-
公开(公告)号：US20190169737A1
公开(公告)日：2019-06-06
申请号：US16202238
申请日：2018-11-28
Applicant: Tokyo Electron Limited
Inventor： Koji Maeda , Hiroyuki Yokohara , Hiroshi Sone , Tetsuya Miyashita
Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.
-
公开(公告)号：US12163215B2
公开(公告)日：2024-12-10
申请号：US17631188
申请日：2020-07-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Koji Maeda , Atsushi Shimada , Katsushi Oikawa , Tetsuya Miyashita
Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.
-
公开(公告)号：US11532784B2
公开(公告)日：2022-12-20
申请号：US17193545
申请日：2021-03-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Manabu Nakagawasai , Koji Maeda , Shinji Orimoto , Motoi Yamagata
Abstract: A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.
-
公开(公告)号：US11417504B2
公开(公告)日：2022-08-16
申请号：US16660696
申请日：2019-10-22
Applicant: Tokyo Electron Limited
Inventor： Manabu Nakagawasai , Naoyuki Suzuki , Shinji Orimoto , Hiroyuki Yokohara , Motoi Yamagata , Koji Maeda
IPC: H01J37/32 , C23C14/34 , C23C14/50 , C23C14/54 , H01L21/683 , H01F41/32 , H01L43/12 , H01J37/34 , H01L21/673
Abstract: A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a cold heat transfer body fixedly disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body and cooled to an extremely low temperature by a chiller disposed below the cold heat transfer body, and cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage. The stage device further includes a stage support configured to rotatably support the stage and formed in a cylindrical shape to surround an upper part of the cold heat transfer body wherein the stage support has a vacuum insulation structure, and a rotation part configured to support the stage support and rotated by a driving mechanism while being sealed with magnetic fluid.
-
公开(公告)号：US11193200B2
公开(公告)日：2021-12-07
申请号：US16202238
申请日：2018-11-28
Applicant: Tokyo Electron Limited
Inventor： Koji Maeda , Hiroyuki Yokohara , Hiroshi Sone , Tetsuya Miyashita
Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.
-
Patent Agency Ranking
公开(公告)号：US11309199B2
公开(公告)日：2022-04-19
申请号：US16919888
申请日：2020-07-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Keita Horiuchi , Koji Maeda , Morihiro Takanashi
IPC: H01L21/67 , B65G47/90 , H01L21/687
Abstract: A substrate transfer apparatus for transferring a substrate includes a plurality of vacuum transfer chambers, each having therein a substrate transfer mechanism for holding and transferring the substrate, and an intermediate chamber disposed between the vacuum transfer chambers adjacent to each other. When one of the vacuum transfer chambers adjacent to each other is set as a first vacuum transfer chamber and the other is set as a second vacuum transfer chamber, a first substrate loading/unloading port is disposed between the intermediate chamber and the first vacuum transfer chamber and a second substrate loading/unloading port is disposed between the intermediate chamber and the second vacuum transfer chamber. A gate valve is provided only for the second substrate loading/unloading port. Further, the first and the second substrate loading/unloading port have different height positions.
-
公开(公告)号：US10468237B2
公开(公告)日：2019-11-05
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
IPC: H01J37/32 , C23C14/56 , H01L21/67 , H01L21/677 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
-
公开(公告)号：US20180315585A1
公开(公告)日：2018-11-01
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
CPC classification number: H01J37/32733 , C23C14/566 , C23C14/568 , H01J37/32899 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
-
公开(公告)号：US11251027B2
公开(公告)日：2022-02-15
申请号：US16881693
申请日：2020-05-22
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tatsuo Hatano , Naoki Watanabe , Koji Maeda
Abstract: A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.
-
公开(公告)号：US10049860B2
公开(公告)日：2018-08-14
申请号：US14412258
申请日：2013-04-30
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.016 seconds)
