公开(公告)号：US20230137865A1

公开(公告)日：2023-05-04

申请号：US18049661

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Takayuki KARAKAWA ,  Kotaro MIYATANI ,  Hideo NAKAMURA ,  Katsushige HARADA ,  Yuichiro MOROZUMI

IPC: H01L27/108 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.

公开(公告)号：US20200040463A1

公开(公告)日：2020-02-06

申请号：US16526088

申请日：2019-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Shigeru NAKAJIMA ,  Katsushige HARADA ,  Yusuke TACHINO

IPC: C23F4/02 ,  C23C8/06 ,  C23C8/80

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US20130200491A1

公开(公告)日：2013-08-08

申请号：US13760210

申请日：2013-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Koji AKIYAMA ,  Shingo HISHIYA ,  Katsushige HARADA

IPC: H01L49/02

CPC classification number: H01L28/60 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02356 ,  H01L28/75 ,  H01L28/92

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract translation: 提供一种制造能够实现高介电常数性能和低漏电流的电容器的方法，电容器以及形成在电容器中使用的电介质膜的方法。 通过在基板上形成下电极层来制造电容器; 在下电极层上形成具有界面控制功能的第一TiO 2膜; 在第一TiO 2膜上形成ZrO 2基膜; 在形成ZrO 2基膜之后进行用于使ZrO 2基膜中的ZrO 2结晶的退火处理; 形成用作ZrO2基膜上的电容膜的第二TiO 2膜; 以及在所述第二TiO 2膜上形成上电极层。

公开(公告)号：US20160281224A1

公开(公告)日：2016-09-29

申请号：US14666635

申请日：2015-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsushige HARADA ,  Susumu TAKADA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/46

CPC classification number: C23C16/455 ,  C23C16/18 ,  C23C16/45546 ,  C23C16/46 ,  C23C16/463 ,  C23C16/52 ,  C23C16/56

Abstract: A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.

Abstract translation: 公开了使用有机金属化合物气体和氧化剂形成薄膜的方法和装置。 该方法包括使用有机金属化合物气体和第一氧化剂进行在待处理物体上形成薄膜的第一成膜工艺; 在反应室的内部被加热到预定温度的同时，进行将具有比第一氧化剂更强的氧化力的第二氧化剂供给到反应室中的退火处理; 以及使用所述有机金属化合物气体和所述第二氧化剂在所述第一薄膜形成工序中形成的薄膜上进行形成薄膜的第二成膜工序。

公开(公告)号：US20150279683A1

公开(公告)日：2015-10-01

申请号：US14670730

申请日：2015-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsushige HARADA

IPC: H01L21/285 ,  C23C16/52 ,  C23C16/46 ,  H01L49/02 ,  C23C16/455

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/32051 ,  H01L21/76841 ,  H01L28/60

Abstract: Provided is a method of forming a TiSiN film on a surface of an object to be processed, the method including: repeating a first cycle a first predetermined number of times, the first cycle including supplying Ti raw material gas containing Ti raw material into a processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Ti raw material gas is supplied into the processing chamber; and repeating a second cycle a second predetermined number of times after repeating the first cycle the first predetermined number of times, the second cycle including supplying Si raw material gas containing Si raw material into the processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Si raw material gas is supplied into the processing chamber, wherein the Si raw material gas comprises an amine-based Si raw material gas.

Abstract translation: 提供了一种在被处理物的表面上形成TiSiN膜的方法，该方法包括：将第一循环第一预定次数重复，所述第一循环包括将包含Ti原料的Ti原料气体供应到处理 在将Ti原料气体供给到处理室之后，向处理室供给含有氮化物的氮化气体; 并在第一次循环重复第一预定次数后重复第二次循环第二次循环，第二循环包括将含有Si原料的Si原料气体供入到处理室中，并将含有氮化物的氮化气体供应到 Si原料气体供给处理室后的处理室，Si原料气体包含胺系Si原料气体。

公开(公告)号：US20140367699A1

公开(公告)日：2014-12-18

申请号：US14474835

申请日：2014-09-02

Applicant: TOHOKU UNIVERSITY ,  FUJI ELECTRIC CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Akinobu TERAMOTO ,  Hiroshi KAMBAYASHI ,  Hirokazu UEDA ,  Yuichiro MOROZUMI ,  Katsushige HARADA ,  Kazuhide HASEBE ,  Tadahiro OHMI

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L21/28 ,  H01L23/00 ,  H01L29/51 ,  H01L29/778

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Abstract translation: 制造半导体器件的方法是制造包括构成半导体层的GaN（氮化镓）的半导体器件，并且包括形成栅极绝缘膜的步骤。 在该步骤中，通过使用微波等离子体在包含GaN的氮化物层上形成选自由SiO 2膜和Al 2 O 3膜构成的组中的至少一种膜，并且所形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20140161706A1

公开(公告)日：2014-06-12

申请号：US14102792

申请日：2013-12-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Katsushige HARADA

IPC: C23C16/30 ,  H01L29/51

CPC classification number: C23C16/308 ,  C23C16/401 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28229 ,  H01L29/517

Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.

Abstract translation: 提供一种在被处理物上形成第一和第二材料的金属化合物的膜的方法，所述第一和第二材料中的一种是金属，其包括：向所述物体供应含有所述第一材料的原料气体，使得 第一种材料被吸附到物体上; 向所述物体供给含有所述第二材料的原料气体，其中吸附有所述第一材料，使得所述第二材料被所述第一材料吸附在所述物体上被吸附; 以及将不同于所述第一和第二材料的第三材料供应到吸附到所述物体上的所述第一和第二材料上，使得所述第一至第三材料彼此化学结合。

公开(公告)号：US20140094027A1

公开(公告)日：2014-04-03

申请号：US14044119

申请日：2013-10-02

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Shuji AZUMO ,  Yusaku KASHIWAGI ,  Yuichiro MOROZUMI ,  Yu WAMURA ,  Katsushige HARADA ,  Kosuke TAKAHASHI ,  Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI

IPC: H01L29/40

CPC classification number: H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract translation: 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。