公开(公告)号：US12002667B2

公开(公告)日：2024-06-04

申请号：US17556025

申请日：2021-12-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Tetsuya Miyashita ,  Einstein Noel Abarra

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32715

Abstract: There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.

公开(公告)号：US11823879B2

公开(公告)日：2023-11-21

申请号：US17573368

申请日：2022-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Tetsuya Miyashita ,  Naoki Watanabe

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3429 ,  C23C14/3464 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J2237/332

Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

公开(公告)号：US20190169737A1

公开(公告)日：2019-06-06

申请号：US16202238

申请日：2018-11-28

Applicant: Tokyo Electron Limited

Inventor： Koji Maeda ,  Hiroyuki Yokohara ,  Hiroshi Sone ,  Tetsuya Miyashita

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/18

Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.

公开(公告)号：US20150136596A1

公开(公告)日：2015-05-21

申请号：US14402775

申请日：2013-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kanto Nakamura ,  Toru Kitada ,  Atsushi Gomi ,  Tetsuya Miyashita

IPC: H01J37/34

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3452

Abstract: A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.

Abstract translation: 磁控管溅射装置包括：设置成面对安装在真空容器中的安装部分上的基板的靶和安装在靶的背面并具有磁体阵列的磁体布置组件，磁控溅射装置包括：气体供应 配置成将等离子体产生气体供应到真空容器中的部分; 旋转机构，其构造成旋转所述安装部; 配置为向所述目标施加电压的电源部; 移动机构，其构造成在第一区域和第二区域之间移动磁体布置组件; 以及控制单元，被配置为输出控制信号，使得所述磁体布置组件的平均移动速度在所述第一区域和所述第二区域之间不同。

公开(公告)号：US11901166B2

公开(公告)日：2024-02-13

申请号：US17490574

申请日：2021-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya Miyashita ,  Kanto Nakamura ,  Yusuke Kikuchi

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  H01J37/3244 ,  H01J37/3455

Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

公开(公告)号：US11764092B2

公开(公告)日：2023-09-19

申请号：US17779873

申请日：2020-11-20

Applicant: Tokyo Electron Limited

Inventor： Tatsuo Hatano ,  Tetsuya Miyashita ,  Naoki Watanabe ,  Naoyuki Suzuki

IPC: H01L21/677 ,  B25J9/02 ,  B25J9/12 ,  B25J11/00 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67742 ,  B25J9/02 ,  B25J9/12 ,  B25J11/0095 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67167 ,  H01L21/67748 ,  H01L21/68707

Abstract: The substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein; a transfer unit movable on the planar motor; and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

公开(公告)号：US11542592B2

公开(公告)日：2023-01-03

申请号：US16246285

申请日：2019-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Naoki Watanabe ,  Tetsuya Miyashita ,  Hiroaki Chihaya

IPC: C23C14/22 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.

公开(公告)号：US20150187546A1

公开(公告)日：2015-07-02

申请号：US14403833

申请日：2013-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji Furukawa ,  Atsushi Gomi ,  Tetsuya Miyashita ,  Toru Kitada ,  Kanto Nakamura

IPC: H01J37/34 ,  C23C14/08 ,  C23C14/34

CPC classification number: C23C14/5853 ,  C23C14/08 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/564 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3447 ,  H01J2237/3322 ,  H01L43/12

Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

Abstract translation: 本发明提供一种真空处理装置，用于通过用等离子体离子溅射靶材在基板上形成金属膜，然后氧化金属膜，该装置包括：由具有吸附氧性质的材料构成的第一靶; 由金属组成的第二个目标; 配置为向所述目标施加电压的电源单元; 构造成防止从一个靶产生的颗粒粘附到另一个靶的快门; 屏蔽构件; 供氧单元，被配置为向安装在所述安装单元上的所述基板供给含氧气体; 以及控制单元，其被配置为执行向所述目标提供等离子体产生电压并溅射所述目标物并将所述含氧气体从所述供氧单元供应到所述基板。

公开(公告)号：US12033878B2

公开(公告)日：2024-07-09

申请号：US18230929

申请日：2023-08-07

Applicant: Tokyo Electron Limited

Inventor： Tatsuo Hatano ,  Tetsuya Miyashita ,  Naoki Watanabe ,  Naoyuki Suzuki

IPC: H01L21/677 ,  B25J9/02 ,  B25J9/12 ,  B25J11/00 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67742 ,  B25J9/02 ,  B25J9/12 ,  B25J11/0095 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67167 ,  H01L21/67748 ,  H01L21/68707

Abstract: A substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein, a transfer unit movable on the planar motor, and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

公开(公告)号：US10325801B2

公开(公告)日：2019-06-18

申请号：US15594699

申请日：2017-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi Mitsunaga ,  Tetsuya Miyashita ,  Tatsuo Hatano ,  Naoki Watanabe

IPC: C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  H01L21/67 ,  C23C16/458 ,  H01L21/687

Abstract: There is provided a mounting table system which includes: a mounting table rotatably installed so as to mount a substrate thereon; a plurality of heating parts installed in the mounting table, and configured to heat the mounting table; a single power source configured to supply an electric power to the plurality of heating parts; and a power switching part configured to switch from a first heating part among the plurality of heating parts to which the electric power is supplied from the single power source, to a second heating part among the plurality of heating parts, depending on a rotational angle of the mounting table.