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公开(公告)号：US07235407B2
公开(公告)日：2007-06-26
申请号：US10855942
申请日：2004-05-27
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1616
摘要： A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
摘要翻译： 提供了多层Pr 1 x 1 x x MnO 3（PCMO）薄膜电容器和相关的沉积方法，用于形成双极开关 薄膜。 该方法包括：形成底部电极; 沉积纳米晶体PCMO层; 沉积多晶的PCMO层; 形成具有双极开关特性的多层PCMO膜; 并且形成覆盖PCMO膜的顶部电极。 如果多晶层沉积在纳米晶层之上，则可以用窄脉冲宽度，负电压脉冲写入高电阻。 PCMO膜可以使用窄脉冲宽度，正幅度脉冲复位为低电阻。 同样，如果纳米晶层沉积在多晶层上，则可以用窄脉冲宽度，正电压脉冲写入高电阻，并使用窄脉冲宽度，负幅度脉冲将其复位为低电阻。
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公开(公告)号：US07696550B2
公开(公告)日：2010-04-13
申请号：US11805177
申请日：2007-05-22
IPC分类号： H01L29/76
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1616
摘要： A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
摘要翻译： 提供多层PrxCa1-xMnO3（PCMO）薄膜电容器和相关的沉积方法用于形成双极开关薄膜。 该方法包括：形成底部电极; 沉积纳米晶体PCMO层; 沉积多晶PCMO层; 形成具有双极开关特性的多层PCMO膜; 并且形成覆盖PCMO膜的顶部电极。 如果多晶层沉积在纳米晶层之上，则可以用窄脉冲宽度，负电压脉冲写入高电阻。 PCMO膜可以使用窄脉冲宽度，正幅度脉冲复位为低电阻。 同样，如果纳米晶层沉积在多晶层上，则可以用窄脉冲宽度，正电压脉冲写入高电阻，并使用窄脉冲宽度，负幅度脉冲将其复位为低电阻。
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3.发明授权Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films 有权用于制造PrXCa1-xMnO3薄膜的低温MOCVD工艺公开(公告)号：US06972239B1
公开(公告)日：2005-12-06
申请号：US10923529
申请日：2004-08-20
CPC分类号： H01L45/1616 , C23C16/40 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method of fabricating a PCMO thin film at low temperature for use in a RRAM device includes preparing a PCMO precursor; preparing a substrate; placing the substrate into a MOCVD chamber; introducing the PCMO precursor into the MOCVD chamber to deposit a PCMO thin film on the substrate; maintaining a MOCVD vaporizer at between about 240° C. to 280° C. and maintaining the MOCVD chamber at a temperature of between about 300° C. to 400° C.; removing the PCMO thin-film bearing substrate from the MOCVD chamber; and completing the RRAM device.
摘要翻译： 在低温下制造用于RRAM器件的PCMO薄膜的方法包括制备PCMO前体; 制备底物; 将基板放置在MOCVD室中; 将PCMO前体引入MOCVD室以在衬底上沉积PCMO薄膜; 将MOCVD蒸发器保持在约240℃至280℃之间并将MOCVD室保持在约300℃至400℃之间的温度下; 从MOCVD室中取出PCMO薄膜轴承衬底; 并完成RRAM设备。
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4.发明授权Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films 有权用于铜金属薄膜化学气相沉积的取代的环烯烃新铜前体公开(公告)号：US06281377B1
公开(公告)日：2001-08-28
申请号：US09502425
申请日：2000-02-11
IPC分类号： C07F108
摘要： A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
摘要翻译： 形成铜金属薄膜的化学气相沉积挥发性铜前体的方法包括形成化学式为（nRm-环己烯）Cu（I）（hfac）或（nRm-环戊烯）Cu（I）的挥发性液体， （hfac），其中n，m = 1-6，其中R是烷基，例如甲基和乙基。
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公开(公告)号：US06764537B2
公开(公告)日：2004-07-20
申请号：US10453829
申请日：2003-06-02
IPC分类号： C23C1618
CPC分类号： H01L21/28556 , C23C16/18
摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.
