公开(公告)号：US20150221529A1

公开(公告)日：2015-08-06

申请号：US14687071

申请日：2015-04-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Haruhiko FURUYA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: H01L21/67 ,  G05D16/00

CPC classification number: H01L21/67017 ,  C23C16/4482 ,  C23C16/455 ,  C23C16/45557 ,  G05D16/00 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/67115 ,  Y10T137/0324 ,  Y10T137/0396 ,  Y10T137/7722

Abstract: A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas.

Abstract translation: 一种气体供给装置，包括：原料气体供给系统，其通过载气将原料储罐内的原料气体供给到所述处理容器内，所述气体供给装置包括：载气通道，将载气引入原料储存器 罐，连接原料储罐和处理容器的原料气通道，供给载气和原料气; 压力控制气体通道，连接到原料气体通道以供应压力控制气体; 以及阀控制单元，其控制开/关阀，以开始将压力控制气体供应到处理容器中，并同时从原料储罐开始将原料气体供应到处理容器中，并停止供应 的压力控制气体。

公开(公告)号：US20160284613A1

公开(公告)日：2016-09-29

申请号：US15080916

申请日：2016-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki IKEGAWA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: H01L21/66 ,  C23C16/52 ,  H01L21/02 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L22/20 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/67253

Abstract: A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.

Abstract translation: 一种成膜装置，其通过将含有金属的有机材料和氧化气体的原料气体交替地供给到基板上而在基板上形成由金属氧化物形成的薄膜，以将有机材料氧化成多次， 在真空气氛下在反应容器内。 控制部输出用于将由水分检测部检测出的水分浓度与供给氧化气体的步骤开始后的设定值以及开始供给原料气体的步骤之前的设定值进行比较的控制信号，并且当水分浓度超过 用于增加气氛替换步骤的替代操作的设定值。

公开(公告)号：US20150211113A1

公开(公告)日：2015-07-30

申请号：US14603405

申请日：2015-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/448

CPC classification number: C23C16/4402 ,  C23C16/45546 ,  C23C16/45572 ,  C23C16/45578

Abstract: A vertical heat treatment apparatus is configured that a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The vertical heat treatment apparatus includes: a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter and configured to discharge a processing gas; and a flow path forming member provided to surround the gas nozzle in the reaction tube, wherein the flow path forming member defines a fluid flowing space of a temperature adjusting fluid for adjusting a temperature of the processing gas in the gas nozzle and includes a supply hole and an exhaust hole to supply the temperature adjusting fluid.

Abstract translation: 垂直热处理装置被构造成将支撑其上的搁板结构的多个基板的基板支撑件装载在由加热机构包围的垂直反应管中并进行热处理。 垂直热处理装置包括：设置在反应管中的气体喷嘴，其沿着基板支撑件的垂直方向延伸并且构造成排出处理气体; 以及流路形成部件，其设置成围绕所述反应管中的所述气体喷嘴，所述流路形成部件限定用于调节所述气体喷嘴中的处理气体的温度的温度调节流体的流体流动空间，并且包括供给孔 以及用于供应温度调节流体的排气孔。

公开(公告)号：US20140290577A1

公开(公告)日：2014-10-02

申请号：US14227754

申请日：2014-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/52

Abstract: Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line.

Abstract translation: 提供一种控制包括蒸发器，载气供应源和气体供应管线的气体供应装置的方法，所述方法包括：将液体或出售的原料供应到包括在蒸发器中的原料容器; 蒸发原料容器中的液体或出售原料以生产原料气体; 排出具有液体或出售原料的原料容器的内部; 从所述载气供给源供给载气到所述原料容器; 并且将原料气体和载气从原料容器流入经由气体供给管路容纳有待处理基板的处理室。

公开(公告)号：US20130340678A1

公开(公告)日：2013-12-26

申请号：US13925333

申请日：2013-06-24

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Akira SHIMIZU

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C09K3/00 ,  C10L1/328 ,  C23C14/243 ,  C23C14/246 ,  C23C14/26 ,  C23C16/405 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45525 ,  C23C16/52 ,  F16K13/10 ,  F17D1/16 ,  F17D1/17 ,  Y10T137/6416

