公开(公告)号：US20190355901A1

公开(公告)日：2019-11-21

申请号：US16526165

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  H01F41/34 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01J37/32 ,  G11C11/16 ,  G11B5/84

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20150083580A1

公开(公告)日：2015-03-26

申请号：US14493904

申请日：2014-09-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akitaka SHIMIZU ,  Tetsuya OHISHI

IPC: C23C14/34

CPC classification number: C23C14/3457 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/32137

Abstract: A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF6, ClF3 and F2 supplied into the processing chamber to; and forming a protective film on the target layer by generating a plasma of a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon supplied into the processing chamber. In the etching, a pressure in the processing chamber is set to a first pressure and a first bias power is applied to a lower electrode. In the forming, the pressure is set to a second pressure lower than the first pressure and a second bias power higher than the first bias power is applied to the lower electrode.

Abstract translation: 一种方法包括：通过产生包含供应到处理室中的至少一个SF6，ClF3和F2的第一气体的等离子体来蚀刻处理室中的目标物体的目标层; 以及通过产生包含供应到处理室中的烃，碳氟化合物和氟代烃中的至少一种的第二气体的等离子体，在目标层上形成保护膜。 在蚀刻中，将处理室中的压力设定为第一压力，向下部电极施加第一偏压功率。 在成形时，将压力设定为低于第一压力的第二压力，并且将高于第一偏压功率的第二偏压功率施加到下电极。

公开(公告)号：US20180301622A1

公开(公告)日：2018-10-18

申请号：US15566384

申请日：2016-05-02

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L43/02 ,  H01F10/32 ,  H01F41/34 ,  H01L27/22 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11B5/8404 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/34 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32963 ,  H01J2237/002 ,  H01J2237/24507 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/26 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20250149300A1

公开(公告)日：2025-05-08

申请号：US19015772

申请日：2025-01-10

Applicant: Tokyo Electron Limited

Inventor： Tangkuei WANG ,  Tetsuya OHISHI ,  Masafumi URAKAWA ,  Shinya MORIKITA

IPC: H01J37/32

Abstract: In a plasma processing apparatus disclosed, a controller performs repetition of a cycle. The cycle includes supplying a pulse of a source high-frequency power from a high-frequency power supply for generating plasma from gas in a chamber, and supplying a pulse of an electric bias to a substrate support from a bias power supply. The pulse of the electric bias includes a direct current voltage pulse periodically generated at a bias frequency of 1 MHz or less. A repetition frequency of the cycle is 5 kHz or more. A start timing of the pulse of the electric bias is simultaneous with or earlier than a stop timing of the pulse of the source high-frequency power. A stop timing of the pulse of the electric bias is later than the stop timing of the pulse of the source high-frequency power.

公开(公告)号：US20190006188A1

公开(公告)日：2019-01-03

申请号：US16021053

申请日：2018-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naotsugu HOSHI ,  Tetsuya OHISHI ,  Shinji HIGASHITSUTSUMI

IPC: H01L21/311 ,  G03F7/42

Abstract: A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.