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1.发明申请公开(公告)号：US20110220874A1
公开(公告)日：2011-09-15
申请号：US13057535
申请日：2009-08-10
Applicant: Tobias Hanrath , James R. Engstrom
Inventor： Tobias Hanrath , James R. Engstrom
CPC classification number: H01L31/035281 , B82Y30/00 , C01B19/007 , C01G21/21 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/64 , H01L31/028 , H01L31/0312 , H01L31/1864 , Y02E10/547 , Y02P70/521
Abstract: A nanostructured composite material comprising semiconductor nanocrystals in a crystalline semiconductor matrix. Suitable nanocrystals include silicon, germanium, and silicon-germanium alloys, and lead salts such as PbS, PbSe, and PbTe. Suitable crystalline semiconductor matrix materials include Si and silicon-germanium alloys. A process for making the nanostructured composite materials. Devices comprising nanostructured composite materials.
Abstract translation: 纳米结构复合材料，其包含晶体半导体基质中的半导体纳米晶体。 合适的纳米晶体包括硅，锗和硅 - 锗合金，以及铅盐如PbS，PbSe和PbTe。 合适的晶体半导体基质材料包括Si和硅 - 锗合金。 制备纳米结构复合材料的方法。 包含纳米结构复合材料的器件。
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Patent Agency Ranking
公开(公告)号：US20110121257A1
公开(公告)日：2011-05-26
申请号：US12942569
申请日：2010-11-09
Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
Inventor： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
Abstract: A diode is provided which comprises a cathode, an anode, and at least one crystalline nanowire in electrical communication with said cathode and said anode. The crystalline nanowire comprises a group IV metal which is substantially straight and substantially free of nanoparticles.
Abstract translation: 提供二极管，其包括阴极，阳极和与所述阴极和所述阳极电连通的至少一个结晶纳米线。 结晶纳米线包括基本上直的基本上不含纳米颗粒的IV族金属。
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公开(公告)号：US07335259B2
公开(公告)日：2008-02-26
申请号：US10883966
申请日：2004-07-06
Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
Inventor： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
Abstract translation: 本发明提供基本上直的并且基本上不含纳米颗粒的纳米线及其制备方法。纳米线可以通过种子方法制备，其中与底物结合的纳米晶体用于促进纳米线的生长。 溶液中的纳米晶体也可用于制备本发明的纳米线。 超临界流体反应条件可以连续或半间歇的方法使用。
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公开(公告)号：US20050029678A1
公开(公告)日：2005-02-10
申请号：US10883966
申请日：2004-07-06
Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
Inventor： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
IPC: C30B29/06 , C30B29/08 , C30B29/60 , C30B29/62 , H01L21/208 , H01L23/49 , H01L29/06 , H01L21/20 , H01L21/477 , H01L23/48 , H01L29/40
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
Abstract translation: 本发明提供基本上直的并且基本上不含纳米颗粒的纳米线及其制备方法。纳米线可以通过种子方法制备，其中与底物结合的纳米晶体用于促进纳米线的生长。 溶液中的纳米晶体也可用于制备本发明的纳米线。 超临界流体反应条件可以连续或半间歇的方法使用。
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公开(公告)号：US07858181B2
公开(公告)日：2010-12-28
申请号：US12004276
申请日：2007-12-20
Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
Inventor： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
Abstract translation: 本发明提供基本上直的并且基本上不含纳米颗粒的纳米线及其制备方法。纳米线可以通过种子方法制备，其中与底物结合的纳米晶体用于促进纳米线的生长。 溶液中的纳米晶体也可用于制备本发明的纳米线。 超临界流体反应条件可以连续或半间歇的方法使用。
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公开(公告)号：US20080248304A1
公开(公告)日：2008-10-09
申请号：US12004276
申请日：2007-12-20
Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
Inventor： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
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