公开(公告)号：US20180294137A1

公开(公告)日：2018-10-11

申请号：US16004898

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/21 ,  H01J37/32

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US09343291B2

公开(公告)日：2016-05-17

申请号：US14274935

申请日：2014-05-12

Applicant: Tokyo Electron Limited

Inventor： Toru Ito ,  Paul C. McIntyre

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/28 ,  H01J37/32 ,  H01L29/51

CPC classification number: H01L21/02172 ,  H01J37/32192 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/28264 ,  H01L29/517

Abstract: Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system. Such a plasma treatment can be executed with substrate temperatures less than 380 degrees Celsius, and even down to about 200 degrees Celsius or below.

Abstract translation: 技术包括在第一半导体材料（例如锗）和高k栅极电介质之间形成界面钝化层的方法。 这样的技术包括使用使用开槽平面天线等离子体处理系统形成的氢基等离子体。 这种等离子体处理可以在基板温度低于380摄氏度，甚至低至约200摄氏度或更低的温度下进行。

公开(公告)号：US20140342575A1

公开(公告)日：2014-11-20

申请号：US14274935

申请日：2014-05-12

Applicant: Tokyo Electron Limited

Inventor： Toru Ito ,  Paul C. Mcintyre

IPC: H01L21/02

CPC classification number: H01L21/02172 ,  H01J37/32192 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/28264 ,  H01L29/517

Abstract: Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system. Such a plasma treatment can be executed with substrate temperatures less than 380 degrees Celsius, and even down to about 200 degrees Celsius or below.

Abstract translation: 技术包括在第一半导体材料（例如锗）和高k栅极电介质之间形成界面钝化层的方法。 这样的技术包括使用使用开槽平面天线等离子体处理系统形成的氢基等离子体。 这种等离子体处理可以在基板温度低于380摄氏度，甚至低至约200摄氏度或更低的温度下进行。

公开(公告)号：US10804072B2

公开(公告)日：2020-10-13

申请号：US16004898

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio Koshimizu ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/32 ,  H01J37/21

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US20160379796A1

公开(公告)日：2016-12-29

申请号：US15258481

申请日：2016-09-07

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/21 ,  H01J37/32

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.