公开(公告)号：US12077865B2

公开(公告)日：2024-09-03

申请号：US17820929

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Hideki Yuasa ,  Hiroyuki Ikuta ,  Yutaka Fujino ,  Makoto Wada ,  Hirokazu Ueda

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/56 ,  C23C16/345 ,  H01J37/32192

Abstract: A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US12060641B2

公开(公告)日：2024-08-13

申请号：US17577656

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Hirokazu Ueda ,  Hideki Yuasa ,  Yutaka Fujino ,  Yoshiyuki Kondo ,  Hiroyuki Ikuta

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45536 ,  C23C16/345 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02167 ,  H01L21/0217

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US12112921B2

公开(公告)日：2024-10-08

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Ikuta ,  Hirokazu Ueda ,  Yutaka Fujino

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US12129544B2

公开(公告)日：2024-10-29

申请号：US17916159

申请日：2021-03-29

Applicant: Tokyo Electron Limited

Inventor： Yoshiyuki Kondo ,  Yutaka Fujino ,  Hiroyuki Ikuta ,  Hideki Yuasa

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23C16/4405 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/3065

Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

公开(公告)号：US11615957B2

公开(公告)日：2023-03-28

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu Ueda ,  Jinwang Li ,  Masahiro Oka ,  Yoshimasa Watanabe ,  Yuuki Yamamoto ,  Hiroyuki Ikuta

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/28 ,  C23C16/455 ,  C23C16/50

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.