利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.022 秒)

    Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process
    2.
    发明授权
    Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process 失效
    在RF等离子体工艺中使用NH 3在GaAs上合成立方氮化镓的工艺

    公开(公告)号：US5834379A

    公开(公告)日：1998-11-10

    申请号：US680874

    申请日：1996-07-16

    申请人： James R. Shealy ,  James R. Engstrom ,  Yu-Hwa Lo

    发明人： James R. Shealy ,  James R. Engstrom ,  Yu-Hwa Lo

    IPC分类号： C23C8/36 ,  C23C11/08

    CPC分类号： C23C8/36

    摘要： A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.

    摘要翻译： 用于合成宽带隙材料，特别是GaN的方法采用NH 3等离子体辅助和热氮化将GaAs转化为GaN。 使用NH 3的热辅助氮化可用于在GaAs衬底上形成基本上厚度（约1微米）的立方体和六边形GaN的层。 NH 3的等离子体辅助氮化导致主要形成立方GaN，这是在光电器件中特别有用的形式。 优选地，使用非常薄的GaAs膜以允许在其上形成任何所需厚度的GaN层，而不考虑临界厚度限制。 薄膜优选地通过外延键合技术或通过底切蚀刻来形成。

    Growth of inorganic thin films using self-assembled monolayers as nucleation sites
    4.
    发明授权
    Growth of inorganic thin films using self-assembled monolayers as nucleation sites 有权
    使用自组装单层作为成核位点的无机薄膜的生长

    公开(公告)号：US07829150B2

    公开(公告)日：2010-11-09

    申请号：US11155453

    申请日：2005-06-17

    申请人： James R. Engstrom ,  Aravind S. Killampalli ,  Paul F. Ma

    发明人： James R. Engstrom ,  Aravind S. Killampalli ,  Paul F. Ma

    IPC分类号： B05D1/36 ,  B05D7/00 ,  C23C16/00

    CPC分类号： H01L21/02172 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02205 ,  H01L21/31604 ,  H01L51/56

    摘要： Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.

    摘要翻译： 使用有机过渡金属络合物和自组装单层作为有机表面制备无机 - 有机界面的系统和方法。 在一个实施例中，清洁硅晶片并与稳定的pirhana蚀刻反应以提供氧化物表面。 表面与烷基三氯硅烷的三氯甲硅烷基末端反应以制备自组装单体（SAM）。 烷基三氯硅烷具有通式R 1 -R R 1 SiCl 3，其中R 1是-OH，-NH 2，-COOH，-SH，COOCH 3，-CN，R是共轭烃，如（CH 2）n，其中n是 SAM的官能化端可以任选地适当地化学修饰，然后与含金属的物质如四（二甲基氨基）钛，Ti [N（CH 3）2] 4，（TDMAT）与 提供氮化钛层。