公开(公告)号：US09675992B2

公开(公告)日：2017-06-13

申请号：US14570266

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC: B05C11/10 ,  B05C3/02 ,  B05C3/00 ,  C23C18/16

CPC classification number: B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

Abstract: A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

公开(公告)号：US20150165471A1

公开(公告)日：2015-06-18

申请号：US14570266

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC: B05C11/10 ,  B05C3/00 ,  B05C3/02

CPC classification number: B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

Abstract: A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

Abstract translation: 基板处理装置包括：一个或多个基板处理单元11至18，每个基板处理单元用处理流体处理基板3; 将加热的处理流体供给到基板处理单元11至18的处理流体供应单元19和20; 以及控制处理流体供给单元19和20的控制器21.处理流体供应单元19和20包括存储处理流体的储存箱35; 加热热交换器51，加热处理流体; 以及将处理流体供给到基板处理单元11〜18的供给路径52.供给路径52包括在基板处理单元11〜18的上游旁通加热用热交换器51的旁路路径71.加热流体被加热 加热热交换器51和从旁路通路71供给的处理液被混合供给。

公开(公告)号：US12230540B2

公开(公告)日：2025-02-18

申请号：US17050490

申请日：2019-04-16

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Hirotoshi Mori ,  Kazuya Hisano

IPC: H01L21/78 ,  B23K26/00 ,  B23K103/00 ,  H01L21/263 ,  H01L21/304 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: A substrate processing system includes a pre-alignment apparatus having a pre-alignment stage configured to hold a processing target substrate and a detector configured to detect a center position and a crystal orientation of the processing target substrate held by the pre-alignment stage; and a laser processing apparatus having a laser processing stage configured to hold the processing target substrate and a laser processing head configured to radiate and concentrate a laser beam for processing the processing target substrate to the processing target substrate held by the laser processing stage. The pre-alignment apparatus is disposed above the laser processing apparatus.

公开(公告)号：US12191168B2

公开(公告)日：2025-01-07

申请号：US16979191

申请日：2019-03-27

Applicant: Tokyo Electron Limited

Inventor： Hirotoshi Mori ,  Yoshihiro Kawaguchi ,  Hayato Tanoue ,  Kazuya Hisano

IPC: H01L21/67 ,  B23K26/00 ,  B23K26/03 ,  B23K26/046 ,  B23K26/06 ,  B23K26/082 ,  B23K26/53 ,  G01B11/06 ,  H01L21/268 ,  H01L21/78 ,  H01L23/544

Abstract: A laser processing device includes a height measurement unit configured to measure a vertical direction position of an irradiation point of a processing laser beam on an upper surface of a substrate; and a controller configured to control a vertical direction position of a light condensing unit based on the vertical direction position of the irradiation point while moving the irradiation point along multiple dividing target lines. The height measurement unit includes a coaxial laser displacement meter and a separate-axis laser displacement meter. The controller controls the vertical direction position of the light condensing unit by using only one of the coaxial or the separate-axis laser displacement meter for each of the multiple dividing target lines while the substrate is processed and performs a switchover of a laser displacement meter for controlling the vertical direction position of the light condensing unit between the coaxial and the separate-axis laser displacement meters.

公开(公告)号：US12142483B2

公开(公告)日：2024-11-12

申请号：US17295480

申请日：2019-11-11

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Seiji Nakano ,  Munehisa Kodama ,  Hirotoshi Mori ,  Hayato Tanoue ,  Yohei Yamawaki

IPC: H01L21/304 ,  B24B7/22 ,  H01L21/683

Abstract: A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

公开(公告)号：US12087588B2

公开(公告)日：2024-09-10

申请号：US17287558

申请日：2019-09-03

Applicant: Tokyo Electron Limited

Inventor： Hirotoshi Mori ,  Yoshihiro Kawaguchi ,  Kazuya Hisano ,  Hayato Tanoue

IPC: H01L21/304 ,  B23K26/53 ,  H01L21/306 ,  H01L21/67 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/304 ,  B23K26/53 ,  H01L21/30604 ,  H01L21/67092 ,  H01L21/67259 ,  H01L21/681 ,  H01L21/68764

Abstract: A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.