摘要翻译： 铜基金属薄膜在基板上进行化学气相沉积的方法包括在化学气相沉积室中加热要沉积铜金属薄膜的基板; 蒸发含有铜金属的前体，其中前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中L是烯烃; 将蒸发的前体引入与加热的基底相邻的化学气相沉积室; 并将蒸发的前体冷凝到基底上，从而将铜金属沉积到基底上。 用于铜金属薄膜的化学气相沉积的铜金属前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中 L是从由1-戊烯，1-己烯和三甲基乙烯基硅烷组成的烯烃族中获得的烯烃。
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公开(公告)号：US06669870B2
公开(公告)日：2003-12-30
申请号：US09820024
申请日：2001-03-28
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cu（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。
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公开(公告)号：US06596344B2
公开(公告)日：2003-07-22
申请号：US09820227
申请日：2001-03-27
IPC分类号： C23C1614
CPC分类号： H01L21/28556 , C23C16/18
摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.
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公开(公告)号：US06245261B1
公开(公告)日：2001-06-12
申请号：US09210099
申请日：1998-12-11
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cub（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。
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公开(公告)号：US07633108B2
公开(公告)日：2009-12-15
申请号：US11893402
申请日：2007-08-15
申请人： Tingkai Li , Sheng Teng Hsu , Wei-Wei Zhuang , David R. Evans
发明人： Tingkai Li , Sheng Teng Hsu , Wei-Wei Zhuang , David R. Evans
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/31 , H01L27/2409 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method provides a substrate; forms an MSM bottom electrode overlying the substrate; forms a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forms an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).
摘要翻译： 提供了一种用于形成具有MSM限流器的金属/半导体/金属（MSM）限流器和电阻存储器单元的方法。 该方法提供基底; 形成覆盖衬底的MSM底部电极; 形成覆盖MSM底部电极的ZnOx半导体层，其中x在约1和约2之间的范围内; 并且形成覆盖半导体层的MSM顶部电极。 可以通过旋涂，直流（DC）溅射，射频（RF）溅射，金属有机化学气相沉积（MOCVD）或原子层沉积（ALD）等多种不同的工艺形成ZnO x半导体。
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公开(公告)号：US07625595B2
公开(公告)日：2009-12-01
申请号：US11403022
申请日：2006-04-11
申请人： Wei-Wei Zhuang , David R. Evans , Tingkai Li , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , David R. Evans , Tingkai Li , Sheng Teng Hsu
IPC分类号： B05D5/12
CPC分类号： H01L22/20 , H01L21/31691 , H01L22/14
摘要： A method of monitoring synthesis of PCMO precursor solutions includes preparing a PCMO precursor solution and withdrawing samples of the precursor solution at intervals during a reaction phase of the PCMO precursor solution synthesis. The samples of the PCMO precursor solution are analyzed by UV spectroscopy to determine UV transmissivity of the samples of the PCMO precursor solution and the samples used to form PCMO thin films. Electrical characteristics of the PCMO thin films formed from the samples are determined to identify PCMO thin films having optimal electrical characteristics. The UV spectral characteristics of the PCMO precursor solutions are correlated with the PCMO thin films having optimal electrical characteristics. The UV spectral characteristics are used to monitor synthesis of future batches of the PCMO precursor solutions, which will result in PCMO thin films having optimal electrical characteristics.
摘要翻译： 监测PCMO前体溶液合成的方法包括制备PCMO前体溶液，并在PCMO前体溶液合成反应期间间隔取出前体溶液样品。 通过紫外光谱分析PCMO前体溶液的样品，以确定PCMO前体溶液和用于形成PCMO薄膜的样品的UV透射率。 确定由样品形成的PCMO薄膜的电特性以鉴定具有最佳电特性的PCMO薄膜。 PCMO前体溶液的UV光谱特性与具有最佳电学特性的PCMO薄膜相关。 UV光谱特性用于监测未来批次的PCMO前体溶液的合成，这将导致具有最佳电特性的PCMO薄膜。
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