Semi-conductor component, as well as a process for the in-or output of test data
    1.
    发明授权
    Semi-conductor component, as well as a process for the in-or output of test data 有权
    半导体元件,以及测试数据输入或输出的过程

    公开(公告)号:US07184339B2

    公开(公告)日:2007-02-27

    申请号:US11253807

    申请日:2005-10-20

    IPC分类号: G11C29/00

    摘要: The invention relates to a semi-conductor component, and a process for the in- and/or output of test data and/or semi-conductor component operating control data into or from a semi-conductor component, whereby the semi-conductor component comprises one or more useful data memory cells, and/or one or more test data and/or semi-conductor component operating control data registers for storing test data and/or semi-conductor component operating control data, and whereby the process comprises the steps of applying a control signal to the semi-conductor component, whereby the semi-conductor component is switched from a first to a second operating mode; and applying an address signal to the semi-conductor component, whereby one or more of the test data and/or semi-conductor component operating control data registers of the semi-conductor component is addressed by the address signal in the second operating mode, and one or more of the useful data memory cells in the first operating mode.

    摘要翻译: 本发明涉及一种半导体部件,以及用于将测试数据和/或半导体部件输入和/或输出到半导体部件中或从半导体部件操作控制数据的过程,由此半导体部件包括 一个或多个有用的数据存储器单元,和/或用于存储测试数据和/或半导体部件操作控制数据的一个或多个测试数据和/或半导体部件操作控制数据寄存器,并且由此该过程包括以下步骤: 对半导体部件施加控制信号,由此将半导体部件从第一操作模式切换到第二操作模式; 以及向所述半导体部件施加地址信号,由此所述半导体部件的测试数据和/或半导体部件操作控制数据寄存器中的一个或多个通过所述第二操作模式中的所述地址信号来寻址,以及 处于第一操作模式的一个或多个有用数据存储单元。

    Semi-conductor component, as well as a process for the in-or output of test data
    2.
    发明申请
    Semi-conductor component, as well as a process for the in-or output of test data 有权
    半导体元件,以及测试数据输入或输出的过程

    公开(公告)号:US20060087900A1

    公开(公告)日:2006-04-27

    申请号:US11253807

    申请日:2005-10-20

    IPC分类号: G11C7/00

    摘要: The invention relates to a semi-conductor component, and a process for the in- and/or output of test data and/or semi-conductor component operating control data into or from a semi-conductor component, whereby the semi-conductor component comprises one or more useful data memory cells, and/or one or more test data and/or semi-conductor component operating control data registers for storing test data and/or semi-conductor component operating control data, and whereby the process comprises the steps of applying a control signal to the semi-conductor component, whereby the semi-conductor component is switched from a first to a second operating mode; and applying an address signal to the semi-conductor component, whereby one or more of the test data and/or semi-conductor component operating control data registers of the semi-conductor component is addressed by the address signal in the second operating mode, and one or more of the useful data memory cells in the first operating mode.

    摘要翻译: 本发明涉及一种半导体部件,以及用于将测试数据和/或半导体部件输入和/或输出到半导体部件中或从半导体部件操作控制数据的过程,由此半导体部件包括 一个或多个有用的数据存储器单元,和/或用于存储测试数据和/或半导体部件操作控制数据的一个或多个测试数据和/或半导体部件操作控制数据寄存器,并且由此该过程包括以下步骤: 对半导体部件施加控制信号,由此将半导体部件从第一操作模式切换到第二操作模式; 以及向所述半导体部件施加地址信号,由此所述半导体部件的测试数据和/或半导体部件操作控制数据寄存器中的一个或多个通过所述第二操作模式中的地址信号来寻址,以及 处于第一操作模式的一个或多个有用数据存储单元。

    Inputting and outputting operating parameters for an integrated semiconductor memory device
    3.
    发明授权
    Inputting and outputting operating parameters for an integrated semiconductor memory device 有权
    输入和输出集成半导体存储器件的工作参数

    公开(公告)号:US07330378B2

    公开(公告)日:2008-02-12

    申请号:US11266477

    申请日:2005-11-04

    IPC分类号: G11C7/10

    摘要: An integrated semiconductor memory device includes a control circuit with a mode register to store operating parameters, as well as further registers to store further operating parameters. An operating parameter is selectively written to or read from one of the registers for storage of an operating parameter as a function of a first or second state of a configuration signal that is applied to an address connection. Any subsequent write and read access to one of the registers for storage of an operating parameter takes place analogously to a write and read access to a memory cell in a memory cell array. The integrated semiconductor memory device is thus operated to allow writing and reading of operating parameters using a standard interface and a standard protocol for inputting and outputting data to and from the memory cell array.

