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1.发明申请PLASMA TREATMENT SYSTEMS AND METHODS FOR UNIFORMLY DISTRIBUTING RADIOFREQUENCY POWER BETWEEN MULTIPLE ELECTRODES 有权等离子体处理系统和均匀分布多个电极之间的射频功率的方法公开(公告)号：US20120279658A1
公开(公告)日：2012-11-08
申请号：US13100605
申请日：2011-05-04
IPC分类号： C23F1/08 , H05H7/02 , C23C16/505 , B08B13/00 , C23C16/50
CPC分类号： H01J37/32082 , H01J37/32174 , H01J37/32532 , H01J37/32568 , H01J37/32577
摘要： Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.
摘要翻译： 用于在等离子体处理系统中将RF能量分配到电极的等离子体处理系统和方法。 等离子体处理系统包括电源和接地总线，正负相母线总线以及正负相辅助电机总线。 功率和接地总线通过隔离变压器耦合到次级电池总线，使得负相位二次电池总线上提供与提供给正相二次电极母线的RF信号相差180度的RF信号。 二次电极总线通过电容器耦合到相应的正相和主相母线总线。 主电极总线各自耦合到真空室中的电极。 将主电极母线耦合到RF地的负载线圈可以与电容器协调以调节功率总线处的输入阻抗。
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2.发明授权Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes 有权用于在多个电极之间均匀分布射频功率的等离子体处理系统和方法公开(公告)号：US08333166B2
公开(公告)日：2012-12-18
申请号：US13100605
申请日：2011-05-04
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32082 , H01J37/32174 , H01J37/32532 , H01J37/32568 , H01J37/32577
摘要： Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.
摘要翻译： 用于在等离子体处理系统中将RF能量分配到电极的等离子体处理系统和方法。 等离子体处理系统包括电源和接地总线，正负相母线总线以及正负相辅助电机总线。 功率和接地总线通过隔离变压器耦合到次级电池总线，使得负相位二次电池总线上提供与提供给正相二次电极母线的RF信号相差180度的RF信号。 二次电极总线通过电容器耦合到相应的正相和主相母线总线。 主电极总线各自耦合到真空室中的电极。 将主电极母线耦合到RF地的负载线圈可以与电容器协调以调节功率总线处的输入阻抗。
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3.发明申请公开(公告)号：US20090288773A1
公开(公告)日：2009-11-26
申请号：US12123954
申请日：2008-05-20
CPC分类号： H01J15/02 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/32577
摘要： Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.
摘要翻译： 用于从源气体产生的等离子体处理产品的装置。 该装置包括真空室，在真空室内相邻布置的多个并置电极以及与电极电耦合的等离子体激发源。 该装置可以包括延伸到每个电极内部的导电构件，以与等离子体激发源建立相应的电连接。 该装置可以包括气体分配歧管和与气体分配歧管连接的多个气体输送管。 每个气体输送管具有被配置为在每个相邻的一对电极之间注入源气体的注入口。 该装置还可以包括流动限制构件，其操作以部分地阻塞每对相邻的电极对之间的周边间隙，其限制源气体从每个相邻的一对电极之间的处理室逸出。
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4.发明授权Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes 有权具有密封处理室的多电极等离子体处理系统和与电极的内部总线电连接公开(公告)号：US08372238B2
公开(公告)日：2013-02-12
申请号：US12123954
申请日：2008-05-20
CPC分类号： H01J15/02 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/32577
摘要： Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.
摘要翻译： 用于从源气体产生的等离子体处理产品的装置。 该装置包括真空室，在真空室内相邻布置的多个并置电极以及与电极电耦合的等离子体激发源。 该装置可以包括延伸到每个电极内部的导电构件，以与等离子体激发源建立相应的电连接。 该装置可以包括气体分配歧管和与气体分配歧管连接的多个气体输送管。 每个气体输送管具有被配置为在每个相邻的一对电极之间注入源气体的注入口。 该装置还可以包括流动限制构件，其操作以部分地阻塞每对相邻电极之间的周边间隙，其限制源气体从每个相邻的一对电极之间的处理室逸出。
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公开(公告)号：US07013834B2
公开(公告)日：2006-03-21
申请号：US10324436
申请日：2002-12-20
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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公开(公告)号：US08623471B2
公开(公告)日：2014-01-07
申请号：US13353823
申请日：2012-01-19
IPC分类号： H05H1/24 , H05H1/00 , C23C14/02 , H01L21/306 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
摘要翻译： 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖，通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口，以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面，可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。
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公开(公告)号：US20120118857A1
公开(公告)日：2012-05-17
申请号：US13353823
申请日：2012-01-19
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
摘要翻译： 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖，通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口，以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面，可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。
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公开(公告)号：US08613827B2
公开(公告)日：2013-12-24
申请号：US11177575
申请日：2005-07-08
IPC分类号： C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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公开(公告)号：US08480850B2
公开(公告)日：2013-07-09
申请号：US12703812
申请日：2010-02-11
IPC分类号： C23F1/00 , H01L21/306 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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公开(公告)号：US20100140223A1
公开(公告)日：2010-06-10
申请号：US12703812
申请日：2010-02-11
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
摘要翻译： 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖，通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口，以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面，可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。
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