公开(公告)号：US20200243759A1

公开(公告)日：2020-07-30

申请号：US16756835

申请日：2018-10-15

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/02 ,  H01L21/67 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16 ,  H01F41/34

Abstract: In a method of etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In the method of etching, a plasma processing apparatus is used. A chamber body of the plasma processing apparatus provides an internal space. In the method of etching, a workpiece is accommodated in the internal space. Next, the multilayer film is etched by plasma of a first gas generated in the internal space. The first gas includes carbon and a rare gas and does not include hydrogen. Next, the multilayer film is further etched by plasma of a second gas generated in the internal space. The second gas includes oxygen and a rare gas and does not include carbon and hydrogen.

公开(公告)号：US20180182957A1

公开(公告)日：2018-06-28

申请号：US15841998

申请日：2017-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/10 ,  H01L21/02

CPC classification number: H01L43/12 ,  H01L21/02252 ,  H01L43/10

Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.

公开(公告)号：US20190355901A1

公开(公告)日：2019-11-21

申请号：US16526165

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  H01F41/34 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01J37/32 ,  G11C11/16 ,  G11B5/84

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20220320423A1

公开(公告)日：2022-10-06

申请号：US17656536

申请日：2022-03-25

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Hiroki MAEHARA

IPC: H01L43/12 ,  H01L27/22 ,  H01J37/32

Abstract: An etching method of etching a wafer by sputtering using ions in plasma includes accommodating the wafer in an internal space of a plasma processing apparatus, and etching a multilayer film by sputtering using ions. The wafer includes a multilayer film containing a non-volatile material and a mask layer on a surface of the multilayer film, and an exposed space of a region not covered by the mask layer. An aspect ratio h/D obtained by dividing a height h of the mask layer by a distance D between two adjacent sidewalls of the mask layer satisfies a condition: h/D≥1/(tan (φ)−tan (θ)). θ indicates an inclination angle of the sidewalls with a vertical surface perpendicular to the surface. φ indicates an upper limit of an incidence angle of ions on the vertical surface. φ is larger than θ.

公开(公告)号：US20190109282A1

公开(公告)日：2019-04-11

申请号：US16151689

申请日：2018-10-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/02 ,  H01F41/34 ,  H01F10/32

Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.

公开(公告)号：US20180190500A1

公开(公告)日：2018-07-05

申请号：US15740394

申请日：2016-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG ,  Tamotsu MORIMOTO

IPC: H01L21/3065 ,  H01L43/12 ,  H01L43/08 ,  C23F4/00

Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

公开(公告)号：US20170346001A1

公开(公告)日：2017-11-30

申请号：US15605553

申请日：2017-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer, on the underlying film subjected to ashing; and performing plasma etching on the multilayer film by using plasma of a hydrogen-containing gas.

公开(公告)号：US20220115589A1

公开(公告)日：2022-04-14

申请号：US17264213

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12 ,  H01J37/34

Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

公开(公告)号：US20200373480A1

公开(公告)日：2020-11-26

申请号：US16867826

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG

IPC: H01L43/12

Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.

公开(公告)号：US20180301622A1

公开(公告)日：2018-10-18

申请号：US15566384

申请日：2016-05-02

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L43/02 ,  H01F10/32 ,  H01F41/34 ,  H01L27/22 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11B5/8404 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/34 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32963 ,  H01J2237/002 ,  H01J2237/24507 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/26 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.