公开(公告)号：US11069512B2

公开(公告)日：2021-07-20

申请号：US15671906

申请日：2017-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Okabe ,  Takashi Mochizuki ,  Hideaki Yamasaki ,  Nagayasu Hiramatsu ,  Kazuki Dempoh

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/509 ,  C23C16/14 ,  C23C16/56 ,  H01L21/768 ,  C23C16/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/285

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

公开(公告)号：US12027344B2

公开(公告)日：2024-07-02

申请号：US17974193

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Shinya Iwashita ,  Ayuta Suzuki ,  Takahiro Shindo ,  Kazuki Dempoh ,  Tatsuo Matsudo ,  Yasushi Morita ,  Takamichi Kikuchi ,  Tsuyoshi Moriya

IPC: C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/67

CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32568 ,  H01L21/67253 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US11208724B2

公开(公告)日：2021-12-28

申请号：US15973331

申请日：2018-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Dempoh

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/509 ,  C23C16/505

Abstract: A film forming apparatus includes a mounting table on which a substrate is mounted; a ceiling plate facing the mounting table, the ceiling plate defining a processing space between the ceiling plate and mounting table; and a gas supply mechanism configured to supply a source gas to the processing space horizontally with respect to the substrate. A facing surface of the ceiling plate or a facing surface of the mounting table is inclined such that a gap between the facing surfaces of the mounting table and the ceiling plate becomes wider at a downstream side than at an upstream side in a flow direction of the source gas.