公开(公告)号：US20180021804A1

公开(公告)日：2018-01-25

申请号：US15549435

申请日：2016-02-04

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASHIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA

IPC: B05D1/00 ,  B05D3/10 ,  H01L21/027 ,  H01L21/67

CPC classification number: B05D1/005 ,  B05C11/08 ,  B05D3/104 ,  G03F7/091 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/027 ,  H01L21/6715 ,  H01L21/67253

Abstract: A coating treatment method of applying a coating solution onto a substrate, includes: a solvent liquid film formation step of forming a first liquid film of a solvent at a middle portion of the substrate and forming a ring-shaped second liquid film having a film thickness larger than a film thickness of the first liquid film of the solvent at an outer peripheral portion of the substrate; a coating solution supply step of supplying the coating solution to a center portion of the substrate while rotating the substrate at a first rotation speed; and a coating solution diffusion step of diffusing the coating solution on the substrate by rotating the substrate at a second rotation speed higher than the first rotation speed while supplying the coating solution.

公开(公告)号：US20180253007A1

公开(公告)日：2018-09-06

申请号：US15760206

申请日：2016-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruhiko KODAMA ,  Masashi ENOMOTO ,  Masahide TADOKORO ,  Takafumi HASHIMOTO

IPC: G03F7/16 ,  G01B11/02 ,  H01L21/66 ,  H01L21/02 ,  H01L21/027 ,  G03F7/11

CPC classification number: G03F7/162 ,  B05C9/14 ,  B05C11/08 ,  G01B11/022 ,  G01B11/06 ,  G01B11/2433 ,  G03F7/11 ,  G03F7/168 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67288 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/681 ,  H01L22/12 ,  H01L22/20

Abstract: A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer