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    METHOD OF CLEANING PLASMA PROCESSING APPARATUS
    2.
    发明申请
    METHOD OF CLEANING PLASMA PROCESSING APPARATUS 审中-公开
    清洗等离子体加工装置的方法

    公开(公告)号：US20150247235A1

    公开(公告)日：2015-09-03

    申请号：US14635978

    申请日：2015-03-02

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hiroki KISHI ,  Mitsuru HASHIMOTO ,  Keiichi SHIMODA ,  Eiichi NISHIMURA ,  Akitaka SHIMIZU

    IPC: C23C14/30 ,  H01J37/305

    CPC classification number: C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

    Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

    Abstract translation: 提供了一种清洁方法，用于通过使用在下部结构的下部电极和上部电极之间产生的等离子体，通过蚀刻包含金属的金属层来去除在上部电极上形成的第一沉积物，处理室中的等离子体 等离子体处理装置。 该方法包括使离子与上部电极上形成的第一沉积物碰撞的步骤，以及通过所述碰撞产生并形成在下部结构上产生的第二沉积物的步骤。 此外，重复多次包括冲突步骤和去除步骤的循环。

    METHOD FOR ETCHING LAYER TO BE ETCHED
    4.
    发明申请
    METHOD FOR ETCHING LAYER TO BE ETCHED 有权
    蚀刻层被蚀刻的方法

    公开(公告)号：US20160276582A1

    公开(公告)日：2016-09-22

    申请号：US15030406

    申请日：2014-09-19

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuru HASHIMOTO ,  Takashi SONE ,  Eiichi NISHIMURA ,  Keiichi SHIMODA

    IPC: H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.

    Abstract translation: 提供了蚀刻工件的蚀刻目标层的方法。 工件在蚀刻目标层上具有掩模。 蚀刻目标层和掩模由各自的原料数量大于氩原子数的稀有气体的等离子体的蚀刻效率高于氩气等离子体的材料的蚀刻效率的材料形成。 掩模由熔点高于蚀刻目标层的材料形成。 该方法包括（a）将工件暴露于含有原子序数大于氩原子数的第一稀有气体的第一工艺气体的等离子体，和（b）将工件暴露于含有 具有原子序数小于氩原子数的第二稀有气体。

    METHOD FOR ETCHING COPPER LAYER
    6.
    发明申请
    METHOD FOR ETCHING COPPER LAYER 有权
    蚀刻铜层的方法

    公开(公告)号：US20150104951A1

    公开(公告)日：2015-04-16

    申请号：US14512638

    申请日：2014-10-13

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Eiichi NISHIMURA ,  Keiichi SHIMODA ,  Kei NAKAYAMA

    IPC: H01L21/3065 ,  H01L21/308

    CPC classification number: C23F4/00 ,  H01L21/32136 ,  H01L21/32139

    Abstract: Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.

    Abstract translation: 提供一种蚀刻铜层的方法。 该方法包括在容纳包含铜层的被处理物和在铜层上形成的金属掩模的处理容器内产生处理气体的等离子体。 金属面具包含钛。 此外，处理气体包括CH 4气体，氧气和惰性气体。 在示例性实施例中，金属掩模可以包括由TiN制成的层。

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