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公开(公告)号：US06538844B2
公开(公告)日：2003-03-25
申请号：US10083104
申请日：2002-02-27
申请人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
发明人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
IPC分类号： G11B5187
CPC分类号： G11B5/3903 , G11B5/112 , G11B5/1278 , G11B5/1871 , G11B5/3103 , G11B5/3106 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3967
摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head-including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.
摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将软磁体插入到它们之间的软磁性部件的情况下，形成在移动中的感应型写头包含磁极 介质和导体的方向，并且设置在磁阻头附近，以及支撑这些磁头的基板，本发明公开了一种复合磁头，其特征在于，包括磁头部件 构件具有凹部，并且来自介质的读/写操作由通过这些凹部插入的部分实现。
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2.发明授权公开(公告)号：US06521890B2
公开(公告)日：2003-02-18
申请号：US09346204
申请日：1999-07-01
申请人： Tohru Ishitani , Tsuyoshi Ohnishi , Megumi Aizawa , Hiroji Iwata
发明人： Tohru Ishitani , Tsuyoshi Ohnishi , Megumi Aizawa , Hiroji Iwata
IPC分类号： H01J37304
CPC分类号： H01J37/3045 , G01N23/04 , H01J2237/30438 , H01J2237/3045 , H01J2237/3174 , H01J2237/31749
摘要： When SIM image data D[n] of a mark is compared with reference SIM image data in calculating a displacement of machining position in the nth time, image data D[n−1] just before the nth time is employed as the reference image data and a position displacement of the image is obtained from matching processing of the two kinds of image data of D[n] and D[n−1] to calculate a displacement of machining position.
摘要翻译： 当在第n次计算加工位置的位移时，将标记的SIM图像数据D [n]与参考SIM图像数据进行比较，则将第n次之前的图像数据D [n-1]用作参考图像数据 并且通过对D [n]和D [n-1]的两种图像数据的匹配处理获得图像的位置位移，以计算加工位置的位移。
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3.发明授权Projecting type charged particle microscope and projecting type substrate inspection system 有权投影式带电粒子显微镜和突出型基片检查系统公开(公告)号：US06310341B1
公开(公告)日：2001-10-30
申请号：US09253456
申请日：1999-02-22
申请人： Hideo Todokoro , Tohru Ishitani , Yasutsugu Usami , Shunroku Taya , Hiroyuki Shinada , Taku Ninomiya , Tsuyoshi Ohnishi
发明人： Hideo Todokoro , Tohru Ishitani , Yasutsugu Usami , Shunroku Taya , Hiroyuki Shinada , Taku Ninomiya , Tsuyoshi Ohnishi
IPC分类号： H01J4944
摘要： An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.
摘要翻译： 从电子枪发射的照射电子束被能量过滤器偏转，并通过第一投射透镜和物镜，然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜，并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔，并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。
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4.发明授权
公开(公告)号：US5198672A
公开(公告)日：1993-03-30
申请号：US391292
申请日：1989-08-09
IPC分类号： G01R31/302
CPC分类号： G01R31/302
摘要： A device for generating voltage signals in a semiconductor device upon irradiation with a charged particle beam, wherein a circuit for converting a beam current of the irradiated charged particle beam into the voltage signals is constituted by a bipolar transistor and a load device contained in the semiconductor device, and a portion of the line pattern connected to the base of the bipolar transistor is irradiated with the charged particle beam, so that signals are generated at high speeds even by using a weak charged particle beam without permitting the device to be broken down.
摘要翻译： 一种用于在照射带电粒子束时在半导体器件中产生电压信号的装置，其中用于将照射的带电粒子束的束电流转换成电压信号的电路由双极晶体管和包含在半导体中的负载装置构成 器件，并且连接到双极晶体管的基极的线图案的一部分被带电粒子束照射，使得即使通过使用弱带电粒子束也不会使器件被分解而以高速产生信号。
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5.发明授权Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method 失效使用聚焦带电粒子束的样品或基板切割方法和利用切割方法的二次离子光谱分析方法
公开(公告)号：US4939364A
公开(公告)日：1990-07-03
申请号：US253558
申请日：1988-10-05
IPC分类号： H01J37/08 , C23F4/00 , G01Q30/10 , H01J37/305 , H01L21/30 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/3056
摘要： A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.