    摘要翻译: 集成半导体存储器件包括具有模式寄存器以存储操作参数的控制电路,以及用于存储其他操作参数的另外的寄存器。 操作参数被选择性地写入寄存器之一或从其中的一个读取,用于存储作为施加到地址连接的配置信号的第一或第二状态的函数的操作参数。 对用于存储操作参数的寄存器之一的任何后续写入和读取访问类似于对存储器单元阵列中的存储器单元的写入和读取访问进行。 因此,集成半导体存储器件被操作以允许使用标准接口和用于向存储器单元阵列输入数据和从存储器单元阵列输出数据的标准协议来读写操作参数。

    Inputting and outputting operating parameters for an integrated semiconductor memory device
    4.
    发明申请
    Inputting and outputting operating parameters for an integrated semiconductor memory device 有权
    输入和输出集成半导体存储器件的工作参数

    公开(公告)号:US20060120139A1

    公开(公告)日:2006-06-08

    申请号:US11266477

    申请日:2005-11-04

    IPC分类号: G11C11/24

    摘要: An integrated semiconductor memory device includes a control circuit with a mode register to store operating parameters, as well as further registers to store further operating parameters. An operating parameter is selectively written to or read from one of the registers for storage of an operating parameter as a function of a first or second state of a configuration signal that is applied to an address connection. Any subsequent write and read access to one of the registers for storage of an operating parameter takes place analogously to a write and read access to a memory cell in a memory cell array. The integrated semiconductor memory device is thus operated to allow writing and reading of operating parameters using a standard interface and a standard protocol for inputting and outputting data to and from the memory cell array.

    摘要翻译: 集成半导体存储器件包括具有模式寄存器以存储操作参数的控制电路,以及用于存储其他操作参数的另外的寄存器。 操作参数被选择性地写入寄存器之一或从其中的一个读取,用于存储作为施加到地址连接的配置信号的第一或第二状态的函数的操作参数。 对用于存储操作参数的寄存器之一的任何后续写入和读取访问类似于对存储器单元阵列中的存储器单元的写入和读取访问进行。 因此,集成半导体存储器件被操作以允许使用标准接口和用于向存储器单元阵列输入数据和从存储器单元阵列输出数据的标准协议来读写操作参数。

    Contact plate for use in standardizing tester channels of a tester system and a standardization system having such a contact plate
    7.
    发明授权
    Contact plate for use in standardizing tester channels of a tester system and a standardization system having such a contact plate 有权
    用于测试仪系统的测试仪通道标准化的接触板和具有接触板的标准化系统

    公开(公告)号:US07323861B2

    公开(公告)日:2008-01-29

    申请号:US11065896

    申请日:2005-02-25

    申请人: Thorsten Bucksch

    发明人: Thorsten Bucksch

    IPC分类号: G01R31/28

    CPC分类号: G01R31/2889

    摘要: One embodiment of the invention provides a standardization module for use in standardizing tester channels of a tester unit using a standardization unit for making contact with contact faces which are connected to the tester channels and for standardizing the tester channels. The standardization module has a first surface on which first contact faces are arranged in such a way that contact can be made by a contact making card of the tester unit with the first contact faces in a defined fashion. The standardization module has a second surface on which second contact faces are arranged in such a way that contact can be made with the second contact faces using the standardization unit. Each of the first contact faces is respectively connected to one of the second contact faces.

    摘要翻译: 本发明的一个实施例提供了一种用于使用标准化单元标准化测试器单元的测试仪通道的标准化模块,该标准化单元与连接到测试仪通道的接触面接触并标准化测试仪通道。 标准化模块具有第一表面,第一接触面以这样的方式布置,使得可以通过测试器单元的接触卡以限定的方式与第一接触面进行接触。 标准化模块具有第二表面,第二接触面以这样的方式布置,使得可以使用标准化单元与第二接触面进行接触。 每个第一接触面分别连接到第二接触面中的一个。

    Apparatus and method for calibrating a semiconductor test system
    8.
    发明授权
    Apparatus and method for calibrating a semiconductor test system 失效
    用于校准半导体测试系统的装置和方法

    公开(公告)号:US07061227B2

    公开(公告)日:2006-06-13

    申请号:US10878681

    申请日:2004-06-29

    IPC分类号: G01R31/02

    CPC分类号: G01R31/3191

    摘要: A process and device for calibrating a semiconductor component test system includes a first connection, at which a corresponding signal, in particular a calibration signal can be input, and a second and third connection, at which the signal, in particular a calibration signal, can be emitted. The first connection is and/or can be connected via a corresponding line to a first switching apparatus, which is and/or can be connected to the second connection. A second switching apparatus is and/or can be connected to the third connection. Advantageously, the signal is then transferred to the second connection, and barred from the third connection by the first switching apparatus being closed and the second switching apparatus being opened.

