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公开(公告)号：US11600499B2
公开(公告)日：2023-03-07
申请号：US17255029
申请日：2019-06-13
Applicant: Tokyo Electron Limited
Inventor： Meitoku Aibara
Abstract: A substrate cleaning method according to an aspect of the present disclosure includes: supplying a film-forming treatment liquid containing a volatile component to a substrate to form a film on the substrate; supplying a peeling treatment liquid, which peels off a treatment film from the substrate, to the treatment film formed by solidifying or curing the film-forming treatment liquid on the substrate due to volatilization of the volatile component; and supplying a hydrophobic liquid, which hydrophobizes the substrate, to the substrate to which the peeling treatment liquid has been supplied.
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公开(公告)号：US09768039B2
公开(公告)日：2017-09-19
申请号：US14084839
申请日：2013-11-20
Applicant: Tokyo Electron Limited
Inventor： Kazuhiro Aiura , Norihiro Ito , Hidetoshi Nakao , Kazuyoshi Shinohara , Satoru Tanaka , Yuki Yoshida , Meitoku Aibara
IPC: H01L21/67 , H01L21/687
CPC classification number: H01L21/67051 , H01L21/68735
Abstract: A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate.
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公开(公告)号：US20140352730A1
公开(公告)日：2014-12-04
申请号：US14291494
申请日：2014-05-30
Applicant: Tokyo Electron Limited
Inventor： Yoshihiro Kai , Yoshinori Ikeda , Kazuyoshi Shinohara , Tetsuya Oda , Satoru Tanaka , Yuki Yoshida , Meitoku Aibara
CPC classification number: B05B15/555 , C03C23/0075 , H01L21/67051 , H01L21/6715
Abstract: A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.
Abstract translation: 根据本公开的基板处理装置包括将处理液喷射到基板的第一和第二喷嘴; 移动机构，其移动所述第一和第二喷嘴; 以及清洁至少第二喷嘴的喷嘴清洁装置。 喷嘴清洁装置包括清洗槽和溢流槽。 清洗槽包括储存用于清洗第二喷嘴的清洗液的液体储存部分和从液体储存部分排出超过预定水平的清洗液体的溢流部分。 溢流槽设置在清洗槽附近，并接收从溢流部排出的清洗液，并将接收到的清洗液排出到外部。
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公开(公告)号：US20200303220A1
公开(公告)日：2020-09-24
申请号：US16892396
申请日：2020-06-04
Applicant: Tokyo Electron Limited
Inventor： Koji Kagawa , Meitoku Aibara
IPC: H01L21/67 , H01L21/02 , H01L21/683 , H01L21/673
Abstract: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.
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公开(公告)号：US10734255B2
公开(公告)日：2020-08-04
申请号：US15599067
申请日：2017-05-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kenji Sekiguchi , Itaru Kanno , Meitoku Aibara , Kouzou Tachibana
Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.
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Patent Agency Ranking
公开(公告)号：US20180330971A1
公开(公告)日：2018-11-15
申请号：US15972492
申请日：2018-05-07
Applicant: Tokyo Electron Limited
Inventor： Koji Kagawa , Meitoku Aibara
IPC: H01L21/67 , H01L21/673 , H01L21/683 , H01L21/02
CPC classification number: H01L21/67051 , H01L21/02041 , H01L21/673 , H01L21/683
Abstract: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.
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公开(公告)号：US09764345B2
公开(公告)日：2017-09-19
申请号：US14291494
申请日：2014-05-30
Applicant: Tokyo Electron Limited
Inventor： Yoshihiro Kai , Yoshinori Ikeda , Kazuyoshi Shinohara , Tetsuya Oda , Satoru Tanaka , Yuki Yoshida , Meitoku Aibara
CPC classification number: B05B15/555 , C03C23/0075 , H01L21/67051 , H01L21/6715
Abstract: A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.
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公开(公告)号：US11551941B2
公开(公告)日：2023-01-10
申请号：US16892396
申请日：2020-06-04
Applicant: Tokyo Electron Limited
Inventor： Koji Kagawa , Meitoku Aibara
IPC: H01L21/67 , H01L21/02 , H01L21/683 , H01L21/673
Abstract: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.
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公开(公告)号：US11367630B2
公开(公告)日：2022-06-21
申请号：US17007085
申请日：2020-08-31
Applicant: TOKYO ELECTRON LIMITED
Inventor： Miyako Kaneko , Keiji Tanouchi , Takehiko Orii , Itaru Kanno , Meitoku Aibara , Satoru Tanaka
Abstract: A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.
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公开(公告)号：US09953826B2
公开(公告)日：2018-04-24
申请号：US14539174
申请日：2014-11-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Miyako Kaneko , Keiji Tanouchi , Takehiko Orii , Itaru Kanno , Meitoku Aibara , Satoru Tanaka
CPC classification number: H01L21/0206 , H01L21/02052 , H01L21/02057 , H01L21/67051
Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.
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