摘要:
A photoresist 10 is exposed to light from behind a substrate by using as photomask a wiring electrodes 2 and 4 and a switching element 8 which are individually composed of an opaque member, whereby a passivation layer 9 for the switching element 8 is patterned. By virtue of this method, a photomask becomes unnecessary and jogs of the passivation layer 9 can be formed outside the transparent pixel electrode 7. Therefore, an unsatisfactory orientation of a liquid crystal can be made invisible without enlarging the black matrix of a counter substrate. Furthermore, since a passivation layer can be removed in portions not requiring the passivation layer, image-sticking can be reduced and the quality of displayed picture can be greatly improved. The present invention makes it possible to reduce the number of photomasks used for production of an actively addressing substrate and improve the picture quality of a liquid crystal display.
摘要:
A photoresist 10 is exposed to light from behind a substrate by using as photomask a wiring electrodes 2 and 4 and a switching element 8 which are individually composed of an opaque member, whereby a passivation layer 9 for the switching element 8 is patterned. By virtue of this method, a photomask becomes unnecessary and jogs of the passivation layer 9 can be formed outside the transparent pixel electrode 7. Therefore, an unsatisfactory orientation of a liquid crystal can be made invisible without enlarging the black matrix of a counter substrate. Furthermore, since a passivation layer can be removed in portions not requiring the passivation layer, image-sticking can be reduced and the quality of displayed picture can be greatly improved. The present invention makes it possible to reduce the number of photomasks used for production of an actively addressing substrate and improve the picture quality of a liquid crystal display.
摘要:
A method for driving a liquid crystal display unit is arranged to apply positive-polarity signals to drains of thin film transistors of active matrix liquid crystal elements during an interval of a 1/n field and to apply negative-polarity signals to the drains during an interval of a next 1/n field. This method does not need to invert a common electrode voltage V.sub.com and a signal voltage V.sub.D at each scan period (1H). This contributes to easier design of a voltage-alternating circuit for V.sub.D or V.sub.com and reduces flicker resulting from the inversed voltage on an overall screen.
摘要:
A high-speed scanning method uses a K(K.gtoreq.3)-number of semiconductor switch elements each having a first main electrode responsive to an input signal, a second main electrode, and a control electrode responsive to a control signal for controlling the transmissive and intransmissive states of said input signal from the first main electrode to the second main electrode; and capacitive loads connected respectively with the second main electrode of each of said K-number of semiconductor switch elements, for shifting one of the K-number of semiconductor switch elements sequentially with a predetermined period from the transmissive state to the intransmissive state or vice versa, wherein, the time, for which an arbitary L(K>L.gtoreq.2)-number of semiconductor switch elements of adjacent scans are rendered transmissive, and the time, for which the L-number of semiconductor switch elements are rendered intransmissive, are included in at least one frame period, to elongate the period for which the scanning signals fluctuate, thereby permitting use of low-frequency semiconductor switches.
摘要:
The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要:
To take measures against defects in the conduction by preventing shavings of the orientation film from getting into the terminal portion for liquid crystal display devices using an organic passivation film on a TFT substrate.Image signal lines 107 extend to a terminal portion. The image signal lines 107, excluding the terminal portion, are covered with an inorganic passivation film 108 and an organic passivation film 109. In the terminal portion, terminal portion through holes are created in the organic passivation film 109 and the inorganic passivation film 108, in order to make electrical connection possible. The terminal portion is covered with an ITO film 120 in order to protect the video signal lines 107. The taper angle θ in the organic passivation film 109 in the terminal portion through holes is 35 degrees or less, and the thickness of the organic passivation film 109 in the periphery of the terminal portion through holes is 300 nm to 600 nm, so that shavings of the orientation film can be prevented from getting into the terminal portion, and thus, defects in the conduction can be prevented.
摘要:
A liquid crystal display device includes first and second opposed facing substrates and liquid crystal sandwiched therebetween. The first substrate includes a thin film transistor having a first electrode thereof connected to a video signal line and a second electrode thereof connected to a pixel electrode, a first silicon nitride film, an organic insulation film, a capacitance electrode, and a second silicon nitride film. The second silicon nitride film is formed at a temperature lower than a forming temperature of the first silicon nitride film. The second electrode and the pixel electrode are connected to each other via a contact hole formed by the first and second silicon nitride films. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要:
In a liquid crystal display device with a reflective area and a transmissive area, a reflective electrode and a transmissive electrode are manufactured without an extra process.A metal layer that forms the reflective electrode and a transparent conductive film that forms the transmissive electrode are successively laminated on pixels, each having the transmissive area and the reflective area. A resist film is exposed to light followed by development to form a first pattern so as to simultaneously etch the metal layer and the transparent conductive film. Thereafter, ashing is used to form a second pattern in the resist film so as to etch the metal layer. An organic resin layer is used as a mask to form a contact hole.
摘要:
The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要:
A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.