公开(公告)号：US20190355901A1

公开(公告)日：2019-11-21

申请号：US16526165

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  H01F41/34 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01J37/32 ,  G11C11/16 ,  G11B5/84

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20200243759A1

公开(公告)日：2020-07-30

申请号：US16756835

申请日：2018-10-15

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/02 ,  H01L21/67 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16 ,  H01F41/34

Abstract: In a method of etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In the method of etching, a plasma processing apparatus is used. A chamber body of the plasma processing apparatus provides an internal space. In the method of etching, a workpiece is accommodated in the internal space. Next, the multilayer film is etched by plasma of a first gas generated in the internal space. The first gas includes carbon and a rare gas and does not include hydrogen. Next, the multilayer film is further etched by plasma of a second gas generated in the internal space. The second gas includes oxygen and a rare gas and does not include carbon and hydrogen.

公开(公告)号：US20180182957A1

公开(公告)日：2018-06-28

申请号：US15841998

申请日：2017-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/10 ,  H01L21/02

CPC classification number: H01L43/12 ,  H01L21/02252 ,  H01L43/10

Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.

公开(公告)号：US20190109282A1

公开(公告)日：2019-04-11

申请号：US16151689

申请日：2018-10-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/02 ,  H01F41/34 ,  H01F10/32

Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.

公开(公告)号：US20180190500A1

公开(公告)日：2018-07-05

申请号：US15740394

申请日：2016-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG ,  Tamotsu MORIMOTO

IPC: H01L21/3065 ,  H01L43/12 ,  H01L43/08 ,  C23F4/00

Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

公开(公告)号：US20170346001A1

公开(公告)日：2017-11-30

申请号：US15605553

申请日：2017-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer, on the underlying film subjected to ashing; and performing plasma etching on the multilayer film by using plasma of a hydrogen-containing gas.

公开(公告)号：US20170200886A1

公开(公告)日：2017-07-13

申请号：US15327434

申请日：2015-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tamotsu MORIMOTO ,  Song yun KANG

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L27/105 ,  H01L43/00 ,  H01L43/08 ,  H01L43/10

Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.

公开(公告)号：US20230371242A1

公开(公告)日：2023-11-16

申请号：US18029660

申请日：2021-10-04

Applicant: Tokyo Electron Limited

Inventor： Song yun KANG ,  Hyuck Soo YANG

IPC: H10B12/00 ,  H01L29/78

CPC classification number: H10B12/482 ,  H10B12/05 ,  H10B12/488 ,  H10B12/033 ,  H01L29/7827

Abstract: A method of making a semiconductor device that includes forming a vertical access transistor including forming bit lines in a first direction on a substrate, forming a polysilicon pillar as a sacrificial pillar over each bit line of the bit lines, forming a gate oxide on side surfaces of the polysilicon pillar, forming a word line, in a second direction, on the polysilicon pillar with the gate oxide interposed between the word line and the polysilicon pillar, the second direction being not substantially parallel to the first direction, after forming the word line, removing the polysilicon pillar so as to leave a vertical void in place of the polysilicon pillar, filling the vertical void with an oxide semiconductor that serves as a channel for the vertical access transistor; and forming a cell capacitor over the channel of the vertical access transistor.

公开(公告)号：US20220115589A1

公开(公告)日：2022-04-14

申请号：US17264213

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01J37/34

Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

公开(公告)号：US20200373480A1

公开(公告)日：2020-11-26

申请号：US16867826

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12

Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.