-
公开(公告)号：US11149342B2
公开(公告)日：2021-10-19
申请号：US16783282
申请日：2020-02-06
Applicant: Tokyo Electron Limited
Inventor： Junichi Takei , Hiroshi Sone
Abstract: A sputtering apparatus includes: a target disposed on a ceiling of a processing container capable of being depressurized; a gas inlet configured to supply a sputtering gas into the processing container; a first shield disposed around the target and configured to prevent deposition of a film around the target; and a second shield disposed in the processing container to cover an inner wall of the ceiling with a space from the ceiling, and including an opening in a portion corresponding to the target.
-
公开(公告)号：US10309005B2
公开(公告)日：2019-06-04
申请号：US15032688
申请日：2014-08-28
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yasuhiko Kojima , Hiroshi Sone , Atsushi Gomi , Kanto Nakamura , Toru Kitada , Yasunobu Suzuki , Yusuke Suzuki , Koichi Takatsuki , Tatsuo Hirasawa , Keisuke Sato , Chiaki Yasumuro , Atsushi Shimada
IPC: H01J37/34 , H01J37/32 , C23C14/35 , C23C14/16 , C23C14/08 , C23C14/00 , H01L43/12 , H01L43/10 , H01L43/08
Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.
-
公开(公告)号：US11551918B2
公开(公告)日：2023-01-10
申请号：US16883543
申请日：2020-05-26
Applicant: Tokyo Electron Limited
Inventor： Kenichi Imakita , Yasuhiko Kojima , Atsushi Gomi , Hiroyuki Yokohara , Hiroshi Sone
Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.
-
公开(公告)号：US10381258B2
公开(公告)日：2019-08-13
申请号：US15363141
申请日：2016-11-29
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takuya Umise , Hiroshi Sone , Naoyuki Suzuki
IPC: H01L21/687
Abstract: In a processing apparatus according to one embodiment, a stage is installed inside a process chamber. The stage has a plurality of through-holes formed therein, which corresponds to a plurality of lift pins. The plurality of lift pins is supported by a spline shaft through a support body. The spline shaft is supported by a spline bearing such that the spline shaft is vertically moved. The plurality of lift pins is biased upward by a spring member through the spline shaft. The spline shaft, the spline bearing, and the spring member are installed in an outer space separated from a depressurizable inner space of the process chamber.
-
公开(公告)号：US20190169737A1
公开(公告)日：2019-06-06
申请号：US16202238
申请日：2018-11-28
Applicant: Tokyo Electron Limited
Inventor： Koji Maeda , Hiroyuki Yokohara , Hiroshi Sone , Tetsuya Miyashita
Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.
-
Patent Agency Ranking
公开(公告)号：US11193200B2
公开(公告)日：2021-12-07
申请号：US16202238
申请日：2018-11-28
Applicant: Tokyo Electron Limited
Inventor： Koji Maeda , Hiroyuki Yokohara , Hiroshi Sone , Tetsuya Miyashita
Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.
-
公开(公告)号：US20200255935A1
公开(公告)日：2020-08-13
申请号：US16783282
申请日：2020-02-06
Applicant: Tokyo Electron Limited
Inventor： Junichi Takei , Hiroshi Sone
Abstract: A sputtering apparatus includes: a target disposed on a ceiling of a processing container capable of being depressurized; a gas inlet configured to supply a sputtering gas into the processing container; a first shield disposed around the target and configured to prevent deposition of a film around the target; and a second shield disposed in the processing container to cover an inner wall of the ceiling with a space from the ceiling, and including an opening in a portion corresponding to the target.
-
公开(公告)号：US20190390326A1
公开(公告)日：2019-12-26
申请号：US16442721
申请日：2019-06-17
Applicant: Tokyo Electron Limited
Inventor： Junichi Takei , Naoyuki Suzuki , Hiroshi Sone , Shinji Orimoto
Abstract: A substrate stage includes: a shaft rotatably disposed with respect to a bottom surface of a processing container; a base provided on the shaft; and a horizontal mover attached to the base and configured to move a substrate in the processing container in a horizontal direction with respect to the bottom surface.
-
公开(公告)号：US11282733B2
公开(公告)日：2022-03-22
申请号：US16521042
申请日：2019-07-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuuki Motomura , Hiroshi Sone , Yasuyuki Kagaya , Naoyuki Suzuki
IPC: H01L21/683 , C23C14/50 , H01L21/687
Abstract: There is provided a stage mechanism, including: an electrostatic chuck having a conductive film formed on a front surface thereof, the conductive film configured to make electrically contact with a rear surface of a substrate; a conductive member electrically connected to the conductive film and formed to extend to a rear surface of the electrostatic chuck; and a moving member electrically connected to the conductive member via a connecting member and configured to move between a first position connected to a ground potential and a second position not connected to the ground potential.
-
公开(公告)号：US10748750B2
公开(公告)日：2020-08-18
申请号：US16208391
申请日：2018-12-03
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroaki Chihaya , Hiroshi Sone
Abstract: A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.015 seconds)
