公开(公告)号：US4939364A

公开(公告)日：1990-07-03

申请号：US253558

申请日：1988-10-05

申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Yoshimi Kawanami

发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Yoshimi Kawanami

IPC分类号： H01J37/08 ,  C23F4/00 ,  G01Q30/10 ,  H01J37/305 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/3056

摘要： A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.

摘要翻译： 一种样品或基材切割方法，其通过从粒子束源产生聚焦的带电粒子束来在其深度方向上切割或加工样品或基底的预定部分，并用聚焦的带电量照射样品或基底的预定部分 公开了粒子束，其中选择带电粒子束的粒子种类，使得颗粒物质本身的熔点和样品或基底的颗粒物质的合金或化合物的熔点和成分原子的熔点为 不低于样品或基材温度的绝对温度的3/2倍。 还公开了二次离子质谱分析方法，其中使用带电粒子束作为探针，对从样品或基底的切割部分连续产生的二次带电离子进行质量分析。

公开(公告)号：US4936968A

公开(公告)日：1990-06-26

申请号：US324657

申请日：1989-03-17

申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Yoshimi Kawanami

发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Yoshimi Kawanami

IPC分类号： H01J37/305 ,  H01J37/317 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/3056

摘要： In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h.gtoreq.d to h

摘要翻译： 在通过使聚焦离子束偏转并将其扫描在材料表面上来实现溅射的离子束加工方法和装置中，材料表面上的束的直径d与由每个形成的台阶部分的高度h之间的关系 根据正在形成的孔的深度的增加，光束扫描从h> / = d变为h << d，从而控制再次沉积在孔的侧壁上的溅射粒子的数量。 该装置包括用于控制离子束偏转器和消隐电极的偏转控制器，以便改变上述d和h之间的关系。

公开(公告)号：US5120925A

公开(公告)日：1992-06-09

申请号：US519402

申请日：1990-05-04

申请人： Tsuyoshi Ohnishi ,  Yoshimi Kawanami ,  Yuuichi Madokoro ,  Kaoru Umemura ,  Tohru Ishitani

发明人： Tsuyoshi Ohnishi ,  Yoshimi Kawanami ,  Yuuichi Madokoro ,  Kaoru Umemura ,  Tohru Ishitani

IPC分类号： B23K15/00 ,  B23K26/00 ,  B23P21/00 ,  G03F1/72 ,  G03F1/74 ,  H01J37/317 ,  H01L21/00 ,  H01L21/302 ,  H01L21/82 ,  H01L25/04 ,  H01L25/16 ,  H01L25/18 ,  H01L27/01 ,  H01L41/09 ,  H05K13/04

CPC分类号： H01L21/67138 ,  H01L24/24 ,  H05K13/0486 ,  H01L2924/12042 ,  H01L2924/14

摘要： A method for device transplantation includes the conveyance of a microminiature device, which has been premanufactured, to a desired place located on a sample, observation and fabrication of the new device with a focused beam, and repair of passive elements or active elements located on the sample. Additionally, the new microminiature devices may be transplanted based on the observed results.

公开(公告)号：US5065034A

公开(公告)日：1991-11-12

申请号：US517313

申请日：1990-05-01

申请人： Yoshimi Kawanami ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Tooru Habu ,  Masahiro Yamaoka

发明人： Yoshimi Kawanami ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Tooru Habu ,  Masahiro Yamaoka

IPC分类号： H01J37/20 ,  H01J37/09

CPC分类号： H01J37/09 ,  H01J2237/0455 ,  H01J2237/0458

摘要： A charged particle beam apparatus is provided with an aperture device which includes a plurality of slit plates. Each of the slit plates includes a plurality of slits having different widths. The slit plates are superimposed in a direction of the axis of a charged particle beam so that the corresponding slits in the slit plates overlap to define an aperture which controls a beam current.

摘要翻译： 带电粒子束装置设置有包括多个狭缝板的孔装置。 每个狭缝板包括具有不同宽度的多个狭缝。 狭缝板在带电粒子束的轴线的方向上重叠，使得狭缝板中的相应狭缝重叠以限定控制束流的孔。

公开(公告)号：US5532494A

公开(公告)日：1996-07-02

申请号：US222945

申请日：1994-04-05

申请人： Yoshimi Kawanami ,  Tsuyoshi Ohnishi

发明人： Yoshimi Kawanami ,  Tsuyoshi Ohnishi

IPC分类号： H01J37/22 ,  G01N23/22 ,  G01Q10/00 ,  G01Q30/04 ,  G01Q30/20 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  G01N23/225 ,  H01J37/252

CPC分类号： G01N23/22 ,  H01J37/3005 ,  B82Y35/00 ,  H01J2237/22 ,  H01J2237/31742

摘要： A treatment and observation apparatus using a scanning probe observes a desired area of a sample, forms a first image, magnifies a part of the area to be observed of the sample to observe it, forms a second image, and relates addresses of pixels constituting the first image and addresses of pixels constituting the second image to absolute addresses on the sample. The pixels constituting the images correspond to the addresses on the sample, respectively, and accordingly the second image can be used to designate the area to be treated with the resolution of the second image. In another embodiment, a desired area of the sample is observed with the maximum magnification and its image data are stored. The image data are compressed and displayed on a display screen of the observed area. The stored image data are read out freely with reference to the display picture to form a display picture for designating the area to be treated.

