公开(公告)号：US20210407767A1

公开(公告)日：2021-12-30

申请号：US17468839

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Satoshi Tanaka

IPC: H01J37/32 ,  H01J37/16 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01J37/248

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

公开(公告)号：US11145493B2

公开(公告)日：2021-10-12

申请号：US16832227

申请日：2020-03-27

Applicant: Tokyo Electron Limited

Inventor： Satoshi Tanaka

IPC: H01J37/32 ,  H01J37/16 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01J37/248

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

公开(公告)号：US20200312622A1

公开(公告)日：2020-10-01

申请号：US16832227

申请日：2020-03-27

Applicant: Tokyo Electron Limited

Inventor： Satoshi Tanaka

IPC: H01J37/32 ,  H01J37/16 ,  H01J37/248 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3065

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

公开(公告)号：US20180294137A1

公开(公告)日：2018-10-11

申请号：US16004898

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/21 ,  H01J37/32

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US11035741B2

公开(公告)日：2021-06-15

申请号：US16095114

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi Mitsunari ,  Satoshi Tanaka ,  Tsuyoshi Moriya ,  Toshiya Matsuda ,  Masaaki Miyagawa ,  Kenya Iwasaki

IPC: G01K11/32 ,  G01K11/324

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

公开(公告)号：US11993849B2

公开(公告)日：2024-05-28

申请号：US17415104

申请日：2019-12-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru Hori ,  Makoto Sekine ,  Hirotsugu Sugiura ,  Tsuyoshi Moriya ,  Satoshi Tanaka ,  Yoshinori Morisada

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US10804072B2

公开(公告)日：2020-10-13

申请号：US16004898

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio Koshimizu ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/32 ,  H01J37/21

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US20160379796A1

公开(公告)日：2016-12-29

申请号：US15258481

申请日：2016-09-07

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/21 ,  H01J37/32

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US11996271B2

公开(公告)日：2024-05-28

申请号：US17468839

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Satoshi Tanaka

IPC: H01J37/32 ,  H01J37/16 ,  H01J37/248 ,  H01L21/02 ,  H01L21/3065 ,  H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/16 ,  H01J37/248 ,  H01L21/02164 ,  H01L21/3065 ,  H05H1/46 ,  H01J37/32165

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.