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公开(公告)号：US20140231930A1
公开(公告)日：2014-08-21
申请号：US14183826
申请日：2014-02-19
CPC分类号： H01L29/78 , C23C16/18 , C23C16/45553 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L21/76871 , H01L29/4966
摘要： Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.
摘要翻译： 提供了沉积含铪或锆的金属合金膜的方法。 某些方法包括将衬底表面依次暴露于有机金属前体和包含M（BH 4）4的还原剂的交替流，以在衬底表面上产生金属合金膜，其中M选自铪和锆，并且有机金属前体含有 描述了包括包含硼的铜阻挡层，选自Hf和Zr的第一金属M和选自钽，钨，铜，钌，铑，钴和镍的第二金属N的栅叠层。 以及覆盖在铜屏障种子层上的铜层。
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2.发明申请Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium 审中-公开使用含有铪或锆的前体进行原子层沉积公开(公告)号：US20130113085A1
公开(公告)日：2013-05-09
申请号：US13289657
申请日：2011-11-04
IPC分类号： H01L21/314 , H01L29/00
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0337
摘要： Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH4)4 precursor, or Zr(BH4)4 precursor, respectively, as well as a co-reactant. The co-reactant can be selected to obtain certain film compositions. Co-reactants comprising an oxidant can be used to deposit oxygen into the film. Accordingly, also provided are films comprising a metal, boron and oxygen, wherein the metal comprises hafnium where a Hf(BH4)4 precursor is used, or zirconium, where a Zr(BH4)4 precursor is used.
摘要翻译： 提供了分别使用Hf（BH4）4前体或Zr（BH4）4前体以及共反应物沉积含铪或含锆膜的低温方法。 可以选择共反应物以获得某些膜组合物。 可以使用包含氧化剂的共反应物将氧沉积到膜中。 因此，还提供了包含金属，硼和氧的膜，其中金属包括使用Hf（BH4）4前体的铪或使用Zr（BH4）4前体的锆）。
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3.发明申请公开(公告)号：US20120088369A1
公开(公告)日：2012-04-12
申请号：US13267213
申请日：2011-10-06
IPC分类号： H01L21/306 , G03F7/20
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。 该过程可以重复多次以沉积多个硅光致抗蚀剂层。 还公开了在光致抗蚀剂中沉积光致抗蚀剂和形成图案的工艺，其利用含碳底层如无定形碳层。
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公开(公告)号：US20130115778A1
公开(公告)日：2013-05-09
申请号：US13591915
申请日：2012-08-22
申请人： Jun Xue , Jie Liu , Yongmei Chen , Timothy Michaelson , Paul Deaton , Timothy W. Weidman , Christopher S. Ngai
发明人： Jun Xue , Jie Liu , Yongmei Chen , Timothy Michaelson , Paul Deaton , Timothy W. Weidman , Christopher S. Ngai
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/31122 , H01L21/31144
摘要： Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO2, HfBxOy, ZrO2, ZrBxOy, to a plasma comprising BCl3 and argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.
摘要翻译： 提供蚀刻和/或图案化薄膜的方法。 某些方法包括将包含BCl 3和氩的等离子体中的HfO 2，HfB x O y，ZrO 2，ZrB x O y中的一种或多种的至少部分膜暴露在衬底上，以蚀刻掉所述至少部分膜。 某些其它方法涉及使用所述蚀刻膜的方法图案化衬底。
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5.发明授权公开(公告)号：US08536068B2
公开(公告)日：2013-09-17
申请号：US13267213
申请日：2011-10-06
IPC分类号： H01L21/31
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。 该过程可以重复多次以沉积多个硅光致抗蚀剂层。 还公开了在光致抗蚀剂中沉积光致抗蚀剂和形成图案的工艺，其利用含碳底层如无定形碳层。
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公开(公告)号：US20120088193A1
公开(公告)日：2012-04-12
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
IPC分类号： G03F7/20
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用可交联部分的前体，其在暴露于辐射时将交联。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。
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公开(公告)号：US08465903B2
公开(公告)日：2013-06-18
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用具有可暴露于辐射时交联的可交联部分的前体。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。
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8.发明申请METHODS AND SYSTEMS FOR CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS 审中-公开用于控制轨迹切削工具中关键尺寸的方法和系统公开(公告)号：US20090275149A1
公开(公告)日：2009-11-05
申请号：US12261732
申请日：2008-10-30
IPC分类号： H01L21/66
摘要： A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.
摘要翻译： 控制轨道光刻工具上的晶片临界尺寸（CD）均匀性的方法包括获得晶片的CD图。 CD映射包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热区。 该方法还包括基于CD数据点中的一个或多个来确定多个加热器区域中的第一加热器区域的CD值，并计算所确定的第一加热器区域的CD值与用于第一加热器区域的目标CD值之间的差值 第一加热区。 该方法还包括：部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化，并且部分地基于温度改变第一加热器区域的温度 变异。
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9.发明申请METHODS AND SYSTEMS FOR CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS 有权用于控制轨迹切削工具中关键尺寸的方法和系统公开(公告)号：US20080032426A1
公开(公告)日：2008-02-07
申请号：US11834518
申请日：2007-08-06
摘要： A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.
摘要翻译： 控制轨道光刻工具上的晶片临界尺寸（CD）均匀性的方法包括获得晶片的CD图。 CD映射包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热区。 该方法还包括基于CD数据点中的一个或多个来确定多个加热器区域中的第一加热器区域的CD值，并计算所确定的第一加热器区域的CD值与用于第一加热器区域的目标CD值之间的差值 第一加热区。 该方法还包括：部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化，并且部分地基于温度改变第一加热器区域的温度 变异。
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公开(公告)号：US20050019796A1
公开(公告)日：2005-01-27
申请号：US10847635
申请日：2004-05-17
申请人： Jason Meiring , Timothy Michaelson , C. Willson
发明人： Jason Meiring , Timothy Michaelson , C. Willson
CPC分类号： G06K7/1456 , G06K7/14 , G06K19/06037 , G06K19/06196
摘要： A system and method for recognition of images may include the use of alignment markers. The image recognized may be a pattern from an array, a character, a number, a shape, and/or irregular shapes. The pattern may be formed by elements in an array such as an identification marking and/or a sensor array. More particularly, the system and method relate to discriminating between images by accounting for the orientation of the image. The size and/or location of alignment markers may provide information about the orientation of an image. Information about the orientation of an image may reduce false recognitions. The system and method of image recognition may be used with identification markings, biosensors, micro-fluidic arrays, and/or optical character recognition systems.
摘要翻译： 用于识别图像的系统和方法可以包括使用对准标记。 识别的图像可以是来自阵列，字符，数字，形状和/或不规则形状的图案。 图案可以由诸如识别标记和/或传感器阵列的阵列中的元件形成。 更具体地，该系统和方法涉及通过考虑图像的取向来区分图像。 对准标记的尺寸和/或位置可以提供关于图像的取向的信息。 有关图像方向的信息可能会减少错误的识别。 图像识别的系统和方法可以与识别标记，生物传感器，微流体阵列和/或光学字符识别系统一起使用。
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