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公开(公告)号：US08747630B2
公开(公告)日：2014-06-10
申请号：US12130788
申请日：2008-05-30
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/086
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：在处理室中提供掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶。 该方法还可以包括在处理室中的靶上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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公开(公告)号：US08734621B2
公开(公告)日：2014-05-27
申请号：US11718628
申请日：2007-01-16
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/3414 , H01B1/08 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , Y02E10/50
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：提供在处理室（100）中掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶（110）。 该方法还可以包括在靶（110）上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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公开(公告)号：US20110084239A1
公开(公告)日：2011-04-14
申请号：US11718628
申请日：2007-01-16
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/3414 , H01B1/08 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , Y02E10/50
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：提供在处理室（100）中掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶（110）。 该方法还可以包括在靶（110）上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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4.发明申请Method for Producing High Carrier Concentration P-Type Transparent Conducting Oxides 失效生产高载体浓度P型透明导电氧化物的方法公开(公告)号：US20080118777A1
公开(公告)日：2008-05-22
申请号：US10553245
申请日：2002-04-02
申请人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
发明人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
IPC分类号： H01L21/00
CPC分类号： C23C16/407 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262
摘要： A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
摘要翻译： 一种用于生产没有共掺杂等离子体增强或高温的透明p型导电氧化物膜的方法，包括：a）将环境温度下的二烷基金属和载气中的饱和压力引入低压沉积室，以及b）引入 在单独的氧化剂或氧化剂中，在足以产生富含金属的条件以使得NO分解和原子氮结合到所形成的透明金属导电氧化物中的环境中。
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公开(公告)号：US08253012B2
公开(公告)日：2012-08-28
申请号：US12441707
申请日：2008-03-17
IPC分类号： H01B1/08 , H01L31/0224 , H01L35/14
摘要： A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
摘要翻译： 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中所述透明导电氧化物的特征在于电子迁移率改善为约42cm 2 / V-sec，同时保持高达-4.4e×1020cm-3的载流子密度。
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公开(公告)号：US20100171082A1
公开(公告)日：2010-07-08
申请号：US12441707
申请日：2008-03-17
摘要： A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
摘要翻译： 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中所述透明导电氧化物的特征在于电子迁移率改善为约42cm 2 / V-sec，同时保持高达-4.4e×1020cm-3的载流子密度。
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7.发明授权Method for producing high carrier concentration p-Type transparent conducting oxides 失效高载体浓度p型透明导电氧化物的制备方法公开(公告)号：US07517784B2
公开(公告)日：2009-04-14
申请号：US10553245
申请日：2002-04-02
申请人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
发明人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
IPC分类号： H01L21/44
CPC分类号： C23C16/407 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262
摘要： A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
摘要翻译： 一种用于生产没有共掺杂等离子体增强或高温的透明p型导电氧化物膜的方法，包括：a）将环境温度下的二烷基金属和载气中的饱和压力引入低压沉积室，以及b）引入 在单独的氧化剂或氧化剂中，在足以产生富含金属的条件以使得NO分解和原子氮结合到所形成的透明金属导电氧化物中的环境中。
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公开(公告)号：US06221495B1
公开(公告)日：2001-04-24
申请号：US08740347
申请日：1996-11-07
申请人： Xuanzhi Wu , Timothy J. Coutts
发明人： Xuanzhi Wu , Timothy J. Coutts
IPC分类号： B32B1500
CPC分类号： C23C14/5806 , C03C17/00 , C23C14/0629 , C23C14/086 , H01L31/073 , H01L31/1884 , Y02E10/543
摘要： A process for preparing thin Cd2SnO4 films. The process comprises the steps of RF sputter coating a Cd2SnO4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd2SnO4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd2SnO4 and CdS layers to a temperature sufficient to induce crystallization of the Cd2SnO4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd2SnO4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600° C., allowing the use of inexpensive soda lime glass substrates.
摘要翻译： 制备薄Cd2SnO4薄膜的方法。 该方法包括以下步骤：将Cd 2 SnO 4层RF溅射涂覆到第一衬底上; 用CdS层涂覆第二衬底; 使Cd2SnO4层与CdS层在无水和无氧环境中接触，并将第一和第二衬底以及Cd2SnO4和CdS层加热至足以使Cd2SnO4层结晶成均匀的单相尖晶石型 结构，足以使该Cd2SnO4层在该温度下完全结晶; 将第一和第二衬底冷却至室温; 以及将第一和第二基板和层彼此分离。 该过程可以在低于600℃的温度下进行，允许使用廉价的钠钙玻璃基材。
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9.发明授权Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making 失效包含锡酸镉透明导电膜的光伏器件及其制造方法
公开(公告)号：US5922142A
公开(公告)日：1999-07-13
申请号：US746798
申请日：1996-11-18
申请人： Xuanzhi Wu , Timothy J. Coutts , Peter Sheldon , Douglas H. Rose
发明人： Xuanzhi Wu , Timothy J. Coutts , Peter Sheldon , Douglas H. Rose
IPC分类号： C03C17/34 , C23C14/06 , C23C14/08 , C23C14/58 , H01B5/14 , H01L31/0224 , H01L31/04 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： C23C14/5806 , C03C17/00 , C23C14/0629 , C23C14/086 , C23C14/5846 , H01L31/022466 , H01L31/073 , H01L31/1884 , Y02E10/543
摘要： A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.
摘要翻译： 具有基板的光电器件，设置在作为前触点的所述基板上的Cd2SnO4层，设置在所述Cd2SnO4层上的两层或更多层半导体材料的薄膜和设置在所述半导体薄膜上的导电膜 材料以形成与所述薄膜的后电接触。 该器件通过将Cd 2 SnO 4层溅射到衬底上而形成，在半导体材料薄膜上沉积半导体材料薄膜到Cd2SnO4层上，并将导电膜沉积在薄膜上。
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10.发明授权Photovoltaic devices comprising zinc stannate buffer layer and method for making 有权包含锡酸锌缓冲层的光伏器件及其制造方法公开(公告)号：US06169246A
公开(公告)日：2001-01-02
申请号：US09149430
申请日：1998-09-08
申请人： Xuanzhi Wu , Peter Sheldon , Timothy J. Coutts
发明人： Xuanzhi Wu , Peter Sheldon , Timothy J. Coutts
IPC分类号： H01L3100
CPC分类号： H01L31/073 , H01L31/022466 , H01L31/0392 , H01L31/03925 , H01L31/1884 , Y02E10/543
摘要： A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
摘要翻译： 光电器件具有设置在半导体结结构和透明导电氧化物（TCO）层之间的缓冲层锌锡酸盐Zn2SnO4，以防止通过薄的半导体层与TCO形成局部接合，以防止通过半导体的蚀刻晶界分流 并且减轻应力并改善这些层之间的粘附。
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