Abstract: Provided is a gas supply apparatus which includes a raw material gas supply system for supplying a raw material gas into a processing container, a tank to store a liquid raw material, a main heating unit for heating the bottom and sides of the tank, a ceiling heating unit for heating a ceiling portion of the tank, a main temperature measurement unit for measuring a temperature of a region of the main heating unit, a ceiling temperature measurement unit for measuring a temperature of the ceiling heating unit, a liquid phase temperature measurement unit for measuring a temperature of the liquid raw material, a vapor phase temperature measurement unit for measuring a temperature of a vapor phase portion in the upper part of the tank, a level measurement unit for measuring a liquid level of the liquid raw material, and a temperature control unit for controlling the heating units.

Abstract translation: 提供一种气体供给装置，其包括用于将原料气体供给到处理容器中的原料气体供给系统，储存液体原料的罐，用于加热罐的底部和侧面的主加热单元， 用于加热罐顶部的加热单元，用于测量主加热单元的区域的温度的主温度测量单元，用于测量天花板加热单元的温度的上限温度测量单元，液相温度测量单元 用于测量液体原料的温度，用于测量罐上部气相部分的温度的气相温度测量单元，用于测量液体原料的液位的液面测量单元，以及 用于控制加热单元的温度控制单元。

公开(公告)号：US20200040463A1

公开(公告)日：2020-02-06

申请号：US16526088

申请日：2019-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Shigeru NAKAJIMA ,  Katsushige HARADA ,  Yusuke TACHINO

IPC: C23F4/02 ,  C23C8/06 ,  C23C8/80

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US20150259792A1

公开(公告)日：2015-09-17

申请号：US14658355

申请日：2015-03-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/08 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/36

Abstract: A method of forming a titanium carbonitride film is provided. In one embodiment, the method of forming the titanium carbonitride film includes performing a cycle a plurality of times to form a titanium carbonitride film. Each cycle performed a plurality of times includes supplying a raw material gas of titanium into a process chamber in which a process object is accommodated, and simultaneously supplying a first gas containing carbon and hydrogen and a second gas containing nitrogen into the process chamber.

Abstract translation: 提供了形成碳氮化钛膜的方法。 在一个实施方案中，形成碳氮化钛膜的方法包括多次进行循环以形成碳氮化钛膜。 每个循环进行多次，包括将钛的原料气体供应到其中容纳处理对象的处理室中，同时将含有碳和氢的第一气体和含有氮的第二气体供应到处理室中。

公开(公告)号：US20130205611A1

公开(公告)日：2013-08-15

申请号：US13766285

申请日：2013-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Hiromi SHIMA

IPC: F26B19/00

CPC classification number: F26B19/00 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/45525 ,  C23C16/45563 ,  C23C16/45587 ,  Y10T137/2931

Abstract: Provided is a gas supply apparatus having a source gas supply system configured to supply a source gas to a processing container using a carrier gas, wherein the source gas is generated from a liquid raw material consisting of an organic metal material. The gas supply apparatus includes a raw material storage tank configured to store the liquid raw material therein; a gas supply portion installed to the raw material storage tank and connected to a carrier gas passage, wherein the carrier gas passage allows the carrier gas to flow; a gas outflow portion installed to the raw material storage tank and connected to a source gas passage, wherein the source gas passage allows the source gas to flow; and a baffle plate configured to prevent the carrier gas injected from the gas supply portion from being brought into direct contact with a liquid surface of the raw material.

Abstract translation: 提供一种气体供给装置，其具有源气体供给系统，该源气体供给系统构造成使用载气将源气体供给到处理容器，其中源气体由由有机金属材料构成的液体原料产生。 气体供给装置包括：原料容纳槽，其配置为在其中储存液体原料; 气体供给部，其安装在原料储罐上并与载气通道连接，其中载气通道允许载气流动; 气体流出部分安装在原料储罐上并连接到源气体通道，其中源气体通道允许源气体流动; 以及挡板，其构造成防止从气体供给部喷射的载气与原料的液面直接接触。