摘要翻译： 使用扫描探针的处理和观察装置观察样品的期望区域，形成第一图像，放大要观察的样品的观察区域的一部分以观察它，形成第二图像，并且涉及构成 构成第二图像的像素的第一图像和地址到样本上的绝对地址。 构成图像的像素分别对应于样本上的地址，因此第二图像可以用于以第二图像的分辨率指定待处理的区域。 在另一个实施例中，以最大放大率观察样品的期望面积并存储其图像数据。 图像数据被压缩并显示在观察区域的显示屏幕上。 存储的图像数据参照显示图像自由地读出，以形成用于指定待处理区域的显示图像。

公开(公告)号：US06538844B2

公开(公告)日：2003-03-25

申请号：US10083104

申请日：2002-02-27

申请人： Hisashi Takano ,  Naoki Koyama ,  Hideo Tanabe ,  Eijin Moriwaki ,  Isamu Yuito ,  Kazuo Shiiki ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Toshio Kobayashi ,  Hideo Todokoro ,  Chiaki Ishikawa

发明人： Hisashi Takano ,  Naoki Koyama ,  Hideo Tanabe ,  Eijin Moriwaki ,  Isamu Yuito ,  Kazuo Shiiki ,  Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Toshio Kobayashi ,  Hideo Todokoro ,  Chiaki Ishikawa

IPC分类号： G11B5187

CPC分类号： G11B5/3903 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/3103 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3967

摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head-including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.

摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将软磁体插入到它们之间的软磁性部件的情况下，形成在移动中的感应型写头包含磁极 介质和导体的方向，并且设置在磁阻头附近，以及支撑这些磁头的基板，本发明公开了一种复合磁头，其特征在于，包括磁头部件 构件具有凹部，并且来自介质的读/写操作由通过这些凹部插入的部分实现。

公开(公告)号：US06521890B2

公开(公告)日：2003-02-18

申请号：US09346204

申请日：1999-07-01

申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Megumi Aizawa ,  Hiroji Iwata

发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Megumi Aizawa ,  Hiroji Iwata

IPC分类号： H01J37304

CPC分类号： H01J37/3045 ,  G01N23/04 ,  H01J2237/30438 ,  H01J2237/3045 ,  H01J2237/3174 ,  H01J2237/31749

摘要： When SIM image data D[n] of a mark is compared with reference SIM image data in calculating a displacement of machining position in the nth time, image data D[n−1] just before the nth time is employed as the reference image data and a position displacement of the image is obtained from matching processing of the two kinds of image data of D[n] and D[n−1] to calculate a displacement of machining position.

摘要翻译： 当在第n次计算加工位置的位移时，将标记的SIM图像数据D [n]与参考SIM图像数据进行比较，则将第n次之前的图像数据D [n-1]用作参考图像数据 并且通过对D [n]和D [n-1]的两种图像数据的匹配处理获得图像的位置位移，以计算加工位置的位移。

公开(公告)号：US06310341B1

公开(公告)日：2001-10-30

申请号：US09253456

申请日：1999-02-22

申请人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

发明人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

IPC分类号： H01J4944

CPC分类号： H01J37/28 ,  H01J37/05

摘要： An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.

摘要翻译： 从电子枪发射的照射电子束被能量过滤器偏转，并通过第一投射透镜和物镜，然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜，并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔，并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。

公开(公告)号：US5198672A

公开(公告)日：1993-03-30

申请号：US391292

申请日：1989-08-09

申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

IPC分类号： G01R31/302

CPC分类号： G01R31/302

摘要： A device for generating voltage signals in a semiconductor device upon irradiation with a charged particle beam, wherein a circuit for converting a beam current of the irradiated charged particle beam into the voltage signals is constituted by a bipolar transistor and a load device contained in the semiconductor device, and a portion of the line pattern connected to the base of the bipolar transistor is irradiated with the charged particle beam, so that signals are generated at high speeds even by using a weak charged particle beam without permitting the device to be broken down.

摘要翻译： 一种用于在照射带电粒子束时在半导体器件中产生电压信号的装置，其中用于将照射的带电粒子束的束电流转换成电压信号的电路由双极晶体管和包含在半导体中的负载装置构成 器件，并且连接到双极晶体管的基极的线图案的一部分被带电粒子束照射，使得即使通过使用弱带电粒子束也不会使器件被分解而以高速产生信号。

公开(公告)号：US07482586B2

公开(公告)日：2009-01-27

申请号：US11482094

申请日：2006-07-07

申请人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

发明人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

IPC分类号： G01N31/00 ,  G01N33/00 ,  G01N23/00 ,  G21K7/00 ,  G21K5/10 ,  H01J37/08

CPC分类号： G01N23/225 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/1536 ,  H01J2237/31745

摘要： In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.

摘要翻译： 在通过重复的FIB横截面处理的横截面的深度方向的SEM观察和用于校正观察视场偏离和聚焦偏差的SEM观察中，校正了当处理的横截面移动时发生的偏差 在其深度方向; 在处理之前计算关于横截面处理区域的表面的高度和倾斜的信息，使用上述信息，SEM视场中的偏差和对应于移动量的SEM观察中的偏差 的预测值，并且根据预测值来控制SEM。