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公开(公告)号：US20130115778A1
公开(公告)日：2013-05-09
申请号：US13591915
申请日：2012-08-22
申请人： Jun Xue , Jie Liu , Yongmei Chen , Timothy Michaelson , Paul Deaton , Timothy W. Weidman , Christopher S. Ngai
发明人： Jun Xue , Jie Liu , Yongmei Chen , Timothy Michaelson , Paul Deaton , Timothy W. Weidman , Christopher S. Ngai
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/31122 , H01L21/31144
摘要： Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO2, HfBxOy, ZrO2, ZrBxOy, to a plasma comprising BCl3 and argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.
摘要翻译： 提供蚀刻和/或图案化薄膜的方法。 某些方法包括将包含BCl 3和氩的等离子体中的HfO 2，HfB x O y，ZrO 2，ZrB x O y中的一种或多种的至少部分膜暴露在衬底上，以蚀刻掉所述至少部分膜。 某些其它方法涉及使用所述蚀刻膜的方法图案化衬底。
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公开(公告)号：US20120088193A1
公开(公告)日：2012-04-12
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
IPC分类号： G03F7/20
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用可交联部分的前体，其在暴露于辐射时将交联。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。
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公开(公告)号：US08465903B2
公开(公告)日：2013-06-18
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用具有可暴露于辐射时交联的可交联部分的前体。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。
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公开(公告)号：US20140231930A1
公开(公告)日：2014-08-21
申请号：US14183826
申请日：2014-02-19
CPC分类号： H01L29/78 , C23C16/18 , C23C16/45553 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L21/76871 , H01L29/4966
摘要： Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.
摘要翻译： 提供了沉积含铪或锆的金属合金膜的方法。 某些方法包括将衬底表面依次暴露于有机金属前体和包含M（BH 4）4的还原剂的交替流，以在衬底表面上产生金属合金膜，其中M选自铪和锆，并且有机金属前体含有 描述了包括包含硼的铜阻挡层，选自Hf和Zr的第一金属M和选自钽，钨，铜，钌，铑，钴和镍的第二金属N的栅叠层。 以及覆盖在铜屏障种子层上的铜层。
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5.发明申请Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium 审中-公开使用含有铪或锆的前体进行原子层沉积公开(公告)号：US20130113085A1
公开(公告)日：2013-05-09
申请号：US13289657
申请日：2011-11-04
IPC分类号： H01L21/314 , H01L29/00
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0337
摘要： Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH4)4 precursor, or Zr(BH4)4 precursor, respectively, as well as a co-reactant. The co-reactant can be selected to obtain certain film compositions. Co-reactants comprising an oxidant can be used to deposit oxygen into the film. Accordingly, also provided are films comprising a metal, boron and oxygen, wherein the metal comprises hafnium where a Hf(BH4)4 precursor is used, or zirconium, where a Zr(BH4)4 precursor is used.
摘要翻译： 提供了分别使用Hf（BH4）4前体或Zr（BH4）4前体以及共反应物沉积含铪或含锆膜的低温方法。 可以选择共反应物以获得某些膜组合物。 可以使用包含氧化剂的共反应物将氧沉积到膜中。 因此，还提供了包含金属，硼和氧的膜，其中金属包括使用Hf（BH4）4前体的铪或使用Zr（BH4）4前体的锆）。
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6.发明申请公开(公告)号：US20120088369A1
公开(公告)日：2012-04-12
申请号：US13267213
申请日：2011-10-06
IPC分类号： H01L21/306 , G03F7/20
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。 该过程可以重复多次以沉积多个硅光致抗蚀剂层。 还公开了在光致抗蚀剂中沉积光致抗蚀剂和形成图案的工艺，其利用含碳底层如无定形碳层。
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7.发明授权公开(公告)号：US08536068B2
公开(公告)日：2013-09-17
申请号：US13267213
申请日：2011-10-06
IPC分类号： H01L21/31
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。 该过程可以重复多次以沉积多个硅光致抗蚀剂层。 还公开了在光致抗蚀剂中沉积光致抗蚀剂和形成图案的工艺，其利用含碳底层如无定形碳层。
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8.发明授权公开(公告)号：US07775508B2
公开(公告)日：2010-08-17
申请号：US11554954
申请日：2006-10-31
申请人： Kenric T. Choi , Pravin K. Narwankar , Shreyas S. Kher , Son T. Nguyen , Paul Deaton , Khai Ngo , Paul Chhabra , Alan H. Ouye , Dien-Yeh (Daniel) Wu
发明人： Kenric T. Choi , Pravin K. Narwankar , Shreyas S. Kher , Son T. Nguyen , Paul Deaton , Khai Ngo , Paul Chhabra , Alan H. Ouye , Dien-Yeh (Daniel) Wu
IPC分类号： B01F3/04
CPC分类号： C23C16/4481
摘要： A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.
摘要翻译： 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。
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9.发明授权
公开(公告)号：US06133152A
公开(公告)日：2000-10-17
申请号：US880194
申请日：1997-05-16
申请人： Benjamin Bierman , Meredith J. Williams , David S. Ballance , Brian Haas , Paul Deaton , James V. Tietz
发明人： Benjamin Bierman , Meredith J. Williams , David S. Ballance , Brian Haas , Paul Deaton , James V. Tietz
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/12 , C30B25/14 , H01L21/26 , H01L21/687 , H01L21/302
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4584 , C23C16/481 , C30B25/12 , C30B25/14 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.
摘要翻译： 一种用于隔离处理室中的旋转框架的装置，包括：可旋转地从所述旋转框架延伸的支撑筒; 以及从所述支撑筒延伸到至少一个基本上热，光学和机械地将所述共旋转边缘环延伸部上方的区域与所述同向旋转边缘环延伸部下方的区域隔开的共同旋转边缘环延伸。
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公开(公告)号：US6048403A
公开(公告)日：2000-04-11
申请号：US053286
申请日：1998-04-01
申请人： Paul Deaton , Meredith J. Williams
发明人： Paul Deaton , Meredith J. Williams
IPC分类号： B08B13/00 , C03C23/00 , C23C16/44 , C23C16/458 , H01L21/205 , H01L21/26 , H01L21/304 , H01L21/683 , C23C16/00 , C23F1/02
CPC分类号： C23C16/4583 , C23C16/4405
摘要： A substrate support, for example an edge ring, includes an upper ledge for supporting a first substrate, such as a semiconductor wafer, during a first process, and a lower ledge contiguous with the upper ledge for supporting a second substrate during a second process for cleaning the substrate support. A method of processing substrates supported by the edge ring in a thermal process chamber is also disclosed.
摘要翻译： 衬底支撑件，例如边缘环，包括用于在第一工艺期间支撑第一衬底（例如半导体晶片）的上凸缘，以及在用于在第二工艺期间支撑第二衬底的与所述上凸缘邻接的下凸缘 清洁基板支架。 还公开了一种在热处理室中处理由边缘环支撑的衬底的方法。
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