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    Plasma etching method
    1.
    发明授权
    Plasma etching method 有权

    公开(公告)号：US09779962B2

    公开(公告)日：2017-10-03

    申请号：US14956719

    申请日：2015-12-02

    Applicant: Tokyo Electron Limited

    Inventor： Takao Funakubo ,  Shinichi Kozuka ,  Yuta Seya ,  Aritoshi Mitani

    IPC: H01L21/3065 ,  H01L21/326 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31122 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/31116

    Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

    Plasma etching method and plasma etching apparatus
    2.
    发明授权
    Plasma etching method and plasma etching apparatus 有权
    等离子体蚀刻方法和等离子体蚀刻装置

    公开(公告)号：US09177823B2

    公开(公告)日：2015-11-03

    申请号：US14073996

    申请日：2013-11-07

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yuta Seya

    IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3105

    CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/3105 ,  H01L21/31122 ,  H01L21/31144

    Abstract: A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object, etching a silicon oxide film by a plasma of a processing gas using the amorphous carbon film as a mask while removing the SiON film remaining on the etched amorphous carbon film by the plasma of the processing gas. The plasma etching method further includes modifying the amorphous carbon film by a plasma of a sulfur-containing gas or a hydrogen-containing gas while applying a negative DC voltage to an upper electrode containing silicon after the SiON film is removed from the amorphous carbon film, and etching the silicon oxide film again by the plasma of the processing gas using the modified amorphous carbon film as a mask.

    Abstract translation: 等离子体蚀刻方法包括：使用形成在目标物体上的具有预定图案的SiON膜作为掩模，用含氧气体的等离子体蚀刻非晶碳膜，用处理气体的等离子体蚀刻氧化硅膜 使用无定形碳膜作为掩模，同时通过处理气体的等离子体除去残留在蚀刻的非晶碳膜上的SiON膜。 等离子体蚀刻方法还包括在从无定形碳膜除去SiON膜之后，通过含硫气体或含氢气体的等离子体对非晶碳膜进行改性，同时向含硅的上部电极施加负的DC电压， 并且使用改性的非晶碳膜作为掩模，通过处理气体的等离子体再次蚀刻氧化硅膜。

    Method of processing target object
    3.
    发明授权
    Method of processing target object 有权

    公开(公告)号：US10707088B2

    公开(公告)日：2020-07-07

    申请号：US15673621

    申请日：2017-08-10

    Applicant: Tokyo Electron Limited

    Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

    IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

    Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

    Method for processing workpiece
    4.
    发明授权
    Method for processing workpiece 有权

    公开(公告)号：US10692726B2

    公开(公告)日：2020-06-23

    申请号：US16315812

    申请日：2017-07-04

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

    IPC: H01L21/3065 ,  H05H1/46 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

    Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

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