey E. Cline

    发明人： Thomas R. Anthony ,  Harvey E. Cline

    IPC分类号： H01L21/24 ,  H01L23/522 ,  H01L27/08 ,  H01L21/225

    CPC分类号： H01L27/0814 ,  H01L21/24 ,  H01L23/522 ,  H01L27/08 ,  H01F27/2804 ,  H01L2924/0002

    摘要： An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.

    摘要翻译： 在半导体材料体中设置有一列柱状结构。 每个柱状结构的材料是其中掺杂金属具有固体溶解度的人体的再结晶材料。 提供了用于将柱状结构连接成两个串联电路布置的装置，以分别作为深二极管固态变压器的初级和次级绕组起作用。

    Process for making a deep power diode by thermal migration of dopant
    10.
    发明授权
    Process for making a deep power diode by thermal migration of dopant 失效
    通过掺杂剂的热迁移制造深度功率二极管的工艺

    公开(公告)号：US3956023A

    公开(公告)日：1976-05-11

    申请号：US519249

    申请日：1974-10-30

    申请人： Harvey E. Cline ,  Thomas R. Anthony

    发明人： Harvey E. Cline ,  Thomas R. Anthony

    IPC分类号： H01L21/18 ,  H01L21/24 ,  H01L29/00 ,  H01L7/36

    CPC分类号： H01L21/24 ,  H01L21/185 ,  H01L29/00 ,  Y10S148/107 ,  Y10S148/166

    摘要： A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material of a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material. Preferably, the metal-enriched melt is no greater than approximately 20 microns in thickness. The second body initially has a axial crystallographic orientation when it is a wafer. However, the second body initially may be polycrystalline semiconductor material.

    摘要翻译： 半导体二极管包括具有选定电阻率和第一类型导电性的第一半导体材料体和第二类型导电性区域和所选择的电阻率。 第二体由其中具有固体溶解度的层的再结晶半导体材料组成，并具有与第一主体相同的晶体结构。 第二区域是通过体现半导体材料的金属富集的熔体通过半导体材料的第二体的迁移的温度梯度区熔融过程形成的。 优选地，金属富集的熔体的厚度不大于约20微米。 当它是晶片时，第二主体最初具有<111>轴向晶体取向。 然而，第二主体最初可以是多晶半导体材料。