摘要翻译： 一种样品或基材切割方法，其通过从粒子束源产生聚焦的带电粒子束来在其深度方向上切割或加工样品或基底的预定部分，并用聚焦的带电量照射样品或基底的预定部分 公开了粒子束，其中选择带电粒子束的粒子种类，使得颗粒物质本身的熔点和样品或基底的颗粒物质的合金或化合物的熔点和成分原子的熔点为 不低于样品或基材温度的绝对温度的3/2倍。 还公开了二次离子质谱分析方法，其中使用带电粒子束作为探针，对从样品或基底的切割部分连续产生的二次带电离子进行质量分析。
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6.发明授权Narrow track thin film head including magnetic poles machined by focused ion beam etching 失效窄轨道薄膜头，包括通过聚焦离子束蚀刻加工的磁极公开(公告)号：US06307707B1
公开(公告)日：2001-10-23
申请号：US09598492
申请日：2000-06-22
申请人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
发明人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
IPC分类号： G11B5147
CPC分类号： G11B5/3903 , G11B5/112 , G11B5/1278 , G11B5/1871 , G11B5/3103 , G11B5/3106 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3967
摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.
摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将它们插入在它们之间的软磁性部件的感应型写头，包括在移动方向上形成的磁极 的介质和导体，并且设置在磁阻头附近以及支撑这些磁头的基板上，本发明公开了一种复合磁头，其特征在于，包括磁头构成部件的浮动面的一部分 具有凹槽，并且来自介质的读/写操作由这些凹槽插入的部分实现。
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公开(公告)号：US4936968A
公开(公告)日：1990-06-26
申请号：US324657
申请日：1989-03-17
IPC分类号： H01J37/305 , H01J37/317 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/3056
摘要： In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h.gtoreq.d to h
摘要翻译： 在通过使聚焦离子束偏转并将其扫描在材料表面上来实现溅射的离子束加工方法和装置中，材料表面上的束的直径d与由每个形成的台阶部分的高度h之间的关系 根据正在形成的孔的深度的增加，光束扫描从h> / = d变为h << d，从而控制再次沉积在孔的侧壁上的溅射粒子的数量。 该装置包括用于控制离子束偏转器和消隐电极的偏转控制器，以便改变上述d和h之间的关系。
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公开(公告)号：US07928377B2
公开(公告)日：2011-04-19
申请号：US11258035
申请日：2005-10-26
IPC分类号： G01N23/04
CPC分类号： H01J37/26 , G01N1/32 , H01J37/28 , H01J2237/206 , H01J2237/2802 , H01J2237/30466 , H01J2237/3174 , H01J2237/31745 , H01J2237/31749
摘要： It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.
摘要翻译： 通过用离子束照射样品和样品的高分辨率STEM观察，可以通过以高生成量的电子束照射几乎不移动样品来进行高精度的薄膜加工。 FIB照射系统具有与STEM观察电子束照射系统的照射轴几乎正交相交的照射轴。 样品布置在照射轴的交点处。 从STEM观察样品的薄膜平面提取样品的FIB加工面。 发射/散射光束检测器被布置在从电子束照射方向观察的电子束照射轴上样品的后方。
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9.发明授权公开(公告)号：US07915581B2
公开(公告)日：2011-03-29
申请号：US12353303
申请日：2009-01-14
申请人： Tohru Ishitani , Uki Kabasawa , Tsuyoshi Ohnishi
发明人： Tohru Ishitani , Uki Kabasawa , Tsuyoshi Ohnishi
CPC分类号： G01N23/225 , H01J37/3005 , H01J37/3056 , H01J2237/1536 , H01J2237/31745
摘要： In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.
摘要翻译： 在通过重复的FIB横截面处理的横截面的深度方向的SEM观察和用于校正观察视场偏离和聚焦偏差的SEM观察中，校正了当处理的横截面移动时发生的偏差 在其深度方向; 在处理之前计算关于横截面处理区域的表面的高度和倾斜的信息，使用上述信息，SEM视场中的偏差和对应于移动量的SEM观察中的偏差 的预测值，并且根据预测值来控制SEM。
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公开(公告)号：US20060097166A1
公开(公告)日：2006-05-11
申请号：US11258035
申请日：2005-10-26
CPC分类号： H01J37/26 , G01N1/32 , H01J37/28 , H01J2237/206 , H01J2237/2802 , H01J2237/30466 , H01J2237/3174 , H01J2237/31745 , H01J2237/31749
摘要： It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.
摘要翻译： 通过用离子束照射样品和样品的高分辨率STEM观察，可以通过以高生成量的电子束照射几乎不移动样品来进行高精度的薄膜加工。 FIB照射系统具有与STEM观察电子束照射系统的照射轴几乎正交相交的照射轴。 样品布置在照射轴的交点处。 从STEM观察样品的薄膜平面提取样品的FIB加工面。 发射/散射光束检测器被布置在从电子束照射方向观察的电子束照射轴上样品的后方。
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