    摘要翻译: 用于校准半导体部件测试系统的过程和设备包括第一连接,在该第一连接处可以输入相应的信号,特别是校准信号,以及第二和第三连接,在该第二连接处,信号,特别是校准信号可以在该连接 被排出。 第一连接和/或可以经由相应的线路连接到第一开关设备,第一开关设备是和/或可以连接到第二连接。 第二开关装置和/或可以连接到第三连接。 有利地,信号然后被传送到第二连接,并且被第一开关装置关闭并且第二开关装置打开的从第三连接被阻止。

    Calibration device for the calibration of a tester channel of a tester device and a test system
    9.
    发明申请
    Calibration device for the calibration of a tester channel of a tester device and a test system 失效
    用于校准测试仪器和测试系统的测试仪通道的校准装置

    公开(公告)号:US20050046436A1

    公开(公告)日:2005-03-03

    申请号:US10894942

    申请日:2004-07-20

    IPC分类号: G01R31/319 G01R31/26

    CPC分类号: G01R31/3191 G01R31/31905

    摘要: One embodiment of the invention provides a calibration device for the calibration of a tester channel of a tester device to which integrated components on a substrate wafer can be contact-connected for testing with electrical signals. The calibration device includes a connecting device and a planar contact carrier with a first contact area and a second contact area insulated from the first contact area, which can be electrically connected via the connecting device, the connecting device being suitable for connecting the first and second contact areas to the tester device, the first contact area being generally surrounded by the second contact area, so that, when a needle card connected to the tester device is placed onto the contact carrier of the calibration device, one of the contact-connecting needles of the needle card which is connected to the tester channel to be calibrated is placed onto the first contact area and a plurality or all of the further contact-connecting needles of the needle card at tester channels that are not to be calibrated are placed onto the second contact area.

    摘要翻译: 本发明的一个实施例提供了一种用于校准测试器设备的测试器通道的校准装置,衬底晶片上的集成部件可以与其接触连接以便用电信号进行测试。 校准装置包括连接装置和具有第一接触区域和与第一接触区域绝缘的第二接触区域的平面接触载体,所述第一接触区域可以经由连接装置电连接,所述连接装置适于连接第一和第二接触区域 所述第一接触区域通常被所述第二接触区域包围,使得当连接到所述测试器装置的针卡被放置在所述校准装置的接触载体上时,所述接触连接针 将连接到要校准的测试器通道的针卡放置在第一接触区域上,并且将未被校准的测试器通道处的针卡的多个或所有另外的接触连接针放置在 第二接触区域。

    Method and device for testing set-up time and hold time of signals of a circuit with clocked data transfer
    10.
    发明授权
    Method and device for testing set-up time and hold time of signals of a circuit with clocked data transfer 有权
    用于测试具有时钟数据传输的电路的信号的建立时间和保持时间的方法和装置

    公开(公告)号:US06754869B2

    公开(公告)日:2004-06-22

    申请号:US09909390

    申请日:2001-07-19

    IPC分类号: G06F1100

    摘要: For testing, a reference clock signal is applied to a first delay path having a fixed delay and a second delay path having a variable delay. The delay paths are connected to inputs of a clocked circuit to initiate data transfer and they apply a clock signal and a data signal, respectively. The variable delay is set within the range [tF−n&Dgr;t/2; tF+n&Dgr;t/2]. The fixed delay tF is at least n&Dgr;t/2. For calibration, the setting range of the variable delay and the fixed delay are each increased to the k-fold value and the variable delay is incremented in steps from n=0 until three phase changes are detected. The value of n at the first phase cycle completion corresponds to the variable delay for the set-up time and the value of n at the third phase cycle completion corresponds to the variable delay for the hold time.

    摘要翻译: 对于测试,参考时钟信号被施加到具有固定延迟的第一延迟路径和具有可变延迟的第二延迟路径。 延迟路径连接到时钟电路的输入以启动数据传输,并分别施加时钟信号和数据信号。 可变延迟设置在[tF-nDeltat / 2; tF + nDeltat / 2]。 固定延迟tF至少为nDeltat / 2。 对于校准,可变延迟和固定延迟的设置范围各自增加到k倍值,并且可变延迟以n = 0的步长增加,直到检测到三相变化。 第一相循环完成时n的值对应于建立时间的可变延迟,第三相循环完成时n的值对应于保持时间的可变延迟。