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公开(公告)号：US20200211865A1
公开(公告)日：2020-07-02
申请号：US16727007
申请日：2019-12-26
Applicant: Tokyo Electron Limited
Inventor： Takahiko Otsu , Kazuya Koyama , Takao Inada
Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.
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公开(公告)号：US11476130B2
公开(公告)日：2022-10-18
申请号：US16805898
申请日：2020-03-02
Applicant: Tokyo Electron Limited
Inventor： Kotaro Tsurusaki , Koji Yamashita , Kazuya Koyama , Kouzou Kanagawa
IPC: H01L21/67 , H01L21/687 , B05B1/00 , B05B13/02
Abstract: A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.
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公开(公告)号：US20200286754A1
公开(公告)日：2020-09-10
申请号：US16805898
申请日：2020-03-02
Applicant: Tokyo Electron Limited
Inventor： Kotaro Tsurusaki , Koji Yamashita , Kazuya Koyama , Kouzou Kanagawa
IPC: H01L21/67 , H01L21/687 , B05B13/02 , B05B1/00
Abstract: A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.
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公开(公告)号：US11742226B2
公开(公告)日：2023-08-29
申请号：US16727007
申请日：2019-12-26
Applicant: Tokyo Electron Limited
Inventor： Takahiko Otsu , Kazuya Koyama , Takao Inada
CPC classification number: H01L21/6715 , B05B12/1409 , B08B3/048 , H01L21/67023 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/67086
Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.
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公开(公告)号：US11087992B2
公开(公告)日：2021-08-10
申请号：US16778267
申请日：2020-01-31
Applicant: Tokyo Electron Limited
Inventor： Tsukasa Hirayama , Takao Inada , Hironobu Hyakutake , Kazuya Koyama , Hisashi Kawano
IPC: H01L21/311 , H01L21/3213 , H01L21/306 , B08B3/08 , H01L21/67 , H01L21/02
Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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Patent Agency Ranking
公开(公告)号：US20200286751A1
公开(公告)日：2020-09-10
申请号：US16804056
申请日：2020-02-28
Applicant: Tokyo Electron Limited
Inventor： Kazuya Koyama , Kotaro Tsurusaki , Koji Yamashita
IPC: H01L21/67 , H01L21/687
Abstract: A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates exposed from the liquid surfaces. The controller moves up the ejection position of the vapor of the organic solvent by the ejection unit as the plurality of substrates are moved up.
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公开(公告)号：US11723259B2
公开(公告)日：2023-08-08
申请号：US17336657
申请日：2021-06-02
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Jun Nonaka , Kazuya Koyama , Mitsunori Nakamori
Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.
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公开(公告)号：US10998198B2
公开(公告)日：2021-05-04
申请号：US16232645
申请日：2018-12-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuya Koyama
IPC: H01L21/311 , H01L21/67
Abstract: There is provided a substrate processing method for performing an etching processing by immersing a substrate in a processing liquid containing a chemical liquid and silicon, the substrate processing method including: a preparation step of setting a supply flow rate of the chemical liquid based on a replenishment amount of the chemical liquid and a replenishment amount of the silicon; and a replenishment step of supplying the chemical liquid at the set supply flow rate of the chemical liquid and dissolving a set replenishment amount of the silicon in the processing liquid.
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公开(公告)号：US20210335621A1
公开(公告)日：2021-10-28
申请号：US17367975
申请日：2021-07-06
Applicant: Tokyo Electron Limited
Inventor： Tsukasa Hirayama , Takao Inada , Hironobu Hyakutake , Kazuya Koyama , Hisashi Kawano
IPC: H01L21/311 , B08B3/08 , H01L21/67 , H01L21/02 , H01L21/3213 , H01L21/306
Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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公开(公告)号：US20200251343A1
公开(公告)日：2020-08-06
申请号：US16778267
申请日：2020-01-31
Applicant: Tokyo Electron Limited
Inventor： Tsukasa Hirayama , Takao Inada , Hironobu Hyakutake , Kazuya Koyama , Hisashi Kawano
IPC: H01L21/311 , B08B3/08 , H01L21/02 , H01L21/67
Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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